具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

Multipliers of convergence in norm of series with respect to multiplicative systems

We prove analogs of the Telyakovskii-Pochuev criteria for multipliers of uniform convergence and of convergence in the integral metric for multiplicative systems with bounded generating sequence.     

Algebraic Dirichlet-to-Neumann mapping for linear elasticity problems with extreme contrasts in the coefficients

The convergence of iterative based domain decomposition methods is linked with the absorbing boundary conditions defined on the interface between the sub-domains. For linear elasticity problems, the optimal absorbing boundary conditions are associated with non-local Dirichlet-to-Neumann maps. Most of the methods to approximate these non-local maps are based on a continuous analysis. In this paper, an original algebraic technique based on the computation of local Dirichlet-to-Neumann maps is investigated. Numerical experiments are presented for linear elasticity problems with extreme contrasts in the coefficients.     

Differential geometry of tensor product immersions

In this article we obtain the best possible estimates of the type number of tensor product immersions and investigate tensor product immersions with lowest possible type. Several classification theorems in this respect are then proved.     

Surface properties of finite classical Coulomb systems: Debye-Hückel approximation and computer simulations

We report analytical and numerical studies of surface correlations in finite, homogeneously polarizable, classical Coulomb systems placed in an insulating or conducting environment. Their purpose is to understand the phenomenological, shape-dependent laws of electrostatics, from the point of view of statistical mechanics; we focus on the knowledge of the dielectric susceptibility of the system, a quantity proportional to the equilibrium fluctuation of the system's instantaneous polarization per unit volume. This goal has been achieved for a system in a conducting state. The picture is that the shape-dependent part of the susceptibilities results from the action of unbounded observables (the second moments of the instantaneous polarization of the system) on long-range surface correlations and that the relations of electrostatics are verified by means of shape-dependent thermodynamic limits. This picture is supported (i) by exact solutions and asymptotic analysis of the Debye-Hückel approximation of multicomponent plasmas in disks and spheres with insulating and conducting environment and also in ellipses in a vacuum, and (ii) by computer simulations of a one-component plasma in a disk with different environments, notably a conducting environment with permeable and impermeable wall. These observations have revealed for the first time the reason why the susceptibility of a conducting disk in a conductor with impermeable walls diverges linearly with the radius of the disk: this is due to the occurrence of long-range radial correlations in the conductor. These findings are quantitatively interpreted in terms of a novel canonical Debye-Huckel approximation as contrasted to the ordinary grand canonical version. Lastly a fresh look at the problem of the surface correlations of a conductor in a vacuum, which places the observer close to the surface of the conductor but in the vacuum, is presented and applied to the disk, the ellipse, the cylinder, the sphere, and the wedge.     

Ar—Kr溶液扩散系数的分子动力学模拟及其与温度的关系

用分子动力学模拟方法研究确定Ａｒ－Ｋｒ溶液的自扩散系数Ｄ１、Ｄ２和互扩散系数Ｄ１２以及它们随温度变化的规律。结果表明，分别用Ｇｒｅｅｎ－Ｋｕｂｏ法和Ｅｉｎｓｔｅｉｎ法得到的扩散系数在数值上一致；该溶液的３种扩散系数均满足Ｄ＝Ｄ０ｅ＾Ｅ／ＲＴ关系。     

CaTiO3纳米粉体溶胶-凝胶法合成、表征及介电特性

采用无机盐溶胶-凝胶法制备了CaTiO₃纳米粉体，采用TG-DTA、XRD、TEM等技术进行了表征，并探讨了CaTiO₃纳米粉体烧结特性及介电效应。结果表明，干凝胶800 ℃低温煅烧可获得粒径分布较窄、平均粒径为60～70 nm的单相CaTiO₃纳米粉。纳米CaTiO₃粉具有较大的比表面积，使作为粉体烧结驱动力的表面能剧增，促使CaTiO₃在1 200 ℃实现致密烧结，比固相法制备的微米粉烧结降低100～200 ℃，且具有较宽的烧结温区。与微米级粉体烧结体介电特性相比，纳米粉具有更高的Q_f值。纳米CaTiO₃粉制备的陶瓷在1 250 ℃烧结2 h，获得优良的介电性能：ε_r=172，Q_f=4 239 GHz，τ_f=+7.68 × 10^-4 ℃^-1。     

SYNTHESIS OF LIQUID CRYSTALLINE POLYACRYLATES WITH THIOESTER AS BRIDGE-BOND

A new series of acrylates with the same mesogens containing thioester as bridge-bondwere synthesized, and the acrylates were characterized by H~1 NMR, IR and MS. Thepolymers were obtained by radical polymerization using AIBN as initiator. The monomersand polymers exhibit thermotropic-enantiotropic liquid crystalline behavior.     

新铌酸盐Ba5NdTi3Nb7O30的合成与介电性能

The New Niobate Ba₅NdTi₃Nb₇O₃₀ was synthesized by solid state reaction at 1250℃ for 48h. The crystal structure and dielectric properties of Ba₅NdTi₃Nb₇O₃₀ were determined by X-ray powder diffraction and dielectric measurements. The results show that Ba₅NdTi₃Nb₇O₃₀ belongs to ferroelectric phase of tetragonal tungsten bronze structure at room temperature with unit cell parameters: a=1.24424(4)nm, c=0.39476(2)nm, calculated density 5.719g·cm^-3. Ba₅NdTi₃Nb₇O₃₀ belongs to relaxor ferroelectrics. The phase transition temperature (T_c) of Ba₅NdTi₃Nb₇O₃₀ from ferroelectric to paraelectric is found to shift toward higher temperature side at higher fre-quency, and T_c is 90℃ at 1kHz. At room temperature, the dielectric constant (ε_r) and dielectric loss of Ba₅NdTi₃Nb₇O₃₀ decrease with the increase of frequency, and Ba₅NdTi₃Nb₇O₃₀ ceramic have high dielectric constant 489 at 1kHz.     

pH,Definition and measurement at high temperatures

In this review paper, the NBS scale and its limitations are briefly discussed. The magnitude of liquid junction potentials and some calculated values are presented. The use of a molality scale for hydrogen electrode concentration cells at high temperatures is described, and results from measurements on ionization equilibria are summarized. Use of this scale is also recommended for certain circumstances with cells without liquid junction. As an alternative activity scale, use of the Pitzer ion-interaction treatment for ions is recommended for special cases. Finally, reference data are presented for _±HCl in HCl(aq) to 350°C and (HCl+NaCl)(aq) to 200°C that were derived by use of the Pitzer ion-interaction treatment.Presented at the Second International Symposium on Chemistry in High Temperature Water, Provo, UT, August 1991.