准晶数学弹性力学和缺陷力学

对准晶数学弹性理论的基本概念和基本框架作了介绍,在此基础上分别针对目前已经发现的几类一维准晶、二维准晶和三维准晶讨论了其数学弹性的理论体系．为了求解准晶弹性的边值问题或初值一边值问题,还必须发展相应的方法论．物理工作者在研究准晶位错弹性问题中发展了Ｇｒｅｅｎ函数方法．针对一维与二维准晶弹性中几类问题提出了分解与叠加程序,这一程序的使用,使极其复杂的准晶弹性问题得到简化,进而引进位移函数或应力函数,把数目。庞大的准晶弹性基本方程化成一个或少数几个高阶偏微分方程,进一步使求解步骤大为简化．对三维立方准晶弹性也采用了类似步骤使求解过程大为简化．在以上化简的基础上,发展了准晶弹性的边值问题或初值一边值问题的复交函数方法和 Ｆｏｕｒｉｅｒ分析方法,求得了一系列准晶位错问题和裂纹问题的分析解（古典解）．在研究准晶弹性的边值问题古典解的同时,也讨论了同这些边值问题相对应的变分问题和广义解（弱解）以及这种弱解的数值方法──有限元法．在物理学家工作基础上开展的这些工作可以看作对经典数学弹性理论和方法、经典Ｖｏｌｔｅｒｒａ位错理论、普通结构材料断裂力学和经典有限元的某些发展．此外,还把一维六方准晶弹性动力学的结果与统计物理的某些      

On the synthesis and characterization of La doped MgB2 superconductor

We report the synthesis of La doped MgB₂ superconductors with nominal compositions Mg_1‐xLa_xB₂ (with x = 0.01, 0.03, 0.05, 0.07) by solid state reaction at ambient pressure. A special encapsulation technique has been used by us to prepare high quality superconducting MgB₂ samples. The bulk polycrystalline samples possess superconducting transition temperature T_c(R=0) ranging between 36‐39 K. It has been found that transport critical current density J_c of the samples change significantly with the doping level of La. A high transport (J_c) value ∼1.9 x 10³ A/cm² at 15 K has been achieved for Mg_0.97La_0.03B₂ sample. The XRD and TEM investigations indicate that the samples prepared by encapsulation method are devoid of MgO, which is generally found when synthesis of MgB₂ is done through sintering of Mg and B powders. The detailed microstructural investigations of Mg_0.97La_0.03B₂ specimens by transmission electron microscopy (TEM) reveal the presence of partial dislocation network, moiré fringes and superlattice structure in the as synthesized samples. The higher transport critical current density observed in Mg_0.97La_0.03B₂ superconductor has been attributed to the partial dislocations which are capable of providing pinning centres. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

坝基岩体错位的发现与分析

由寒武系坚硬白云岩组成的汾河二库坝基开挖后,岩体沿顺层开裂面发生错位,错位波及几乎整个坝基,错距达1～7cm.本文对坝基岩体错位进行了分析研究,认为岩体错位是基坑开挖后地应力释放的结果。     

氮化硅粉末的冲击波活化研究

 研究了经过两种不同压力15.7 GPa和25.6 GPa的冲击波活化的Si₃N₄粉末的表观和显微特性及其烧结特性。结果表明冲击波活化在烧结过程中有明显的增进密实化进程的作用。     

六方金属在疲劳过程中的位错组态演化──兼论位错理论和协同论在材料强度学中的应用

简述了位错理论发展及在中国传播的历史、位错理论的应用领域、金属中常见的位错组态;介绍了协同论在位错研究中的应用,并据此分析讨论了在钛、锆等六方金属中所获得的某些实验结果。      

掺杂LiNbO3晶体的生长缺陷与其体全息存储性能的研究

本文叙述了利用侵蚀法研究掺杂LiNbO3的晶体缺陷,并讨论了晶体缺陷的形成机理以及其与体全息存储性能的关系.通过实验发现了常温下侵蚀铌酸锂晶体的规律,并利用侵蚀法观测到铌酸锂晶体样品表面呈三角锥状的位错侵蚀坑.测量了晶体样品的散射噪声,从中找出了晶体缺陷与存储图像质量关系.并发现掺Zn的Fe:LiNbO3晶体其晶体缺陷减少,晶体体全息存储性能有了明显提高.     

Ce3+:YAG晶体位错的研究

本文报导了用中频感应加热提拉法生长Ce3+:YAG晶体,直径达45mm.对样品采用不同的化学试剂进行了时间不等的腐蚀,用偏光显微镜观察到不同形貌的位错蚀坑,分析了位错与晶体结构及生长工艺参数等因素之间的关系.     

r面白宝石单晶的温梯法生长及缺陷研究

本文描述使用温梯法(TGT)生长(1102)方向的白宝石单晶,应用X射线双晶摇摆曲线(XRC)测定了晶体内部的完整性,再利用KOH熔体腐蚀出样品的r面(1102)上的位错蚀坑,借助扫描电子显微镜(SEM)进行观察,发现r面白宝石的位错腐蚀坑呈等腰三角形,并且有台阶状结构,并分析了位错的成因.     

QUASICONTINUUM SIMULATION OF NANOINDENTATION OF NICKEL FILM

A large-scale atom simulation of nanoindentation into a thin nickel film using thequasicontinuum method was performed. The initial stages of the plasticity deformation of nickelwere studied. Several useful results were obtained as follows: (1)The response of the load versusindentation depth—on the load versus indentation depth curve, besides the straight parts cor-responding to the elastic property of nickel, the sudden drop of the load occurred several times;(2) The phenomena of dislocation nucleation—the dislocation nucleation took place when theload descended, which makes it clear that dislocation nucleation causes the drop of the load;(3)The mechanism of the dislocation emission—the Peierls-Nabarro dislocation model and a pow-erful criterion were used to analyze the dislocation emission. And the computational value was ingood agreement with the predict value; (4) The density of geometrically necessary dislocations.A simple model was used to obtain the density of geometrically necessary dislocations beneaththe indenter. Furthermore, the influence of the boundary conditions on the simulation results wasdiscussed.     

Atomic force microscopy studies on liquid inclusions and induced defects of cadmium mercury thiocyanate crystal

Liquid inclusions and various defects accordingly induced on a nonlinear optical material of CMTC crystal were investigated by atomic force microscopy. Liquid inclusions are chiefly caused by formation of macrosteps, which result from impurity‐induced inhibiting of step growth and meeting of step trains advancing along different directions. Liquid inclusions induce generation of dislocations and even cracks within the crystal by three‐dimensional nucleation growth. Liquid inclusions also provide screw dislocation growth sources, leading to formation of spiral hillock trains with ridged tails. Etching experiments reveal circular hollow cores, indicative of screw dislocation growth, and negative crystals resulting from further crystallization in the liquid inclusions. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)