Abnormal Raman spectra in Er‐doped BaTiO3 ceramics

Greatly enhanced and abnormal Raman spectra were discovered in the nominal (Ba_{1 − x}Er_x)Ti_{1 − x/4}O₃ (x = 0.01) (BET) ceramic for the first time and investigated in relation to the site occupations of Er³⁺ ions. BaTiO₃ doped with Ti‐site Er³⁺ mainly exhibited the common Raman phonon modes of the tetragonal BaTiO₃. Er³⁺ ions substituted for Ba sites are responsible for the abnormal Raman spectra, but the formation of defect complexes will decrease spectral intensity. A large increase in intensity showed a hundredfold selectivity for Ba‐site Er³⁺ ions over Ti‐site Er³⁺ ions. A strong EPR signal at g = 1.974 associated with ionized Ba vacancy defects appeared in BET, and the defect chemistry study indicated that the real formula of BET is expressed by (Ba_{1 − x}Er_3x/4)(Ti_{1 − x/4}Er_x/4)O₃. These abnormal Raman signals were verified to originate from a fluorescent effect corresponding to ⁴S_3/2→⁴I_15/2 transition of Ba‐site Er³⁺ ions. The fluorescent signals were so intense that they overwhelmed the traditional Raman spectra of BaTiO₃. The significance is that the abnormal Raman spectra may act as a probe for the Ba‐site Er³⁺ occupation in BaTiO₃ co‐doped with Er³⁺ and other dopants. A new broad EPR signal at g = 2.23 was discovered, which originated from Er³⁺ Kramers ions. Copyright © 2014 John Wiley & Sons, Ltd.     

Multi‐factors on photocatalytic properties of Y‐doped Bi2WO6 crystallites prepared by microwave‐hydrothermal method

Different contents of Y‐doped Bi₂WO₆ crystallites were synthesized by a microwave‐hydrothermal method. The photocatalytic properties with different contents of Y‐doped Bi₂WO₆ crystallites were studied. The Y‐doped Bi₂WO₆ crystallites were also characterized by XRD, EDX, SEM and UV‐vis DRS and the multi‐factors on photocatalytic properties of Y‐Doped Bi₂WO₆ crystallites were discussed. The results indicate that Y³⁺ replacing Bi³⁺ enters into the Bi₂WO₆ lattice, producing a degree of Bi₂WO₆ lattice distortion. It also has an impact on the crystallinity of Bi₂WO₆ and the band gap is from 2.49 eV to 2.71 eV. The photocatalytic results show that when the content of Y doping becomes 10%, the degradation rate of rhodamine B is above 90% after 40 min irradiation, which shows that doping the proper rare earth ions is conducive to the photocatalytic properties of Bi₂WO₆ crystallites.     

V高掺杂量对ZnO（GGA+$lt;em$gt;U$lt;/em$gt;）导电性能和吸收光谱影响的研究

目前,在V高掺杂ZnO中,当V掺杂量摩尔数为0.03125–0.04167的范围内,掺杂量越增加,电阻率越增加或越减小的两种实验结果均有文献报道. 为解决这个矛盾,本文采用密度泛函理论的第一性原理平面波超软赝势方法,构建未掺杂ZnO,V高掺杂的Zn_1-xV_xO （x=0.03125,0.04167） 两种超胞模型,首先,对所有体系进行几何结构优化,在此基础上,采用GGA+U的方法,计算所有体系的能带结构分布、态密度分布、吸收光谱分布. 结果表明,当掺杂量摩尔数为0.03125–0.04167的范围内,V掺杂量越增加,掺杂体系体积越增加,总能量越下降,形成能越减小,掺杂体系越稳定,相对电子浓度越减小,迁移率越减小,电导率越减小,最小光学带隙越增加,吸收光谱蓝移越显著. 计算结果与实验结果相一致. 关键词： V高掺杂ZnO 电导率 吸收光谱 第一性原理     

低温燃烧法制备的Ho∶YbGG多晶粉体及其发光性能

以柠檬酸为燃烧剂,掺杂摩尔分数为2%的Ho3+,采用低温燃烧法制备Ho∶YbGG多晶粉体。通过对样品的X射线衍射和扫描电镜分析,确定最佳煅烧温度为900℃。样品的吸收光谱在536 nm和645 nm处出现较强吸收峰,分别对应Ho3+的5I8→5F4(5S2)和5I8→5F5能级跃迁;在940 nm和982 nm处出现强吸收谱带,对应于Yb3+的2F7/2→2F5/2能级跃迁。样品的荧光光谱在1 989 nm处有强发射谱带,对应于Ho3+的5I7→5I8能级跃迁。样品可以发出较强的上转换绿光和红光,分别对应于Ho3+的5F4(5S2)→5I8和5F5→5I8能级跃迁。对相应的上转换机制也进行了分析。     

Tm~(3+)掺杂碲酸盐微结构光纤激光器

以1 560 nm的掺Er3+石英光纤激光器作为泵浦源,在Tm3+掺杂的碲酸盐微结构光纤中实现了2μm的激光输出。采用棒管法拉制出了纤芯由6个空气孔包围的微结构光纤,选取了2.8 cm的微结构光纤,研究了其激光性能,获得了9 mW波长为1 872 nm的激光输出,激光的斜效率为6.53%,激光阈值为200 mW。研究结果表明,所制备的Tm3+掺杂碲酸盐微结构光纤可用于制作紧凑型2μm光纤激光器。     

