Coded nanoscale self-assembly

We demonstrate coded self-assembly in nanostructures using the code seeded at the component level through computer simulations. Defects or cavities occur in all natural assembly processes including crystallization and our simulations capture this essential aspect under surface minimization constraints for self-assembly. Our bottom-up approach to nanostructures would provide a new dimension towards nanofabrication and better understanding of defects and crystallization process.      

Hillock formation on ion-irradiated graphite surfaces

Abstract

Scanning probe microscopy experiments show that ion irradiation of (0001) graphite results in the formation of isolated defects comprising of a few tens of atoms. We use molecular dynamics simulations and density-functional theory calculations to study the formation probabilities of these defects. We identify different defect structures which correspond to experimentally observed hillocks on graphite surfaces. We find that the predominant source of defects are vacancies and interlayer interstitials, and identify a three-atom carbon ring defect on the graphite surface.     

Electronic modifications and surface reactivity of an ion bombarded graphite surface

The first steps of structural and electronic modifications of a graphite surface bombarded with argon, hydrogen and deuterium ions were investigated using high resolution electron energy loss spectroscopy (HREELS). The energy and the damping of the low energy plasmon mode of graphite (E//C mode) were studied with respect to the bombardment settings. We show that argon bombardment affects the energy of the plasmon mode, while no similar change is observed after hydrogen (deuterium) bombardments. This can be related to the variation of inter-planar distance between two graphene layers. Moreover, the damping of the plasmon mode can be correlated with the interstitial defect concentration. Concerning the reactivity of the bombarded surfaces, we demonstrate that deuterium bombardment produce a non-deuterated surface. This last is very reactive to a further atomic deuterium exposure, as it is shown by the formation of C-D bondings. The deuterated sites can be removed after thermal annealings between 473 and 783 K. The occurrence of a chemical erosion mechanism accompanying this deuteration is discussed.     

O1s and Mn2p NEXAFS on single-layered La1-xSr1+xMnO4: crystal field effect versus orbital coupling mechanism

O1s and Mn2p near-edge X-ray absorption spectroscopy on La_1-xSr_1+xMnO₄ (0 ≤x ≤0.5) single crystals shows that Sr doping does not only provide holes to the system but also induces a continuous transfer of electrons from out-of-plane d_3z2-r2 to in-plane d_3x2-r2/d_3y2-r2 orbitals. Furthermore, a non-vanishing electron occupation of in-plane d_x2-y2 and out-of-plane d_3z2-r2 orbitals is observed up to relatively high doping contents. These findings demonstrate that the energy difference between all these orbital types has to be very small and manifest that the orbital degree of freedom is determined not just by crystal field effects but also by orbital coupling. Moreover, the doping-dependent transfer of spectral weight observed in the current data identifies La_1-xSr_1+xMnO₄ as a charge-transfer insulator.     

相变及空位缺陷对高压下GeO_2光学性质的影响

本文采用第一性原理方法,在100 GPa的压力范围内,计算了GeO_2理想晶体和含锗、氧空位点缺陷晶体的光学性质.吸收谱数据表明,压力诱导的三个结构相变对GeO_2晶体的吸收谱均有影响:第一个相变将导致其吸收边蓝移,而第二和第三相变将使得其吸收边红移.锗和氧空位点缺陷的存在将导致GeO_2的吸收边红移,但氧空位点缺陷引起的红移更明显.尽管如此,分析发现,在100 GPa的压力范围内,压力、相变以及空位点缺陷等因素都不会导致GeO_2晶体在可见光区出现光吸收现象(是透明的).波长在532 nm处的折射率数据显示,在GeO_2的四个相区,其折射率均随压力增加而降低;而且,GeO_2的三个结构相变以及锗、氧空位点缺陷都会导致其折射率有所增大.本文预测,GeO_2有成为冲击光学窗口材料的可能.     

