应用级联倍频方法提高倍频系统输出稳定性研究

提出应用级联倍频方法提高倍频系统输出稳定性,并就该方法的有效性进行了理论分析和模拟计算.分析和计算结果不但证明级联倍频方法能实现倍频系统稳定输出,而且还表明可以通过仔细调节第一块倍频晶体中波矢方向 k 与光轴间夹角、两块倍频晶体间的间隔,能调节改变实现倍频系统最稳输出时所需第二块晶体的理论计算长度,使之与第二块倍频晶体的实际加工长度一致,最终实现系统稳定倍频输出.级联倍频方法在实现高输出稳定性的同时能实现高的倍频转换效率,对应用于光参量啁啾脉冲放大系统的高稳定抽运源系统的设计建造具有重要参考意义. 关键词： 级联倍频 稳定倍频输出 光参量啁啾脉冲放大     

高功率全固态绿光激光技术研究进展

 报道了高功率全固态腔内和腔外倍频两种绿光激光器研究进展。腔内倍频绿光激光器采用L型腔双棒串接结构,在重复频率10 kHz时,用三硼酸锂晶体倍频获得绿光功率186 W,光-光效率达15.8%。腔外倍频绿光激光器采用主振荡和功率放大器,在重复频率400 Hz时,获得基频激光单脉冲能量1.2 J,采用Ⅱ类相位匹配KTP晶体腔外倍频,获得525 mJ的绿光输出,倍频效率为43.7%。采用偏振合成技术获得了单脉冲能量大于1 J的绿光输出。在该激光放大器实验装置上,进行了双模块热效应补偿技术和受激布里渊散射相位共轭技术实验研究,改善了激光光束质量。     

Mathematical and physical modelling of the dynamic fluidic impedance of arteries using electrical impedance equivalents

In this work, a detailed mathematical and physical model for calculating the fluidic impedance of an artery is developed. Initially, the model calculates the impedance of a healthy artery, and then, it compares this with the alteration in the impedance of an artery with atherosclerosis. Copyright © 2013 John Wiley & Sons, Ltd.     

仪表放大器中电阻变化率与噪声的关系

探讨电阻变化率对由3个运算放大器组成的仪表放大器输出端噪声的影响.把运算放大器噪声模型和电阻噪声模型代入仪表放大器电路,得到输出端噪声与电阻的关系式,通过列表分析,按不同的电阻比筛选出对输出端噪声影响显著的电阻.orCAD软件的仿真结果验证了分析是正确的.     

Simultaneous Compensation of Dispersion and Losses using Er-Doped Double-Core Optical Fiber

The Er-doped double-core dispersion compensating fiber (EDDCF) has been fabricated using modified chemical vapor deposition (MCVD) technique. We have obtained 14 dB gain at 1550 nm (using a diode laser of 980 nm wavelength which provides 100 mW of pump power) with dispersion of about −165 ps/km nm. It is useful for the optical fiber network where amplification as well as negative dispersion is necessary. We are the first to report the experimental realization and characterization of the EDDCF.     

Design of Broadband L-band Erbium Doped Fiber Amplifier

An 80 nm bandwidth long wavelength erbium-doped fiber amplifier using a seed light injection method is designed.It is shown that when the wavelength of the seed beam varies from 1520 nm to 1570 nm,the gain at 1610 nm increases and reaches maximum near 1553 nm and then decreases.The gain increases with the seed light power.With the seed light ,the long wavelength Erbium-doped fiber amplifier has 80 nm bandwidth (1570～1650 nm),30 dB gain and noise figure less than 5.0 dB.     

基于NOLF双稳效应对经DSF压缩后的超短光脉冲进行消基座

基于非线性FP腔（NOLF）双稳效应，提出一种利用掺铒光纤放大器（EDFA）及NOLF对经DSF压缩后的超短光脉冲进行消基座的方案.利用耦合模方程，分析了NOLF的消基座特性.结果表明，通过合理选择NOLF的反射率、入射脉冲的中心频率与NOLF的共振频率的失谐量及EDFA的增益，可使脉冲的基座能量比减小一半. 关键词： 超短光脉冲 消基座 非线性FP腔 光学双稳 掺铒光纤放大器     

Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance

One of the key differences of a semiconductor optical amplifier (SOA) with internal lasing oscillation (ILO) from a SOA with external light injection (ELI) lies in a carrier-sharing mechanism. Since the internal lasing mode shares the same pool of carriers with the signals, the carriers (or photons) withdrawn from the circulating laser mode speed up the gain recovery. On the other hand, the external light injected into the SOA shortens the carrier recovery time through optical pumping without any carrier sharing involved. To find out a better scheme, we have made a comparative investigation on the effects of the ILO and ELI on the SOA performance. It turns out by way of simulation that the ELI scheme provides faster gain recovery, shorter carrier lifetime, and higher saturation power when the external injection power is higher than the internal lasing power. The performance enhancement is not so pronounced with the carrier-sharing mechanism, as the internal lasing mode itself gives rise to severe longitudinal spatial hole burning (LSHB). Nevertheless, the ILO scheme is preferable for linear-amplification applications. We also examine the use of the ELI for low-crosstalk optical amplifiers. It is found that the ELI scheme does not bring in a very strong resonance peak in the crosstalk, which appears in a SOA with ILO due to relaxation oscillations of the lasing mode. In comparison to the ILO in SOAs, the ELI into SOAs is likely to leave more optical gain for multi-channel amplification without any sacrifice on the crosstalk.     

Accurate Small-Signal Model Extraction for pHEMT on GaAs

An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient.