Large-area microwave and radiofrequency plasma etching of polymers

We have investigated O₂/CF₄ plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF₄ concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure     

Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma

The present work deals with a pulsed microwave discharge in an Ar/CF ₄ gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF _x (x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.     

Mass spectrometer-wall probe diagnostic of Ar discharges containing SF6 and/or O2: Reactive ions in etching plasmas

Positive and negative ions of Ar/SF₆ and Ar/SF₆/O₂ plasmas (etching plasmas) and of Ar/O₂ plasmas (cleaning plasmas) in Pyrex tubes have been investigated using a mass spectrometer-wall probe diagnostic technique. The measurement of negative ions proved to be a very sensitive method for the detection of wall material. In etching plasmas with small admixtures of SF₆, oxygen was found as the only representative of wall material. At larger amounts of SF₆, silicon could be detected. In cleaning plasmas with small admixtures of O₂ applied to a previously etched Pyrex surface, fluorine was found, indicating the reversal of fluoridation by oxygenation.     

Important unanswered questions—1970

This paper was given as the opening address at the 1970 Albany International Conference on Radiation Effects in Semiconductors, and it attempts to establish a general overview of the field by concentrating on recent research developments and important unanswered questions. The continuing importance of impurity-defect interactions, of microscopic defect identification, and of the necessity for more theoretical calculations are emphasized. The rapid development of the field of ion implantation and its close relationship with radiation effects studies are pointed out. It is predicted that research in compound semiconductors will increase rapidly with close beneficial interaction with ion implantation studies.     

Viscosity dependence of electrochemical etching for gold tip fabrication

We suggest an electrochemical etching method with viscous etchant to enhance the sharpness of tip of scanning probe microscope. The viscosity of the etchant mixed with HCl solution and glycerol was used as a control parameter in addition to the voltage applied to the tip. In order to improve the sharpness of the tip, a nano-scale meniscus formed between the end of the tip and the liquid level was used. The shapes, aspect ratios, and radii of tips were measured depending on the concentration of the etchant. It was found that the tip etched with the mixed liquid with glycerol was sharper than the tip with the pure HCl solution. This can be explained by the fact that the meniscus formed by viscous liquid is maintained with a thinner diameter and causes final etching until the meniscus bridge is ruptured.     

Etched ZIF-8 as a Filler in Mixed-Matrix Membranes for Enhanced CO2/N2 Separation

Zeolite ZIF-8 has been etched with acid to form microporous ZIF-8-E crystals. These were then introduced into a polyethersulfone (PES) membrane matrix to enhance its CO₂/N₂ separation performance. Open through pores of size about 100 nm formed in the ZIF-8 crystals allow the ingrowth of polyethersulfone chains, ensuring a reduction in the number of nonselective voids, thereby achieving better interaction between ZIF-8-E and PES. As a result, the CO₂/N₂ separation performance of the ZIF-8-E/PES membrane increased significantly, showing a CO₂ permeability of 15.7 Barrer and a CO₂/N₂ ideal selectivity of 6.5.     

Study of indoor radon and thoron progeny levels in surrounding areas of Nalbari, Assam, India

With the growing understanding of the role of radon and its daughter products as major sources of radiation exposure, the importance of large number of estimation of radon concentration in various parts of the country is realized. Inhalation of radon, thoron and their decay products is the major source of the total radioactive dose received by the human population from natural radiation. The indoor radon and thoron progeny levels in Nalbari area of Assam are studied by using the LR-115 (type II) Solid State Nuclear Track Detector in Plastic Twin Chamber dosimeter. Radon and thoron progeny levels in different types of dwellings for one full calendar year are presented in this paper. For Assam Type (A.T.) houses, indoor radon progeny concentrations vary from 0.17 to 0.64 mWL with an annual geometric mean of 0.27 mWL and that for Reinforced Cement Concrete (R.C.C.) houses vary from 0.22 mWL to 0.60 mWL with the annual geometric mean of 0.37 mWL. The thoron progeny levels in A.T. houses also vary from 0.01 to of 0.05 mWL with an annual geometric mean of 0.02 mWL and that for R.C.C. houses vary from 0.02 to 0.08 mWL with the annual geometric mean of 0.04 mWL.      

Diamond kinoform hard X‐ray refractive lenses: design,nanofabrication and testing

Motivated by the anticipated advantageous performance of diamond kinoform refractive lenses for synchrotron X‐ray radiation studies, this report focuses on progress in designing, nanofabricating and testing of their focusing performance. The method involves using lift‐off and plasma etching to reproduce a planar definition of numerically determined kinoform refractive optics. Tests of the focusing action of a diamond kinoform refractive lens at the APS 8‐ID‐I beamline demonstrate angular control of the focal spot.     

Patterning Flexible Substrates Using Surface Relief Structures in Azobenzene Functionalized Polymer Films

A novel method for maskless micro-patterning of polymeric substrates is presented. First, an azobenzene functionalized polymer film is spin-coated on a Poly (ethylene terephthalate) (PET) sheet. Then surface relief structures are optically inscribed on the polymer film by interference of laser beams. The patterned azobenzene functionalized film is then etched in the plasma chamber such that the gratings are transferred to the PET substrate. Finally, any remaining azobenzene functionalized polymer is dissolved away using an appropriate solvent. This method of patterning can be broadly applied to a variety of flexible/polymeric substrates and the resolution is not limited by the substrate thermo-mechanical properties.