水热法掺杂的Yb^3＋对NiYbxFe2-xO4铁氧体磁性和形貌的影响

本文以研究稀土元素镱掺杂对镍铁氧体磁性能的影响用为目的,采用水热法,去离子水作为溶剂,用硝酸镍（Ni（NO3）2·6H2O）,硝酸铁（Fe（NO）3·9H2O）,硝酸镱Yb（NO3）3·5H2O,氢氧化钠（NaOH）为原料,制备出镍铁氧体NiYbxFe2-xO4纳米粉体.利用X射线衍射（XRD）,X射线能谱仪（EDS）,扫描电镜（SEM）,透射电子显微镜（TEM）,振动样品磁强计（VSM）在成分,定性定量和形貌等方面进行了表征.结果表明,稀土元素镱掺杂将会降低镍铁氧体纳米粉体的晶粒尺寸.稀土离子磁矩的磁稀释作用导致镍铁氧体纳米磁性材料的饱和磁化强度降低,并且随着掺杂量的逐渐增加,样品的饱和磁化强度和矫顽力逐渐降低.     

Four-wave mixing in dual wavelength fiber laser utilizing SOA for wavelength conversion

In this paper, a novel configuration of a wavelength converter is set forth by utilizing a semiconductor optical amplifier (SOA) as a nonlinear gain medium to generate a four-wave mixing (FWM) effect by using a dual wavelength bi-erbium-doped fiber laser that uses an Arrayed Waveguide Grating (AWG) together with two optical channel selector (OSC) as selective elements to function as a dual wavelength switchable pump power. The four-wave mixing (FWM) is produced with a wavelength detuning of 7 nm from the pump and signal which used is as the converted signal at wavelength 1532.8 nm or 1534.5 nm for transferring data from the input signal at wavelength 1547.0 nm. Thus, even though the conversion efficiency is as low as −43 dB, it is still possible for applications as a wavelength converter.     

Laser scribing of gallium doped zinc oxide thin films using picosecond laser

We report on a comprehensive study of picosecond laser scribing of gallium doped zinc oxide (GZO) thin films deposited on glass substrates using 355 nm, 532 nm and 1064 nm radiation, respectively. In this study, we investigated the influence of front side and rear side irradiation and determined single pulse ablation thresholds for all three wavelengths. Good ablation quality with full electrical isolation, steep groove walls and a smooth groove bottom was achieved by 355 nm rear side processing with a scanning speed of 224 mm/s. Ridges at the groove rims were found to be between 15 nm and 45 nm high. At similar scanning speed, laser scribing using 532 nm and 1064 nm radiation resulted in a lower ablation quality due to a higher roughness of the groove bottoms or higher ridges at the groove rims.     

Synthesis of S/Cr doped mesoporous TiO2 with high-active visible light degradation property via solid state reaction route

S/Cr doped mesoporous TiO₂ (S-TiO₂, Cr-TiO₂, S-Cr-TiO₂) were successfully synthesized via a simple, effective and environmental benign solid state reaction route. The low angle XRD patterns demonstrated that the resulting samples possess mesostructures. The further characterizations via N₂ adsorption-desorption and XPS showed that the typical S/Cr co-doped mesoporous TiO₂ (S-Cr-TiO₂(5S-5Cr)) possesses mesopore with the high specific surface area of 118.4 m²/g and narrow pore size distribution, and both S and Cr have been incorporated into the lattice of TiO₂ with the amounts of 4.16% sulfur and 7.88% chromium, respectively. And Raman spectroscopy shows that the surface of S-Cr-TiO₂ (5S-5Cr) material possesses stretching vibrational peaks at ∼709, ∼793 cm⁻¹ are assignable to the Ti-O-Cr, O-Cr (Ti)-OH bonds, respectively. Interestingly, the UV-vis displayed that the absorption regions of S/Cr doped mesoporous TiO₂ cover the visible light region. As for the series of S-Cr-TiO₂ samples, the absorption region even extends to near infrared region with strong adsorption. Moreover, compared with the pure titanium dioxide (P25-TiO₂), the photodegradation properties of bromocresol green (BCG) on the S/Cr doped mesoporous TiO₂ showed excellent photocatalytic properties under visible light irradiation. Within 50 min visible light irradiation, 82.6% of the initial BCG was degraded for the S-Cr-TiO₂ (6S-4Cr) photocatalyst.     

Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films

The pulsed laser deposition (PLD) technique is used to deposit Gallium doped zinc oxide (GZO) thin films on glass substrates at 250 with different Gallium (Ga) doping concentration of 0, 1.0, 3.0 and 5.0%. The influence of Ga doping concentration on structure, chemical atomic compositions, electrical and optical properties was investigated by XRD, XPS, Hall measurement and UV spectrophotometer, respectively. The relationship between electrical properties and Ga doping concentration was clarified by analyzing the chemical element compositions and the chemical states on the GZO films. It is found that the carrier concentrations and oxygen vacancies in the GZO films increase with increasing Ga doping concentration. The lowest resistivity (3.63 × 10⁻⁴ Ω cm) and barrier height of grain boundaries (14 mV) were obtained with 3% Ga doping. In particular, we suppose the band gap of 5% Ga doping sample larger than that of 3% Ga doping sample is due to the quantum size effect from the amorphous structure rather than Moss-Burstein shift.