激光致盲干扰效果评估方法研究

研究了激光致盲干扰设备对光电制导系统、光电成像系统和激光测距机干扰效果的评估方法,分别提出了相应的干扰效果评估准则。对于光电制导系统,可以根据实施激光致盲干扰后制导武器的脱靶量是否超出正常制导精度的三倍或杀伤半径判定干扰是否有效,并根据干扰成功率的大小划分干扰等级。对观瞄用光电成像系统的干扰效果,可以按照致盲激光对成像功能的损伤、破坏程度划分为四个等级;对跟踪用光电成像系统的干扰效果可以根据实施干扰后成像系统能否输出有效跟踪脱靶量,以及脱靶量是否超出正常跟踪精度的三倍判定干扰是否有效。对激光测距机的干扰效果可以依据致盲激光对测距机测距精度、测距能力的影响程度划分为四个等级。     

Mn掺杂LiNbO3结构ZnTiO3的磁性和光电性质的第一性原理研究

采用密度泛函理论计算了Mn掺杂LiNbO₃结构的ZnTiO₃(LN-ZnTiO₃)的磁性和光电性质。计算结果表明Mn掺杂LN-ZnTiO₃倾向占据Zn位,形成稳定的3d⁵电子构型。Mn替代Zn位掺杂可以为LN-ZnTiO₃提供较大的局域磁矩,约为5 μB。同时在价带顶附近形成明显的Mn-3d和O-2p轨道的受主能级,降低了材料的带隙,促进可见光的吸收。在LN-ZnTiO₃中掺杂Mn可以同时实现较大的局域磁矩和p型半导体的特性,拓展了材料在磁学和可见光吸收领域的应用。     

Doped Graphene Quantum Dots Modified Zn0.9Cd0.1Se for Improved Photoelectric Properties

S-graphene quantum dots (GQDs), N-GQDs, P-GQDs, and Cl-GQDs are prepared by a solution chemistry method and further incorporated with Zn_xCd_1−xSe by one-step hydrothermal method. In the previous study, Zn_xCd_1−xSe reached the optimal photoelectric performances at the Zn/Cd ratio of 0.9:0.1, so the Zn_0.9Cd_0.1Se were combined with doped GQDs (D-GQDs) to form Zn_0.9Cd_0.1Se/doped-GQDs. The influence of GQDs doped with different elements on the photoelectric properties of Zn_0.9Cd_0.1Se composites is discussed. Compared with pristine Zn_0.9Cd_0.1Se, Zn_0.9Cd_0.1Se/Cl-GQDs, and Zn_0.9Cd_0.1Se/P-GQDs can improve the photocurrent response and current intensity, therein, Zn_0.9Cd_0.1Se/Cl-GQDs reaches the lowest interfacial charge transfer resistance and the highest photocurrent response of 5.48 × 10⁻⁶ A cm⁻². Mott–Schottky analysis shows that the fitting slope of Zn_0.9Cd_0.1Se/Cl-GQDs composites is significantly lower than that of Zn_0.9Cd_0.1Se/GQDs with other doped elements. The results indicate that Zn_0.9Cd_0.1Se/Cl-GQDs composites has the largest carrier density, which is beneficial to charge conduction.