Construction of self-assembled monolayer terminated with N-heterocyclic carbene-rhodium(I) complex moiety

Functionalization of self-assembled monolayer (SAM) of alkanethiolate with metal containing unit is one of the versatile methods to obtain functional surfaces such as heterogeneous catalysts. However, organic molecules that strongly bind to transition metals at SAM terminal are limited. Recently N-heterocyclic carbenes (NHCs) such as cyclic diaminocarbenes have emerged as strongly σ-donating ligands forming a robust bond with broad spectrum of transition metals. In the present study, for the purpose of establishment of a new robust basement for heterogeneous metal catalysts, a SAM of the alkanethiolate terminated with NHC-rhodium(I) complex moiety was prepared by utilizing a newly designed disulfide molecule bearing NHC-metal complex terminals. X-ray photoelectron spectroscopy (XPS) analysis and angle resolved XPS measurement revealed successful formation of the Rh-complex-terminated SAM on a gold substrate. Infrared reflection absorption spectroscopy (IRRAS) analysis suggested that the linker methylene chains connecting the rhodium complex moiety and the gold surface are in a loosely packed structure. This unique chemical species, NHC, would be a promising candidate as a basement for the construction of functional surface.     

On the hydrogen etching mechanism in plasma nitriding of metals

Iron alloys and aluminum were nitrogen implanted in a controlled oxygen atmosphere and the role of hydrogen on the surface etching mechanisms studied. The surface composition was analyzed by in situ photoemission electron spectroscopy (XPS). In iron alloys, hydrogen strongly etches oxygen, improving nitrogen retention on the surface. On the other hand, hydrogen removes nitrogen from aluminum surfaces, with a deleterious effect on the nitriding effectiveness. The oxygen removal in iron alloys is associated with the catalytic effect of electrons in d-orbitals and the nitrogen removal in aluminum is associated with a steric effect.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.     

Distribution of melamine in polyester–melamine surface coatings cured under nonisothermal conditions

The influence of experimental cure parameters on the diffusion of reactive species in polyester–melamine thermoset coatings during curing has been investigated with X‐ray photoelectron spectroscopy and attenuated total reflectance Fourier transform infrared. The diffusion of melamine plays a vital role in the curing process and, therefore, in the ultimate properties of coatings. At a low (<20%) hexamethoxymethylmelamine (HMMM) crosslinker concentration, the matrix composition is uniform, but at high HMMM concentrations, excess HMMM rapidly segregates to the air–coating interface. The rate of migration is governed by the difference in the surface free energies of polyester and HMMM and the concentration gradient of HMMM between the bulk and the surface. An increased rate of energy absorption also increases the rate of migration of HMMM to the surface. A physical model has been proposed to explain this surface segregation phenomenon in terms of cocondensation and self‐condensation reactions. It suggests that an appropriate amount of melamine can be segregated on the surface and allowed to self‐condense to form a desired thickness of a melamine topcoat through the control of the binder composition and cure conditions. This technique can be implemented to apply a melamine topcoat during cure. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 83–91, 2004     

X-ray photoelectron spectroscopy characterization of composite TiO2–poly(vinylidenefluoride) films synthesised for applications in pesticide photocatalytic degradation

X-ray photoelectron spectroscopy (XPS) was adopted for the analytical characterization of composite titanium dioxide–poly(vinylidenefluoride) (TiO₂–PVDF) films developed for applications in the photocatalytic degradation of pollutants.

The composites were deposited on glass substrates by casting or spin coating from TiO₂–PVDF suspensions in dimethylformamide (DMF). XPS data on the TiO₂–PVDF surface composition were used to optimize preparation conditions (composition of the TiO₂/PVDF suspension, deposition technique) in terms of titanium dioxide surface amount and film stability.

The use of spin-coating deposition and the increase of TiO₂ amount in the DMF suspensions were found to improve the titanium surface content, although high TiO₂/PVDF ratios led to film instability. PVDF–TiO₂ films were also used in preliminary photocatalytic degradation tests on isoproturon, a phenylurea herbicide, under solar UV irradiation; the results were compared to direct photolysis to evaluate the catalytic efficiency of immobilized TiO₂ and the role played by the PVDF film during the degradation process.     

