稀薄气体二维外部柱体绕流特性研究

本文采用直接模拟蒙特卡罗方法对稀薄气体二维外部柱体绕流问题进行了数值模拟。结果表明:外部绕流问题,在特定情况下会产生激波,激波的产生,不仅与气体的稀薄程度有关,还与来流马赫数有关。而气流与壁面之间的换热,随来流马赫数增加而增加,随气体稀薄程度增加而减小。     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

Relaxation-Induced Suppression of Vortex Disturbances in a Molecular Gas

The influence of thermal excitation on a finite-amplitude vortex disturbance in a shear flow of a molecular gas is studied in a model problem. The evolution of such vortex structures is typical of both the nonlinear stage of the laminar–turbulent transition and for developed turbulence. Since the excitation level was assumed to be comparatively low, full Navier–Stokes equations for a compressible heat-conducting gas were used in calculations; nonequilibrium was taken into account by the coefficient of bulk viscosity. As the bulk viscosity increases in the range of realistic values, the disturbance-energy damping rate in a weakly compressible flow increases approximately by 10%. The increase in the Mach number enhances the effect of disturbance suppression.     

Solubility parameter determination of cationic surfactants by inverse GC

Summary The solubility parameters of cationic surfactants were obtained using the inverse gas chromatographic technique. The surfactants didodecyl dimethyl ammonium bromide, dioctadecyl dimethyl ammonium bromide and dodecyl pyridinium chloride were used as stationary phase and retention data of different probe solutes were measured at different temperatures. The results were analysed by the combination of Flory-Huggins and Hildebrand theories, and the solubility parameters of the surfactants were obtained in a range of temperatures between 80–120°C.     

燃煤烟气中As、Se、Pb的形态分布及S、Cl元素对其形态分布的影响

基于化学热力学平衡分析方法，计算分析了燃煤烟气中重金属As、Se、Pb的形态分布规律，研究了S、Cl等元素对As、Se、Pb的形态分布规律的影响。结果表明，氧化性气氛下，As以As₂O₅、As₄O₆、AsO等氧化物的形式存在；Se主要以SeO₂形式存在；Pb在1000 K以下主要是固态PbSO₄，1200 K以上为气态PbO。还原性气氛下，As在较低温度时为固态As₂S₂，900-1400 K以As₂、AsS、AsN气体共存，2000 K以上全部转化为气态AsO。Se在1100 K以下主要以气态H₂Se存在，1100 K开始生成SeS和Se₂气体，1800 K时主要是气态Se和少量气态SeO；Pb在中低温时主要是PbS，1800 K以上气态Pb为主要存在形态。S在还原性气氛下增大了AsS（g）、PbS（g）、SeS（g）的比例，氧化性气氛下对As、Se、Pb形态分布基本无影响；Cl无论在氧化还是还原气氛下对As、Se影响均较小，但对Pb的形态分布影响较大。     

Tunable narrow-band infrared emitters from hexagonal lattices

In this work, we present both the theoretical basis as well as supporting experimental measurements for development of a novel mid-infrared thermally stimulated narrow band emitter with a spectral bandwidth of less than 10%. To achieve this, we utilize a metallized-surface 2D photonic crystal of air voids in a silicon background with hexagonal structure symmetry. Our results are based on the generation of discrete surface plasmon (SP) modes in the thin metallized layer residing on the top surface. This yields a series of adequately spaced discrete peaks in the reflection spectrum, dominated by a single sharp feature corresponding to the lowest plasmon order, in an otherwise uniform highly reflective spectrum (>90%) over most of the IR spectrum. This, in turn, gives rise to a sharp absorption feature with a correspondingly narrow thermal emission peak in the emission spectrum. Transfer matrix calculations simulate well both the position and strengths of the absorption peaks. By altering the period of the surface photonic lattice, the SP peak and emissive band can be tuned to the desired wavelength. These devices promise a new class of tunable infrared emitters with high power in a narrow spectral bandwidth. Such narrow band sources are critical to achieving high efficiency gas sensors.     

高压沿面放电烟气脱硫技术动态实验研究

本文针对高压沿面放电活化气体的烟气脱硫技术,在静态实验研究的基础上进行了实验室冷态动态的实验研究。设计了便于反应和测量的动态实验装置。实验解释了电子束法脱硫技术中导致氨气泄漏的部分原因,验证了高压沿面放电脱硫技术可以在较低的运行电压下,达到提高脱硫效率,减少氨气泄漏的作用。     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

Molecular flow and wall collision age distributions

The use of storage cells has become a standard technique for internal gas targets in conjunction with high energy storage rings. In case of spin-polarized hydrogen and deuterium gas targets the interaction of the injected atoms with the walls of the storage cell can lead to depolarization and recombination. Thus the number of wall collisions of the atoms in the target gas is important for modeling the processes of spin relaxation and recombination. It is shown in this article that the diffusion process of rarefied gases in long tubes or storage cells can be described with the help of the one-dimensional diffusion equation. Mathematical methods are presented that allow one to calculate collision age distributions (CAD) and their moments analytically. These methods provide a better understanding of the different aspects of diffusion than Monte Carlo calculations. Additionally it is shown that measurements of the atomic density or polarization of a gas sample taken from the center of the tube allow one to determine the possible range of the corresponding density weighted average values along the tube. The calculations are applied to the storage cell geometry of the HERMES internal polarized hydrogen and deuterium gas target. Received 9 July 2001 and Received in final form 18 September 2001