Aufbau und Erprobung von Flächenstrahlungsquellen als Sekimdärnormale zur Prüfung von Kontaminationsmeßgeraten für Betastrahler und zur Beglauhigung von Flächenstrahlungsquellen als Normale

Zur Prüfung von Kontaminationsmeβgeräten und zur Beglaubigung von Flächenstrahlungsquellen als Normale wurden im Deutscheti Amt für Meβwesen und Warenprüfung zwei Sälze von Flächenstrahlungsquellen mil den Betastrahlen ⁹⁰Sr/⁹⁰Y, ²⁰¹Tl und ⁶⁰Co angefertigt. Durch das dabei verwendete Herstellungsverfahren, bei dem je ein Tropfen rudioakliver Lösung in ein Feld eines vorgegebenen Rasters gebracht wurde, konnte eine sehr gleichmäβige Verteilung der akliven Substanz über die Quellenfläche erreicht und eine unmiltelbare Bestimmung der Flächenaktivitätswerte ermöglicht werden. Der besondere Aufbau der Flächenstrahlungsquellen geslatlet es, auf einfache Weise Meβfehler bei Kontaminationsme βgeräten, die durch das Material der Unterlage, auf dem sich die aktive Substanz befindet, und durch die Dicke der akliven Schicht hervorgerufen tcerden, zu erfassen oder zu eliminieren.     

Zur Berechnung von Geometriefaktoren bei der Kernstrahlungsmessung

Der Geometriefaktor von radioaktiven umschlossenen oder offenen Strahlenquellen hängt bei der Messung mittels einer Kernstrahlungsmeßsonde von der räumlichen Anordnung der Strahlenquelle zu der strahlenexponierten wirksamen Fläche des Detektors und von der Geometrie der Strahlenquelle selbst ab. Fūr punktförmige Strahler in verschiedenen Positionen, Geraden, Kreisflächen und Zylinder wurde in möglichst einheitlicher Vorgehensweise die Berechnung der Geometriefaktoren bezüglich kreisförmiger ebener Detektionsflächen vorgenommen und rechentechnisch in Form von BESM 6-Algolprogrammen realisiert. Die Berechnungsergebnisse sind untereinander konsistent und wurden möglichst durch unabhängige Verfahren oder experimentelle Werte kontrolliert. Die Rechengenauigkeit kann gemäß den vorliegenden Anforderungen frei gewählt werden.     

Teil III. Edelgasdetektoren,Indirekter Elektron-Mobility-Detektor und Schlußfolgerungen

Die Multiplikation von Ladungsträgern durch feldbeschleunigte Elektronen erfolgt im Bereich der unselbständigen Entladung. Sie wurde von Lovelock [1] erstmals für β-Argondetektoren zur Steigerung der Empfindlichkeit E_N angewandt. Detektoren im Bereich der selbständigen Entladung [2] haben sich nicht bewährt.     

Precise Radiometry: Some Recent Aspects of Fruitful Interaction with Atomic Physics

Modern radiometric analytics demands a complex consideration of nuclear and electron shell processes, if more pretentious aims are envisaged. As an example the small variation of decay rates of radionuclides presents possibilities for information on chemical situations of decaying atoms. In principle this phenomenon is well known since many years, but now the situation is such that, e.g. in ^99mTc internal conversion, a full agreement of the difficult experiments and the respective theory was established. The secondary emission of X-rays as a consequence of high excitation of electron shells in combination with nuclear transitions supplies another example for a methodical progress of radiometry. Investigations on ⁵¹Cr as an electron capture nuclide have shown that chemically induced variations of the K_α to K_β X-ray intensity ratio is at least qualitatively understood.     

Conversion Electron Moessbauer Spectroscopie Studies on Ion Implanted Iron Layers

Conversion electron Moessbauer spectroscopy (CEMS) is a method very suitable for the study of ion implanted iron. It is demonstrated on nitrogen and phosphorus implanted iron layers. Using this technique not the 14.4-keV-gamma-rays as in the case of the conventional Moessbauer transmission experiments but the conversion and Auger electrons are detected. These electrons have a maximum energy of 7.3 keV. The Moessbauer signal can be obtained from a surface layer of about 300 nm. But the main fraction of the signal, namely 65%, comes from the first 50 nm. This range is just interesting for ion implantation. Depending on the test conditions different iron nitrides are formed by the nitrogen implantation and the phosphorus implantation can result in both amorphization and compound formation in the implanted layer.     

The effect of thermal reactor neutron irradiation on semi-insulating GaN

Semi-insulating Gallium nitride was irradiated by fast and thermal neutrons with fluences from 10¹⁴ to 10¹⁶ n/cm². Depth-resolved cathodoluminescence spectroscopy was used to determine defects changes before and after irradiation. The results revealed two kinds of defects affected near-band emission recombination from two opposite directions. One was attributed to irradiation-induced N vacancies that contribute to near-band emission recombination. Another was attributed to irradiation-induced deep level defects that contribute to sub-band gap recombination and thus decrease the near-band emission recombination.     

Swift heavy ion irradiation-induced modifications in structural and electrical properties of Y3+-substituted yttrium iron garnet

The consequences of 50 MeV Li³⁺ ion irradiation (fluence: 5×10¹³ ions/cm²) on the structural and electrical properties of the Y_3+xFe_5?xO₁₂ (x=0.0, 0.2, 0.4 and 0.6) garnet system have been investigated over the temperature range of 300–673 K. It is found that the percentage formation of an additional yttrium orthoferrite phase observed along with the bcc garnet phase considerably reduces for x=0.4 and 0.6 compositions after swift heavy ion (SHI) irradiation. The nature of thermal variation of DC resistivity curves for x=0.0 and 0.2 compositions is different from that for x=0.4 and 0.6 compositions. The SHI irradiation influences the magnitude of DC resistivity and conduction mechanism for the single-phase compositions while for mixed-phase compositions they remain unaffected. The results have been explained in the light of replacement of magnetic (5μ_B), smaller (0.64 Å), Fe³⁺ ion by nonmagnetic (0μ_B), larger (0.89 Å), Y³⁺ ion, the presence of the yttrium orthoferrite phase and swift heavy ion irradiation-induced paramagnetic centers in the system.     

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.     

The impact of scaling on single event upset in 6T and 12T SRAMs from 130 to 22 nm CMOS technology

ABSTRACT

As transistor sizes scale down to nanometres dimensions, CMOS circuits become more sensitive to radiation. High-performance static random access memory (SRAM) cells are prone to radiation-induced single event upsets (SEU) which come from the natural space environment. The SEU generates a soft error in the transistor due to the strike of an ionizing particle. Thus, this paper compares the endurance of 12T SRAM and 6T SRAM circuit on 130 up to 22?nm CMOS technology towards SEU. Besides that, this paper discusses the trend of critical linear energy transfer (LET) and collected charge due to technology scaling for the respective circuit. The critical LET (LETcrit) and critical charge (Qcrit) of 6T are approximately 50% lower compared with 12T SRAMs.