纳米半导体中多重激子效应研究进展

多重激子效应是指纳米半导体吸收一个高能光子后产生两个甚至多个电子-空穴对的物理过程,不仅具有重要的基础研究意义,而且在新型太阳电池及高性能光电子器件领域具有潜在应用价值.综述了多重激子效应的发展历程;总结了纳米半导体的材料组分、体系结构甚至表面质量对多重激子效应的影响;介绍了多重激子效应的实验测试分析方法以及解释多重激子效应的理论方法;概括了目前多重激子效应在器件中的应用并对其应用前景进行展望.     

Indirect strong coupling regime between a quantum emitter and a cavity mediated by a mechanical resonator

Achieving strong coupling between light and matter is usually a challenge in Cavity Quantum Electrodynamics (cQED), especially in solid state systems. For this reason is useful taking advantage of alternative approaches to reach this regime, and then, generate reliable quantum polaritons. In this work we study a system composed of a quantized single mode of a mechanical resonator interacting linearly with both a single mode cavity and a quantum two-level system. In particular, we focus on the behavior of the indirect light-matter interaction when the phonon mode interfaces both parts. By diagonalization of the Hamiltonian and computing the density matrix in a master equation approach, we evidence several features of strong coupling between photons and matter excitations. For large energy detuning between the cavity and the mechanical resonator it is obtained a phonon-dispersive effective Hamiltonian which is able to retrieve much of the physics of the conventional Jaynes–Cummings model (JCM). In order to characterize this mediated coupling, we make a quantitative comparison between both models and analyze light-matter entanglement and purity of the system leading to similar results in cQED.     

应变纤锌矿ZnO/Mg_xZn_(1-x)O柱形量子点中离子受主束缚激子的光学性质

在有效质量近似下,考虑内建电场效应,采用变分法详细研究了受限于纤锌矿Mg_xZn_(1-x)O/ZnO/Mg_xZn_(1-x)O圆柱形应变量子点中离子受主束缚激子(A~-,X)的带间光跃迁吸收系数随量子点尺寸、Mg含量和离子受主杂质中心位置的变化情况,并和离子施主束缚激子(D~+,X)及自由激子进行了比较.结果表明:随着量子点尺寸的减小,(A~-,X)的光跃迁吸收强度增强,吸收曲线向高能方向移动,出现蓝移现象.随着Mg含量增加,(A~-,X)的光跃迁吸收曲线蓝移,且吸收强度减弱.随着离子受主杂质从量子点的左界面沿材料生长方向移至量子点的右界面,光跃迁吸收曲线向低能方向移动,出现红移现象.此外,与离子施主束缚激子(D~+,X)相比,随着沿材料生长方向掺入杂质位置的变化,光跃迁吸收曲线移动的方向相反.但不管是掺入离子受主杂质还是离子施主杂质,当离子杂质从量子点的左异质界面沿材料生长方向移至右异质界面时,光跃迁吸收峰的移动量大致相同.     

激基复合物给体作间隔层对激子复合区域的调节

为研究激基复合物器件激子复合区域的变化,在TPD/BPhen界面可形成激基复合物发光的基础上,以Ir(pq)2(acac)为探测层,制备器件ITO/Mo O_3(2.5 nm)/TPD((40-x)nm)/Ir(pq)2(acac)(0.5 nm)/TPD(x,x=0,3,6,10 nm)/BPhen(40 nm)/Cs2CO_3/Al,其中靠近BPhen的TPD称之为间隔层。电致发光光谱表明,该组器件的激子复合区域主要位于Ir(pq)2(acac)薄层和TPD/BPhen界面,分别发射595 nm和478 nm的光。随着TPD间隔层厚度的增加和电压的升高,发光区域向激基复合物区域(TPD/BPhen界面)移动,即更多的电子和空穴在TPD/BPhen界面形成激基复合物发光,Ir(pq)2(acac)发光减弱。当间隔层厚度由0 nm增至10nm时,6 V电压下的Ir(pq)2(acac)和激基复合物发光强度的比值由44降至1.5。对于间隔层厚度为6 nm的器件,Ir(pq)2(acac)和激基复合物发光强度的比值由6 V时的2.8降至10 V时的1.0。由此可见,激基复合物给体作间隔层能有效调节激子复合区域。     

Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

Binding energies of excitons in GaAs films on Al_xGa_1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on Al_xGa_1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.     

