Partial wave analysis of J/ψ→pp(-)π~0 and measurement of J/ψ→pp(-)η, pp(-)η'

Based on 58 million J/ψ data collected with the BES Ⅱ detector at the BEPC, Partial Wave Analysis(PWA) is performed on J/ψ→pp(-)π~0. The new excited baryon N(2065) is confirmed. Clear signals for other N~* states are observed and the corresponding masses, widths and spin-parity are also measured. Processes such as J/ψ→pp(-)η,pp(-)η' are also studied and the branching ratios are measured.     

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Ultrathin silicon dioxide (SiO₂) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO₂/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO₃), and SiO₂ thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.      

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations.      

N粒子量子态的隐形传送的理论分析

在量子态的隐形传送中,如果要对一个任意N粒子态实现隐形传送,发送者Alice 和接受者Bob 之间须建立一个非局域的2N个纠缠粒子作为量子通道,发送者对需传送的N粒子量子态与属于自己的纠缠对中的粒子分别进行N次Bell基测量,则将有2~(2N)个塌陷态,即有2~(2N)个变换算符,本文推导出变换算符的计算公式,并给出这2~(2N)个变换算符之间的关系,从而使接受者对自己拥有的粒子进行相应的变换大为简便,进一步由变换算符性质分析量子隐形传送的必要条件及成功几率.     

Understanding the stereo‐ and regioselectivities of the polar Diels–Alder reactions between 2‐acetyl‐1,4‐benzoquinone and methyl substituted 1,3‐butadienes: a DFT study

The polar Diels–Alder (DA) reactions of 2‐acetyl‐1,4‐benzoquinone (acBQ) with methyl substituted 1,3‐butadienes have been studied using DFT methods at the B3LYP/6‐31G(d) level of theory. These reactions are characterized by a nucleophilic attack of the unsubstituted ends of the 1,3‐dienes to the β conjugated position of the acBQ followed by ring‐closure. The reactions present a total regioselectivity and large endo selectivity. The analysis based on the global electrophilicity of the reagents at the ground state, and the natural bond orbital (NBO) population analysis at the transition states correctly explain the polar nature of these cycloadditions. The large electrophilic character of acBQ is responsible for the acceleration observed in these polar DA reactions. Copyright © 2008 John Wiley & Sons, Ltd.     

Optical properties of citrate-stabilized CdS nanoparticles

Citrate-stabilized CdS nanoparticles of size 4 nm are obtained by varying the sulfide:citrate ion concentration in a simple aqueous synthesis method. The optical absorption and photoluminescence properties of the nanoparticles are studied. The size of the crystallites is found to be less affected by sulfide:citrate ratio. At lower concentrations of S²⁻, trap state emission is favoured and at higher concentrations excitonic transition is predominant as shown by optical absorption and photoluminescence spectra. Effective surface capping and optimum concentration of S²⁻ leads to the quenching of surface-defect-related emission. Increase in citrate ion concentration is found to increase the intensity of photoluminescence band arising from trap state emission revealing the role of sulfide:citrate ratio on surface modification of CdS nanocrystals. The nanoparticles are hexagonal as shown by the X-ray diffraction and selected area electron diffraction pattern.     

Superfluidity and Anderson localisation for a weakly interacting Bose gas in a quasiperiodic potential

Using exact diagonalisation and Density Matrix Renormalisation group (DMRG) approach we analyse the transition to a localised state of a weakly interacting quasi-1D Bose gas subjected to a quasiperiodic potential. The analysis is performed by calculating the superfluid fraction, density profile, momentum distribution and visibility for different periodicities of the second lattice and in the presence (or not) of a weak repulsive interaction. It is shown that the transition is sharper towards the maximally incommensurate ratio between the two lattice periodicities, and shifted to higher values of the second lattice strength by weak repulsive interactions. We also relate our results to recent experiments.     

Topics in the theory of amorphous materials

In this Colloquium, I describe some current frontiers in the physics of semiconducting amorphous materials and glasses, including a short, but self-contained discussion of techniques for creating computer models, among them the quench from the melt method, the Activation-Relaxation Technique, the decorate and relax method, and the experimentally constrained molecular relaxation scheme. A representative study of an interesting and important glass (amorphous GeSe₃:Ag) is provided. This material is a fast-ion conductor and a serious candidate to replace current FLASH memory. Next, I discuss the effects of topological disorder on electronic states. By computing the decay of the density matrix in real space, and also computing well-localized Wannier functions, we close with a quantitative discussion of Kohn’s Principle of Nearsightedness in amorphous silicon.     

Two-step laser excitation of the highly excited even-parity states of atomic mercury

We report term energies and quantum defects of highly excited even-parity states of mercury in the 83 876–84 140 cm^-1 energy range, employing a two-step laser excitation scheme via the S₀↦6s6p³P₁ inter-combination transition. Two dye lasers, pumped by a common Nd:YAG laser, were frequency doubled by BBO crystals and used to record the spectra in conjunction with a thermionic diode ion detector. Our new observations include the much extended D₂ (22 ≤n ≤52) series and a few members of the S₁ (24 ≤n ≤30) Rydberg series. Members of the D₂ Rydberg series with such a high n value are reported for the first time. The relative intensities of the D₂ and S₁ transitions (m = 4, 5 and 6) of group II-B elements excited from the P₁ inter-combination states are also discussed.     

Electronic states of neutral and ionized tetrahydrofuran studied by VUV spectroscopy and ab initio calculations

The electronic spectroscopy of isolated tetrahydrofuran (THF) in the gas phase has been investigated using high-resolution photoabsorption spectroscopy in the 5.8–10.6 eV with absolute cross-section measurements derived. In addition, an electron energy loss spectrum was recorded at 100 eV and 10° over the 5–11.4 eV range. The He(I) photoelectron spectrum was also collected to quantify ionisation energies in the 9–16.1 eV spectral region. These experiments are supported by the first high-level ab initio calculations performed on the excited states of the neutral molecule and on the ground state of the positive ion. The excellent agreement between the theoretical results and the measurements allows us to solve several discrepancies concerning the electronic state spectroscopy of THF. The present work reconsiders the question of the lowest energy conformers of the molecule and its population distribution at room temperature. Electronic supplementary material  Supplementary Online Material