Maximum principles for a class of nonlinear second order elliptic differential equations

In this paper we investigate maximum principles for functionals defined on solutions to special partial diff'erential equations of elliptic type, extending results by Payne and Philippin. We apply such maximum principles to investigate one overdetermined problem.     

Stable structure and effects of sulfur in CdTe/CdS heterojunctions

Structural and electronic properties of S in the CdTe/CdS(0001) interface are studied using the density functional theory. The interstitial S atom may induce the inversion of the surface Cd atoms and sublayer Te atoms of the Cd‐terminated surface, while S atoms may adsorb at the top sites, substitute Te atoms or accumulate at the voids inside the Te‐terminated (111) CdTe surface. Isovalent substituting S for Te in the CdTe(111)/CdS(0001) heterojunctions can reduce the strain arising from lattice mismatch and cause a reduction of interface states, so it may be better for solar cells. Copyright © 2011 John Wiley & Sons, Ltd.     

First‐Principles Investigation of Anisotropic Electron and Hole Mobility in Heterocyclic Oligomer Crystals

Based on quantum chemistry calculations combined with the Marcus–Hush electron transfer theory, we investigated the charge‐transport properties of oligothiophenes (nTs) and oligopyrroles (nPs) (n=6, 7, 8) as potential p‐ or n‐type organic semiconductor materials. The results of our calculations indicate that 1) the nPs show intrinsic hole mobilities as high as or even higher than those of nTs, and 2) the vertical ionization potentials (VIPs) of the nPs are about 0.6–0.7 eV smaller than the corresponding VIPs of the nTs. Based on their charge‐transport ability and hole‐injection efficiency, the nPs have potential as p‐type organic semiconducting materials. Furthermore, it was also found that the maximum values of the electron‐transfer mobility for the nTs are larger by one‐to‐two orders of magnitude than the corresponding maximum values of hole‐transfer mobility, which suggests that the nTs have the potential to be developed as promising n‐type organic semiconducting materials owing to their electron mobility.     

基于第一性原理的无铅无机钙钛矿Cs3Bi2X9(X=Cl、Br、I)光电性能表面效应研究

用基于第一性原理的密度泛函理论方法,对Cs₃Bi₂X₉(X=Cl、Br、I)的光电特性进行理论计算,并系统阐述这3种晶体的表面效应对光电性能的影响。结果表明,3种材料的光学特性由铋原子和卤素原子最外层p轨道上的价电子主导。在可见光区中,材料的吸收峰会随卤素原子序数的增加呈现红移,其中一维结构的Cs₃Bi₂Cl₉表面结构在光吸收能力上尤为特别且敏感;二维结构的Cs₃Bi₂Br₉光吸收能力会受厚度影响;零维结构的Cs₃Bi₂I₉非常稳定,且几乎不受表面特性和晶体厚度的影响。     

H2S splitting on Cu(110): Insight from combined periodic density functional theory calculations and microkinetic simulation

Practical copper (Cu)‐based catalysts for the water–gas shift (WGS) reaction was long believed to expose a large proportion of Cu(110) planes. In this work, as an important first step toward addressing sulfur poisoning of these catalysts, the detailed mechanism for the splitting of hydrogen sulfide (H₂S) on the open Cu(110) facet has been investigated in the framework of periodic, self‐consistent density functional theory (DFT‐GGA). The microkinetic model based on the first‐principles calculations has also been developed to quantitatively evaluate the two considered decomposition routes for yielding surface atomic sulfur (S*): (1) H₂S → H₂S* → SH* → S* and (2) 2H₂S → 2H₂S* → 2SH* → S* + H₂S* → S* + H₂S. The first pathway proceeding through unimolecular SH* dissociation was identified to be feasible, whereas the second pathway involving bimolecular SH* disproportionation made no contribution to S* formation. The molecular adsorption of H₂S is the slowest elementary step of its full decomposition, being related with the large entropy term of the gas‐phase reactant under realistic reaction conditions. A comparison of thermodynamic and kinetic reactivity between the substrate and the close‐packed Cu(111) surface further shows that a loosely packed facet can promote the S* formation from H₂S on Cu, thus revealing that the reaction process is structure sensitive. The present DFT and microkinetic modeling results provide a reasonably complete picture for the chemistry of H₂S on the Cu(110) surface, which is a necessary basis for the design of new sulfur‐tolerant WGS catalysts. © 2013 Wiley Periodicals, Inc.