Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds

A systematic study has been performed of the dry etching characteristics of GaAs, Al_0.3Ga_0.7As, and GaSb in chlorine-based electron cyclotron resonance (ECR) discharges. The gas mixtures investigated were CCl₂F₂/O₂, CHCl₂F/O₂, and PCl₃. The etching rates of all three materials increase rapidly with applied RF power, while the addition of the microwave power at moderate levels (150 W) increases the etch rates by 20–80%. In the microwave discharges, the etch rates decrease with increasing pressure, but at 1 m Torr it is possible to obtain usable rates for self-bias voltages 100 V. Of the Freon-based mixtures, CHCl₂F provides the least degradation of optical (photoluminescence) and electrical (diode ideality factors and Schottky barrier heights) properties of GaAs as a result of dry etching. Smooth surface morphologies are obtained on all three materials provided the microwave power is limited to 200 W. Above this power, there is surface roughening evident with all of the gas mixtures investigated.     

芳香共聚酯B-N多种向列织构的形态研究

从一种聚芳酯B-N得到了丝状(包括细丝和粗丝)、纹影状和大理石纹状等与小分子向列液晶相似的多种织构。由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜技术揭示其向错和取向矢图。电镜和光学显微镜的结果相互补充,表明了细丝和粗丝状织构的分子取向矢分布很不相同,是两种不同的织构,而粗化始于第二熔融降温。在这些向列织构中分别发现了S=±(1/2)和s=+1的向错的例子和平面内微区转向壁的证据。     

催化湿式氧化中铜基催化剂的流失与控制

 制备了催化湿式氧化处理有机废水用铜基催化剂，并用XRD，XRF和TG－DTG等手段对催化剂进行了表征，对催化剂及其前驱体的组成和结构进行了分析鉴定．结果表明，由类水滑石结构的前驱体焙烧得到的催化剂Cu－Al－Zn－O，其活性组分铜的流失得到了控制；在氧化降解苯酚、十二烷基苯磺酸钠和磺基水杨酸时，在初始氧分压0．5MPa和160～220℃的反应条件下，催化剂活性组分铜的流失量小于0．3mg／L．对催化剂活性组分不易流失的原因进行了理论解释和计算．     

Dry etching of InGaP and AlInP in CH4/H2/Ar

Electron cyclotron resonance (ECR) plasma etching with additional rf-biasing produces etch rates 2,500 A/min for InGaP and AlInP in CH₄/H₂/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N₂ addition to CH₄/H₂/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AlInP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to 200 Å from the sur face relative to the RIE samples.     

湿式氧化工艺中颗粒Ru催化剂的活性和稳定性

分别采用传统成型法和新的成型法制备了一系列以CeO2为主要成分的载体,将贵金属Ru浸渍在这些载体上制备了不同的催化剂.对催化剂的比表面积和机械强度进行了表征,并通过湿式氧化乙酸的静态实验和湿式氧化苯酚的动态实验分别考察了催化剂的活性和稳定性.结果表明,Ru负载在采用新方法成型的载体上制得的催化剂具有更大的比表面积.向CeO2中掺杂Zr能增大载体的比表面积.新方法制备的催化剂Ru/ZrO2-CeO2催化湿式氧化乙酸具有良好的活性,化学需氧量(COD)去除率为98%.在110h的催化湿式氧化苯酚反应中,苯酚和COD的去除率维持在96%左右,反应过程中活性组分的溶出浓度很小,催化剂表面有少量的积炭,但积炭在300℃能够被完全氧化.因而催化剂具有较好的稳定性和工业应用可能性.     

Use of CF3,Br/Al,discharges for reactive ion etching of III-V semiconductors

The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF₃Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm^–2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF₃Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min^–1 at 0.56 W · cm^–2, to 1550 Å · min at 1.3 W · cm^–2. The in-based materials show linear increases in etch rates only for power densities above – 1.0 W · cm^–2. These etch rates are comparable to those obtained with CCI₂F₂:O₂ mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of >0.8 W cm^–2, due to the introduction of deep level trapping centers. At 1.3 W· cm^–2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl₂F₂-based mixtures. High-power etching with CF₃Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.     

Large-area microwave and radiofrequency plasma etching of polymers

We have investigated O₂/CF₄ plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF₄ concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure     

MgO、Al_2O_3、SiO_2催化剂上湿天然气中乙烷氧化脱氢的研究(英文)

研究了ＭｇＯ、Ａｌ２Ｏ３、ＳｉＯ２催化剂对湿天然气中乙烷氧化脱氢反应的影响，发现ＭｇＯ对乙烷脱氢有较好的活性，７００Ｃ时，Ｃ２Ｈ４选择性达４１．８５％，收率达１８．７５％。考察了催化剂酸碱性对反应的影响，适当碱性的催化剂有利于反应的进行，催化剂活性顺序与碱性大小顺序相一致为ＭｇＯ＞Ａｌ２Ｏ３＞ＳｉＯ２。催化剂活性顺序与其晶格氧流动性有顺应关系。     

Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma

The present work deals with a pulsed microwave discharge in an Ar/CF ₄ gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF _x (x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.     

Mass spectrometer-wall probe diagnostic of Ar discharges containing SF6 and/or O2: Reactive ions in etching plasmas

Positive and negative ions of Ar/SF₆ and Ar/SF₆/O₂ plasmas (etching plasmas) and of Ar/O₂ plasmas (cleaning plasmas) in Pyrex tubes have been investigated using a mass spectrometer-wall probe diagnostic technique. The measurement of negative ions proved to be a very sensitive method for the detection of wall material. In etching plasmas with small admixtures of SF₆, oxygen was found as the only representative of wall material. At larger amounts of SF₆, silicon could be detected. In cleaning plasmas with small admixtures of O₂ applied to a previously etched Pyrex surface, fluorine was found, indicating the reversal of fluoridation by oxygenation.