剪切形变下掺杂及缺陷对MoS2电子结构的影响

本文利用密度泛函理论,研究剪切形变下掺杂改性及不同类型缺陷对MoS2电子结构的影响。发现：剪切形变下,MoS2+P体系为相对最稳定的结构,掺杂改性相较于缺陷对模型稳定性影响更小;模型MoS2+P+Se中P-Mo键易形成共价键,而其中的Se-Mo键和MoS2+P-Mo-S模型中的P-Mo键,易形成离子键;掺杂使MoS2模型能隙变大,而缺陷使能隙减小,且S和Mo原子共缺陷的模型带隙为0;缺陷相较于掺杂改性模型,更能使Mo原子周围增加电荷聚集度,带隙值更低,更能影响或调控模型的电子结构。     

Progress in fluorene-based wide-bandgap steric semiconductors

Molecular bulks are favorable for the thermal and morphological stability in organic wide-bandgap semiconducting polymers with potential applications in both information and energy electronics. In this review, we present our progress in the design of fluorene-based bulky semiconductors with a fractal four-element pattern. Firstly, we established one-pot methods to spirofluorenes, especially spiro[fluorene-9,9′-xanthene](SFX) serving as the next-generation spiro-based semiconductors. Secondly, we observed the supramolecular forces at the bulky groups and discovered the supramolecular steric hindrance(SSH) effect on polymorphisms, nanocrystals as well as device performance. Thus, a synergistically molecular attractor-repulsor theory(SMART) was proposed for the control of nanocrystal morphology, thin film phase and morphology. Thirdly, the third possible type of defects has been identified to generate green band(g-band) emission in widebandgap semiconductors by the introduction of molecular strain design of cyclofluorene. Finally, the first bulky polydiarylfluorene with highly crystalline and β conformation was achieved by an attractor-repulsor design of tadpole-shape monomer, which offered an effective platform to fabricate stable wide-bandgap semiconducting devices. All the discoveries offer the solid basis to break through bottlenecks of organic/polymer wide-bandgap semiconductors by the improvements of overall performances.     

Nematodynamics and structures in junctions of cylindrical micropores

ABSTRACT

We explore equilibrium structures and flow-driven deformations of nematic liquid crystals confined to 3D junctions of cylindrical micropores with homeotropic surface anchoring. The topological state of the nematic ordering field in such basic unit of porous networks is controlled by nematic orientation profiles in individual pores, anchoring frustration along the edges of joining pores and coupling to the material flow field. We numerically investigate formation of the flow-aligned configurations in single cylindrical pores and pore junctions. Depending on the arrangement of inlet and outlet flows in the junction, we demonstrate existence of numerous stationary nematic configurations, characterised by specific bulk defects and surface disclinations along joining edges. Observed bulk defects are nonsingular escaped structures, disclinations in the form of loops or disclination lines pinned to the joining edges of the pores. Furthermore, we show examples of defect dynamics during the flow-induced topological transformations.     

Ultrasonic characterization of point defects induced by cross slip under pure shear

Longitudinal wave velocity is used to characterize the point defects in crystalline solids. High purity Al single crystal was selected for both the finite element analysis and experimental work. Since the jog motions of dislocations caused by intersected slides such as cross slips induce point defects, the total amount of cross slips was calculated instead of calculating directly from the point defects. The effect of crystal orientations on total amount of cross slips under pure shear was also investigated via the finite element method. The result suggest that if the initial shear stress direction is located at the inner side of stereographic triangle, only single slip activities occurred at the beginning of plastic deformation and no effects due to point defects were present. However, as the shear stress direction rotates along the slip direction, point defects are induced by cross slips between primary and secondary slip systems due to work-hardening. This phenomenon was then examined by measuring longitudinal wave velocity changes propagating in Al single crystal subjected to the combination loads of equi-biaxial tension and compression (a pure shear state). Good qualitative agreement between the finite element result and measured data suggest that the longitudinal wave velocity can be used as an index to characterize point defects in crystalline materials.     

Identification and localization of organic coating degradation onset by impedance imaging

The aim of this work was to demonstrate the potential of a localized impedance measurement technique to identify and spatially localize the onset spots of polymeric coating degradation. The technique, which has not yet been applied in the field of organic coatings, utilizes atomic force microscopy (AFM) in contact mode. During the scan a single-frequency voltage perturbation signal is applied between the AFM tip and the coated metal substrate. A current response signal is registered. As a result an impedance map of the scanned region is created. The method was applied to investigation of acrylic coating degradation during exposure to UV radiation. Localized topography and impedance images revealed formation of micro-cracks in the coating layer, which gradually converted into through-the-coating defects with an increase in the irradiation time. Thus the method allowed early identification and localization of the sites of degradation onset, which was not possible using classical impedance measurement.