高亮度白光LED用外延片的新进展

文章首先介绍了发光二极管（LED）的内量子效率、外量子效率的基本概念和提高量子效率的基本方法，接着对LED外延的结构和方法做了简要介绍．文章的第三和第四部分则着重介绍了提高内、外量子效率的外延方法，这些方法包括外延结构的优化，侧向外延生长，SiC和GaN衬底的生长，AIInGaN四元系有源区生长，非极性面、半极性面的外延，表面粗化结构生长，图形化二次外延结构．图形化蓝宝石衬底上的外延，提高载流子注入效率的结构和组分设计．文章的第五部分则介绍了基于可靠性和成本考虑的其他新型外延结构，第六部分介绍了提高LED可靠性的外延方法．最后得出结论：采用非极性面的GaN衬底，生长优化的LED结构，并结合光子晶体技术，可望取得突破性进展．     

低压闪蒸液滴形态和温度变化的研究

将液滴在常压下突然置于低压环境中,液滴由最初的平衡状态变成过热状态,发生闪蒸.本文实验研究了低压闪蒸液滴内部形态和温度的变化,系统描述了液滴闪蒸过程中的各种形态变化,总结了稳态闪蒸和稳态结冰过程中环境压力和初始温度对温度变化的影响.实验结果表明液滴闪蒸分六种形态.稳态闪蒸中环境压力越低,液滴的最终温度也越低;液滴的初始温度越高,降到最低温度的时间越长.稳态结冰过程中,液滴初始温度增加,液滴结冰温度和结冰回升最高温度也随之增加;液滴的结冰温度和回升最高温度随环境压力的增高而减小.     

Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer

High-temperature (HT) AIN films were grown on (0 0 0 1) sapphire by low-pressure flow-modulated (FM) metal organic vapor phase epitaxy (MOVPE) with and without inserting a thin medium-temperature (MT) AIN layer. To suppress parasitic reactions between the sources of trimethylaluminum (TMA) and ammonia (NH₃), TMA and NH₃ was introduced to the reactor of MOVPE by alternating supply way. Surface morphology and crystalline quality were characterized by a scanning electronic microscopy (SEM), atomic force microscopy (AFM) and X-ray rocking curve (XRC) measurements of (0 0 0 2) and (10-12) diffractions. The AFM and SEM measurements indicated that the thin MT-AIN layer had a strong influence on the surface morphology of the HT-AIN films. The surface morphology became quite smooth by inserting the thin MT-AIN layer and surface RMS roughness values were 0.84 nm and 13.4 nm for the HT-AIN films with and without inserting the thin MT-AIN buffer layer, respectively. By etching the samples in aqueous KOH solution, it was found that the polarity of AIN films was different, the HT-AIN film with the thin MT-AIN layer could not be etched, indicating that the film had an Al-polar surface; however, the film without the MT-AIN layer was etched, which was explained that that film had a N- or mixed-polar surface. The mechanism for the origin of the different polarity of HT-AIN with and without the thin MT-AIN layer was proposed and discussed in detail.     

梯度表面能材料上液滴运动特性实验

对水平和30°倾角放置梯度表面能材料表面上液滴运动特性进行了可视化实验,分析了液滴在梯度表面上运动速度的变化规律,以及液滴大小和表面倾角对运动速度变化的影响.实验结果表明:在梯度表面能材料上,液滴能获得较大的宏观运动速度,并可以沿30°倾角放置的梯度表面材料上自下而上的运动;大液滴较小液滴的峰值运动速度大,运动距离更远;液滴在运动过程中出现蠕动的现象.     

Structural evolution at the initial growth stage of perylene on Au(1 1 1)

We report on the structural evolution at the initial growth stage of perylene thin films on Au(1 1 1) surface. Scanning tunneling microscopy and spectroscopy have been employed to investigate the structural and electronic properties at 78 K. Rapid molecular diffusion was observed at low submonolayer coverage. Molecules form an ordered structure at monolayer coverage. For the second layer, impinging molecules nucleate into molecular islands with an ordered intermediate structure.     

Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

The use of a nitrogen electron cyclotron resonance (ECR) plasma source has allowed the growth of GaAsN at GaAs substrate temperatures as high as 600 °C, unlike the case for growth using radio frequency (RF) plasma sources, for which there is significant loss of nitrogen at substrate temperatures as low as 480-520 °C. Photoluminescence (PL) intensities are significantly improved at a substrate temperature of 600 °C and are further improved slightly by using an ion trap to extract charged species from the beam. As the trap voltage is increased there is a reduction in the total nitrogen concentration, as measured by secondary ion mass spectrometry (SIMS), and a slight increase in the active nitrogen concentration, as measured by PL. These observations are consistent, for example, with charged and active nitrogen species together being involved in the formation of point defects, however more work is needed to clarify what may well prove to be a complex situation.     

Si nucleation on Si(1 1 1)-7 × 7: From cluster pairs to 2D islands

Nucleation of 2D islands in Si/Si(1 1 1)-7 × 7 molecular beam epitaxy is studied using scanning tunneling microscopy (STM). A detailed analysis of the population of small amorphous clusters coexisting on the surface with epitaxial 2D islands has been performed. It is shown that small clusters tend to form pairs. The pairs serve as precursors for 2D islands as confirmed by direct STM observations of the smallest 2D islands covering two adjacent half-unit cells of the 7 × 7 reconstruction. It is proved with scaling arguments that the critical nucleus for 2D island formation consists not only of the pair itself, but also includes additional adatoms not belonging to the stable clusters.     

Tellurium delta‐doped InGaP layers grown by metalorganic vapour phase epitaxy

Heavily n‐type doped and several nanometres thick In_0.485Ga_0.515P layers are necessary for various devices. We studied the delta‐doping of this ternary with tellurium; the layers were grown by metalorganic vapour phase epitaxy (MOVPE), and diethyltelluride was used as the precursor. A maximum Hall sheet concentration of 2.75 × 10¹³ cm^–2 was achieved in our samples grown at 560 °C. The Te profiles were analyzed with secondary ion mass spectrometry (SIMS), and a very narrow spectrum with a full width at half maximum of 7.5 nm was measured. This value indicates that the memory effect, referred to in the literature, was practically eliminated with appropriate growth conditions. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)