Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.     

传递系统的伪分解函数和应用

令X为一个紧致度量空间,f:x→X为(拓扑)传递的映射.通过对传递系统(X,f)在fn,n∈N的作用下的伪分解,先引入一个新的拓扑不变量“传递系统的PD函数(伪分解函数)”. 然后,讨论关于此不变量的一些重要性质.最后,把关于周期轨道的Sharkovskii定理推广到传递子系统上.