Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatings

Silicon carbide and silicon oxycarbide films were prepared from solutions of polycarbosilane and methyldimethoxysilane + tetraethoxysilane, respectively, and deposited on different substrates (Si wafers, stainless steel plates, sapphire and SiC fibers). The coatings were heated at different temperatures and in different atmospheres, such as regular grade argon, ultra high purity and argon vacuum. The films were characterized using different techniques (FT-IR, XRD, SIMS, Ellipsometry).The influence of the processing parameters (heat treatment temperature and atmosphere) on the final microstructure of the coatings is discussed in this article.     

Solid State NMR and TG/MS Study on the Transformation of Methyl Groups During Pyrolysis of Preceramic Precursors to SiOC Glasses

The sol-gel method was used to prepare two different starting gels containing SiCH₃-groups for the preparation of SiOC ceramics. To understand the role of Si—H bonds in the incorporation of carbon into the SiOC network, gels prepared from a 1:2 mixture of triethoxysilane and methyldiethoxysilane (T^HD^H2) and solely methyltriethoxysilane (T^Me) were investigated. Thermogravimetric analysis coupled with mass spectroscopy (TG-MS) in inert atmosphere was performed to attain an insight into the decomposition reactions involved during gel-glass transformation. Samples calcined at different temperatures up to 1000°C were characterized by ²⁹Si and ¹³C magic angle spinning nuclear magnetic resonance (MAS-NMR) spectroscopy. The presence of SiH groups in the starting gel allows an efficient conversion of Si—CH₃ groups into CSi₄ sites at lower temperatures. As a result, despite a much lower amount of carbon in the starting T^HD^H2 gel (C/Si = 0.33) compared to the T^Me gel (C/Si = 1), the amount of carbon inserted into the SiOC network of both glasses is equivalent, but the T^Me sample contains the 10 fold amount of free carbon.     

阳极氧化与超临界干燥结合制备多孔硅

多孔硅（PS）在室温下发射强可见光，这一发现在国际上引起极大关注，成为材料科学、半导体物理和化学以及信息科学领域研究的热点［1，2］．最近三、四年，国内外对PS制备工艺、影响PS发光的因素、PS发光机制、PS应用前景等方面进行了广泛的研究［2］，但有一些基本问题仍待解决，如关于PS发光机制尚存在分歧；PS电致发光效率低，离应用差距甚远；高多孔度PS微孔结构不稳定等．PS微孔内溶剂蒸发过程中，由于毛细管张力的存在，造成微孔骨架受力不匀．强的应力使PS骨架脆弱，甚至微孔结构坍缩，从而导致PS结构不稳定．对于高多孔度…     

Electrostatic Interactions Leading to Hierarchical Interpenetrating Electroconductive Networks in Silicon Anodes for Fast Lithium Storage

Recently, the frequency of combining MXene, which has unique properties such as metal-level conductivity and large specific surface area, with silicon to achieve excellent electrochemical performance has increased considerably. There is no doubt that the introduction of MXene can improve the conductivity of silicon and the cycling stability of electrodes after elaborate structure design. However, most exhaustive contacts can only improve the electrode conductivity on the plane. Herein, a MXene@Si/CNTs (HIEN-MSC) composite with hierarchical interpenetrating electroconductive networks has been synthesized by electrostatic self-assembly. In this process, the CNTs are first combined with silicon nanoparticles and then assembled with MXene nanosheets. Inserting CNTs into silicon nanoparticles can not only reduce the latter‘s agglomeration, but also immobilizes them on the three-dimensional conductive framework composed of CNTs and MXene nanosheets. Therefore, the HIEN-MSC electrode shows superior rate performance (high reversible capacity of 280 mA h⁻¹ even tested at 10 A g⁻¹), cycling stability (stable reversible capacity of 547 mA h g⁻¹ after 200 cycles at 1 A g⁻¹) and applicability (a high reversible capacity of 101 mA h g⁻¹ after 50 cycles when assembled with NCM622 into a full cell). These results may provide new insights for other electrodes with excellent rate performance and long-cycle stability.     

Efficient production of nanoporous silicon carbide from rice husk at relatively low temperature

Nanoporous silicon carbide with a specific surface area of up to 186.45 m² g⁻¹ has been efficiently synthesized from waste rice husk using a magnesiothermic reduction at 950 °C as a key step. Throughout the entire process, the recovery rates of silicon, potassium and phosphorus from rice husk can reach 88.46, 91.5 and 65.5%, respectively. Turning rice husk waste into a real treasure, this promising method for producing porous SiC protects the environment and brings economic benefits.