Sulfur Concentration in Nanoporous Alumina Membrane

Nanoporous alumina membrane prepared by anodic oxidation using sulfuric acid electrolyte was subjected to TG-DTA and X-ray Photoelectron Spectroscopy (XPS or ESCA) to further study the distribution of sulfur. In XPS study, Ar⁺ ion bombardment was performed on the sample to etch the surface at a rate of 3 nm min^-1. As a result, sulfur was found to be concentrated within a depth of 3nm from the surface. The S content of the surface was found to be 2.7±0.5 wt%, and that at a depth of ca. 3 nm and ca. 10 nm was found to be as low as about 0.6±0.11 wt% (5.37±1.0 wt%→ 1.26±0.2wt% SO₂). In TG-DTA, the mass loss of 7.3% was in fair agreement with that calculated on XPS results (7.1±1.2%). This revised version was published online in July 2006 with corrections to the Cover Date.     

A comparative XPS and UPS study of VOx layers on mineral TiO2(001)‐anatase supports

Four vanadium oxide layers on mineral TiO₂(001)‐anatase supports with different thickness (3–33 Å) were prepared with reactive d.c. magnetron sputtering and were extensively studied with photoelectron spectroscopy. Al Kα radiation and 150 eV synchrotron radiation were used as excitation sources. The evolution of the 2p, 3s and 3p core level line shapes of V and Ti as a function of the vanadium oxide thickness was studied, as well as the O1s and O2s core lines and the valence band. All the V2p spectra of the deposited vanadium oxide layers consist of at least 60% V⁵⁺, the rest being V⁴⁺. The V3p region is complicated by multiplet splitting, which prevents the determination of the vanadium oxidation state. The V3p multiplet splitting is different for the two excitation energies. No reduction of the titania support surface due to the vanadium oxide deposition was observed. Copyright © 2006 John Wiley & Sons, Ltd.     

Dependence of calculated electron effective attenuation lengths on transport mean free paths obtained from two atomic potentials

We report changes in electron effective attenuation lengths (EALs) resulting from use of transport mean free paths (TMFPs) obtained from the Dirac–Hartree–Fock (DHF) potential instead of the Thomas–Fermi–Dirac (TFD) potential in an algorithm used in the National Institute of Standards and Technology (NIST) Electron Effective‐Attenuation‐Length Database (SRD 82). TMFPs from the former potential are believed to be more reliable than those obtained from the latter potential. We investigated changes in the EALs for selected photoelectron and Auger‐electron lines in four elemental solids (Si, Cu, Ag, and W), for Si 2p photoelectrons of varying energy in SiO₂, and for photoelectrons excited by Al Kα X rays in four candidate gate‐dielectric materials (HfO₂, ZrO₂, HfSiO₄, and ZrSiO₄). For each material, we computed the change in the average EAL for a range of overlayer‐film thicknesses from zero to a maximum value corresponding to attenuation of the substrate signal to 10% of its original value. This EAL change was a maximum for electrons emitted normally from the surface and decreased monotonically with increasing emission angle. The maximum EAL change varied between ?4.4% and 2.6% for the three groups of materials. We found that the maximum EAL change correlated mainly with the TMFP change. We found that TMFP changes in other solids could generally lead to maximum EAL changes between ?2.6% and 1.9% for electron energies between 500 and 2000 eV. For lower energies, the maximum EAL changes could be larger for some solids. Our revised EALs for Si 2p photoelectrons in SiO₂ excited by Mg and Al Kα X rays agree within 0.5% with values reported by Seah and Spencer from a detailed analysis of SiO₂ film‐thickness measurements by XPS and other techniques. Copyright © 2006 John Wiley & Sons, Ltd.     

XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS³) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.The elaborated structures were characterised by I-V analysis. The saturation current I_S, the ideality factor n, the barrier height Φ_Bn and the serial resistance R_S are determined.The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS³ technique), the value of the interface state density N_SS(E) close to the mid-gap was estimated to be in the range of 2-4 × 10¹¹ eV⁻¹ cm⁻², indicating a good electronic quality of the obtained interfaces.Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed.     

Sr1-xLaxTiO3的高温高压合成及XPS研究

 利用高温高压方法合成了有稀土元素La掺杂的钙钛矿氧化物Sr_1-xLa_xTiO₃。XRD测试表明，在x≤0.5时，样品基本为单相，呈立方相；晶胞体积随x的增加而增加，在x=0.4时开始减小。XPS测量发现，样品中存在Ti离子的变价。讨论了Ti离子价态的变化对晶格参数的影响。