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《数学的实践与认识》2019,(20)
研究了具有粗糙壁面的平行板微管道内三阶流体的电磁驱动流.假设两个壁面粗糙度的形状是相位差为0或π的小振幅正弦波形状.将洛伦兹力作为体积力,利用摄动法解析求出了速度和流率的近似解.通过数值计算,结果表明随着波数或非牛顿参数的增加,壁面粗糙度对三阶流体的阻力增加.随着Hartmann数的增加,壁面粗糙度对三阶流体的阻力减小.相位差为0的壁面粗糙度对流动的阻力大于相位差为π的粗糙度对流动的阻力.当波数或Hartmann数充分大时,壁面粗糙度的相位差变得不太重要. 相似文献
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本文用实验方法,观察和研究了声除灰现象,初步归纳出除灰效果和声压级以及除灰时间的关系。初步找到除灰的声压级阈值。文中使用了旋笛式声了除灰器,声功率1950W,气声效率18%;哨式声除灰器,声功率680W,气声效率6.8%。本文列举辽阳石化厂加热炉,装上声除灰器后,热效率提高4.8%;广州石化厂新锅炉,装声除灰器,排烟温度比设计值低2-4℃。 相似文献
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Yu-Qiong Li Hua-Qing Wang Wu-Yu Wang Zhi-Nong Yu He-Shan Liu Gang Jin 《Acta Mechanica Sinica》2012,28(5):1382-1388
Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping. 相似文献
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信标光强度影响下的Hartmann波前探测 总被引:1,自引:0,他引:1
报道了Hartmann波前探测与信标光强度关系的实验研究。给出了在信标光强度变化时的波前探测相对误差以及波前探测误差对自适应光学系统闭环控制的影响。 相似文献
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陈子栋 《原子与分子物理学报》2005,22(3):483-487
本文求解了在球坐标下Hartmann势的Schrdinger方程,得到了能量方程和归一化的波函数.用Laplace变换使径向的二阶微分方程退化为一阶微分方程,直接积分后用级数展开,应用Laplace逆变换得出本征函数.讨论了径向本征函数的像函数的递推关系,从而得出径向波函数的递推关系. 相似文献
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For MHD flows in a rectangular duct with unsymmetrical walls, two analytical solutions have been obtained by solving the governing equations in the liquid and in the walls coupled with the boundary conditions at fluid-wall interface. One solution of 'Case I' is for MHD flows in a duct with side walls insulated and unsymmetrical Hartmann walls of arbitrary conductivity, and another one of 'Case II' is for the flows with unsymmetrical side walls of arbitrary conductivity and Hartmann walls perfectly conductive.The walls are unsymmetrical with either the conductivity or the thickness different from each other. The solutions, which include three parts, well reveal the wall effects on MHD. The first part represents the contribution from insulated walls, the second part represents the contribution from the conductivity of the walls and the third part represents the contribution from the unsymmetrical walls. The solution is reduced to the Hunt's analytical solutions when the walls are symmetrical and thin enough. With wall thickness runs from 0 to∞, there exist many solutions for a fixed conductance ratio. The unsymmetrical walls have great effects on velocity distribution. Unsymmetrical jets may form with a stronger one near the low conductive wall, which may introduce stronger MHD instability. The pressure gradient distributions as a function of Hartmann number are given, in which the wall effects on the distributions are well illustrated. 相似文献