电场调控Pt/Co∶ZnO/Nb∶SrTiO3异质结阻变与磁性研究

利用脉冲激光沉积法在0.7; Nb∶ SrTiO3衬底上制备了Co∶ ZnO薄膜,并构建了Pt/Co∶ ZnO/Nb∶ SrTiO3异质结器件.该器件表现出典型的双极性阻变效应,在正、负向电压作用下,器件电阻可以在低阻态和高阻态之间变换,电阻变换比值可达到104,阻态具有一定的保持性与耐久性,同时Co∶ ZnO薄膜的饱和磁化强度会产生与阻变相关联的可逆调控.结合ZnO薄膜阻变与磁性调控结果发现,氧空位在Co∶ ZnO/Nb∶ SrTiO3异质结的阻变及磁性调控中具有重要作用,并采用氧空位产生与湮灭结合载流子注入-束缚/解束缚模型解释阻变与磁性调控.     

不同温度下碲铟汞晶体结构的XRD研究

通过X射线粉末衍射方法对大气环境下25～100℃条件下的碲铟隶晶体结构进行了研究.借助Rietveld方法,利用GSAS软件对碲铟汞晶体结构进行精修,并计算了其Hg空位浓度.结果表明,室温下碲铟汞晶体中由于Hg元素较易挥发而引入的Hg空位约占1.88;,品格常数约为0.63163 nm;随着温度的升高,Hg的占位率逐渐降低,Hg空位的浓度有所提高;MIT的品格常数呈现出先减小后增大的趋势.     

钛表面二氧化钛膜中氧空位点缺陷传输性能的电化学研究

"钛/TiO2氧化膜/溶液"界面电极体系的电化学性能主要决定于钛表面的TiO2氧化物膜.本文利用多种电化学技术,结合半导体物理的Mott-Schottky分析和Einstein方程,研究了金属钛在1.0mol·L-1HClO4溶液中表面半导体TiO2氧化膜的生长及氧化膜中氧空位点缺陷在外加电场作用下的传输性能,并根据离子性电荷传输与电子性电荷传输对电场变化响应时间之不同特点,确定氧化膜中点缺陷扩散系数.结果表明,电极电位或阳极析氧反应对稳态电流(iss)、氧化膜的阳极化常数(α)、膜中电场强度()、以及膜中氧空位点缺陷的扩散系数(D0)等重要物理化学参数,均有显著影响,并依据氧化膜中的结构变化进行分析.     

氧空位和磷掺杂协同增强铁钴基材料电解水催化性能

为了研发高效、稳定的电解水催化剂,我们以氧空位和磷掺杂为基础,通过原位浸泡生长和两步热处理的方法,在泡沫铁上合成具有氧空位和磷掺杂的纳米花结构作为析氢反应(HER)和析氧反应(OER)双功能电催化剂。CoFe₂O₄已被报道为一种很有前途的OER和氧还原反应(ORR)电催化剂,然而CoFe₂O₄在HER中表现出电导率差、电催化反应慢的特性。CoFe₂O₄中氧空位(Ov)的形成可以有效调控催化剂表面的电子结构,有助于产生更多的缺陷和空位,从而提高OER的活性。随后,引入磷原子填充在空位中,制备的P-Ov-CoFe₂O₄/IF在碱性电催化测试中展现出优异的HER和OER性能,在10 mA·cm^-2电流密度下HER和OER过电位仅为54和191 mV,Tafel斜率分别为57和54 mV·dec^-1,并具有良好的循环稳定性。     

钙钛矿结构类型的功能材料的结构单元和结构演变

阐述了钙钛矿类型结构的本质特征是Ａ位阳离子与氧负离子共同组成基本密维层,Ａ位阳离子价态变化在产生氧空位和Ｂ位阳离子混合价态中起决定性作用。提出了十四种氧缺乏的钙钛矿结构单元,可以组合成各种氧化物功能材料的结构演变规律。从结构分析和的角度为制备功能材料提供了新思路。     

Role of intrinsic defects and impurities in forming the optical characteristics of ZnWO4 and CdWO4 crystals

We analyze the optical characteristics of crystals within the framework of a model representation that presupposes the entry of the background impurity of iron ions in two valence states, Fe³⁺ and Fe²⁺, into regular lattice nodes. The spectral manifestation of intrinsic defects of vacancy-type structure depending on the conditions of crystal growth and heat treatment is comprehensively investigated. With allowance for the specific features of the technology applied, we have tested the technique suggested in scientific periodicals for bleaching ZnWO₄ and CdWO₄ crystals by doping with nonisovalent ions, in particular, with Sb and Ag impurities. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 211–216, March–April, 2000. The work was carried out with support from INTAS-UKRAINE within the framework of the project INTAS-UA-95-0166.     

KCdF3:Cr3+晶体EPR零场分裂参量与电荷补偿效应的研究

按照叠加模型与EPR零场分裂参量的三阶微扰理论,建立了KCdF₃:Cr³⁺晶体EPR零场分裂参量与四角对称Cr³⁺-Cd²⁺缺陷中心局域结构之间的定量关系.证实Cd²⁺空位与晶格畸变的存在,我们获得:围绕Cr³⁺离子的六个F^-配体分别向中心Cr³⁺移动Δ₁=0.00294nm,Δ₂=0.0010nm,Δ₃=0.0028nm (参见图2).EPR零场分裂参量与实验一致表明:Cd²⁺空位与晶格畸变的假设是合理的.尽管四角晶场主要来自Cd²⁺空位,但晶格畸变的贡献不可忽略.     

Oxygen vacancy effect on dielectric and hysteretic properties of zigzag ferroelectric iron dioxide nanoribbon

Zigzag FeO₂ nanoribbon defected by the removal of oxygen atoms is simulated using Monte Carlo simulations. All possible arrangements of positions and number of oxygen vacancy are investigated. Temperature dependence of polarization, dielectric susceptibility, internal energy, specific heat and dielectric hysteresis loops are all studied. Results show the presence of second order phase transition and $Q-$ type behavior. Dielectric properties dependence on ribbon's edge, positions and number of oxygen vacancy are discussed in detail. Moreover, single and square hysteresis loops are observed whatever the number of oxygen vacancy in the system.     

Intrinsic luminescence centers in γ- and θ-alumina nanoparticles

In this study, we investigate the photoluminescence(PL) properties of γ and θ-alumina nanoparticles synthesized by the chemical wet method followed by annealing. The obtained experimental results indicate the presence of some favorable near ultraviolet(NUV)-orange luminescent centers for usage in various luminescence applications, such as oxygen vacancies(F, F~+_2, F~(2+)_2, and F_2centers), OH related defects, cation interstitial centers, and some new luminescence bands attributed to trapped-hole centers or donor–acceptor centers. The energy states of each defect are discussed in detail. The defects mentioned could alter the electronic structure by producing some energy states in the band gap that result in the optical absorption in the middle ultraviolet(MUV) region. Spectra show that photoionazation of F and F_2 centers plays a crucial role in providing either free electrons for the conduction band, or the photoconversions of aggregated oxygen vacancies into each other, or mobile electrons for electrons-holes recombination process by the Shockley–Read–Hall(SRH)mechanism.