叶黄素聚集体吸收光谱的实验分析与理论模拟

分子聚集体表现出单分子所不具备的特有功能,利用吸收光谱对聚集体分子结构特性的研究是理解其电子和能量转移功能的基础。实验中利用紫外-可见分光光度计,检测了叶黄素在乙醇溶液中的单体吸收谱和在1∶1乙醇水溶液中的聚集体吸收谱。并通过对叶黄素单体吸收谱的高斯分解,获得了激发态的振动能级结构参数。理论上采用时间相关函数描述的吸收谱线和Frenkel激子模型,通过模拟单分子吸收光谱,获得了叶黄素分子的激发能、特征模振动频率、Huang-Phys因子等参数。再利用这些参数进行了聚集体分子光谱的模拟,分析了叶黄素聚集体的分子结构影响光谱变化的原因。结果表明,(1) 分子间的相互作用是决定吸收光谱峰位移动的主要原因,实验中叶黄素H-聚集体的吸收光谱较单体蓝移了77 nm,模拟显示相互作用在2 000 cm-1附近;(2) 聚集体分子个数越多,聚集协作效应越大,吸收光谱半高宽变小,同时吸收峰进一步蓝移;(3) 环境的无序度对吸收光谱的半高宽也存在较大的影响,无序度越大,吸收光谱半高宽越大。实验结果为进一步研究聚集体在生物系统和材料系统中的功能提供了理论依据。     

Magnetic polaron-related optical properties in Ni(Ⅱ)-doped Cd S nanobelts: Implication for spin nanophotonic devices

Emissions by magnetic polarons and spin-coupled d-d transitions in diluted magnetic semiconductors(DMSs)have become a popular research field due to their unusual optical behaviors.In this work,high-quality NiI₂(Ⅱ)-doped CdS nanobelts are synthesized via chemical vapor deposition(CVD),and then characterized by scanning electron microscopy(SEM),x-ray diffraction,x-ray photoelectron spectroscopy(XPS),and Raman scattering.At low temperatures,the photoluminescence(PL)spectra of the Ni-doped nanobelts demonstrate three peaks near the band edge:the free exciton(FX)peak,the exciton magnetic polaron(EMP)peak out of ferromagnetically coupled spins coupled with FXs,and a small higher-energy peak from the interaction of antiferromagnetic coupled Ni pairs and FXs,called antiferromagnetic magnetic polarons(AMPs).With a higher Ni doping concentration,in addition to the d-d transitions of single Ni ions at 620 nm and 760 nm,two other PL peaks appear at 530 nm and 685 nm,attributed to another EMP emission and the d-d transitions of the antiferromagnetic coupled Ni²⁺-Ni²⁺pair,respectively.Furthermore,single-mode lasing at the first EMP is excited by a femtosecond laser pulse,proving a coherent bosonic lasing of the EMP condensate out of complicated states.These results show that the coupled spins play an important role in forming magnetic polaron and implementing related optical responses.     

Photoswitchable exciton coupling in merocyanine-diarylethene multi-chromophore hydrogen-bonded complexes

Light on: Photocontrol of J-type exciton interactions by using chromophores is reported. Hydrogen-bonded merocyanine dyes could be switched reversibly through photoinduced ring-closure/ring-opening reactions of diarylethene receptors. Addition of H-aggregation-inducing bismelamine receptors enabled the partial interconversion between J- and H-type exciton coupling.     

Study of Squeezed Excitons in Polar Semiconductors

Some properties of excitons in polar semiconductors are studied theoretically by means of squeezed state variational approach. This method makes it possible to consider bilinear terms of the phonon operators as well as linear terms arising from the Lee-Low-Pines (LLP)-like transformation. The exciton ground state energy andbinding energy are calculated numerically. It is shown that the squeezing effect is significant in the case of strong exciton-phonon coupling region.     

Binding Energy of an Exciton Bound to Ionized Acceptor in Quantum Dots

Binding energiesfor an exciton (X) trapped in the two-dimensional quantum dot by a negative ion located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics.This configuration is called a barrier (A^-,X) center.The dependence of the binding energy of the ground state of the barrier (A^-,X)center on the electron-to-hole mass ratio for a few values of the distance d between the fixed negative ion on the z axis and the dot plane is obtained.We find that when d → 0,the barrier (A^-,X) center has not any bound state.We also studied the stability and binding energy of the ground state of the barrier (A^-,X) center in a parabolic quantum dot as a function of the distance d between the fixed negative ion on the z axis and the dot plane.