HCN(HNC)与NH3, H2O和HF分子间相互作用的理论研究

在MP2/aug-cc-pVTZ水平上, 对HCN(HNC)与NH3, H2O和HF分子间可能存在的氢键型复合物进行了全自由度能量梯度优化, 通过在相同水平上的频率验证分析发现了稳定的分子间相互作用形式是HCN(HNC)作为质子供体或作为质子受体形成的复合物. 基组重叠误差对总相互作用能的影响均小于3.34 kJ/mol. 通过自然键轨道(NBO)分析, 研究了单体和复合物中的原子电荷和电荷转移对分子间相互作用的影响. 对称性匹配微扰理论(SAPT, Symmetry Adapted Perturbation Theory)能量分解结果表明, 在分子间相互作用中, 静电作用与诱导作用占主导地位, 而诱导作用与复合物的电荷转移之间具有良好的正相关性.     

Ab initio and DFT studies on hydrolyses of phosphorus halides

Hydrolyses of phosphorus halides, (RO)(2)POX where R = H or Me and X = F or Cl, in the gas phase and in the reaction field have been investigated theoretically with ab initio and the density functional theory (DFT). The free energy of activation in the reaction field was also estimated using the Onsager method with a correction of entropy change and basis set superposition error (BSSE). The reaction of (MeO)(2)POF proceeds through a path with bifunctional catalysis regardless of the medium, but the reaction of (MeO)(2)POCl proceeds through bifunctional and general base catalysis in the gas phase and in water, respectively. The estimated free energy barrier of 23 kcal/mol for the hydrolysis of (MeO)(2)POF is in good agreement with the experimental values of 24 kcal/mol, and relative barrier of 3 kcal/mol to the (MeO)(2)POCl is also in good agreement with the experimental values of 5 kcal/mol of diisopropyl phosphorus halides ((Pr(i)O)(2)POX, X = F and Cl).     

Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method

Depth profiles of Ga₂O₃/a-SiO₂/Al₂O₃- substrate, Ga₂O₃/a-Si₃N₄/Al₂O₃- substrate, and Ga₂O₃/Al₂O₃ substrate thin layers were determined by the SNMS/HFM method. Al diffusion from the Al₂O₃ substrate was investigated after 50, and in some cases after 600 hours of heat treatment time at different temperatures (600 °C,850 °C,950 °C,1050 °C and 1150 °C). The diffusion coefficient of Al at 850 °C was found to be D _Al=8.7 * 10^–18 cm²/s in amorphous SiO₂; D _Al=1.5*10^–17 cm²/s in amorphous Si₃N₄ and D _Al=5.5* 10^–16 cm²/s in Ga₂O₃ at 600 °C, respectively. The possible diffusion mechanism is explained in terms of the metal-oxygen bond-strengths. Although the studied materials have high resistivity at room temperature, the applied SNMS/HFM method has proven to be an efficient surface analytical tool even in these cases.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Optimal convergence properties of kernel density estimators without differentiability conditions

Let X ₁, X ₂, ..., X _n be independent observations from an (unknown) absolutely continuous univariate distribution with density f and let % MathType!MTEF!2!1!+-% feaafeart1ev1aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn% hiov2DGi1BTfMBaeXafv3ySLgzGmvETj2BSbqefm0B1jxALjhiov2D% aebbfv3ySLgzGueE0jxyaibaiiYdd9qrFfea0dXdf9vqai-hEir8Ve% ea0de9qq-hbrpepeea0db9q8as0-LqLs-Jirpepeea0-as0Fb9pgea% 0lrP0xe9Fve9Fve9qapdbaqaaeGacaGaaiaabeqaamaabaabcaGcba% GabmOzayaajaGaaiikaiaadIhacaGGPaGaeyypa0Jaaiikaiaad6ga% caWGObGaaiykamaaCaaaleqabaGaeyOeI0IaaGymaaaakmaaqadaba% Gaam4saiaacUfadaWcgaqaaiaacIcacaWG4bGaeyOeI0Iaamiwamaa% BaaaleaacaWGPbaabeaakiaacMcaaeaacaWGObGaaiyxaaaaaSqaai% aadMgacqGH9aqpcaaIXaaabaGaamOBaaqdcqGHris5aaaa!5356!\[\hat f(x) = (nh)^{ - 1} \sum\nolimits_{i = 1}^n {K[{{(x - X_i )} \mathord{\left/ {\vphantom {{(x - X_i )} {h]}}} \right. \kern-\nulldelimiterspace} {h]}}} \] be a kernel estimator of f(x) at the point x, \s-<x<, with h=h _n (h _n O and nh _n , as n) the bandwidth and K a kernel function of order r. Optimal rates of convergence to zero for the bias and mean square error of such estimators have been studied and established by several authors under varying conditions on K and f. These conditions, however, have invariably included the assumption of existence of the r-th order derivative for f at the point x. It is shown in this paper that these rates of convergence remain valid without any differentiability assumptions on f at x. Instead some simple regularity conditions are imposed on the density f at the point of interest. Our methods are based on certain results in the theory of semi-groups of linear operators and the notions and relations of calculus of finite differences.This research was supported in part by grants from the Natural Sciences and Engineering Research Council of Canada and the University of Alberta Central Research Fund.     

On the validity of the counterpoise correction for the basis set superposition error including the fragment relaxation terms

It is demonstrated that relatively large geometrical changes make Emsley et al.'s assumption (J Am Chem Soc (1978) 100:3303) on the counterpoise correction for the basis set superposition error including the fragment relaxation terms unacceptable. Received: 23 September 1997 / Accepted: 31 October 1997     

Influence of surface structure on surface analytical statements

The influence of surface structure of technical materials on results and statements of surface analytical methods has been investigated. Especially surface roughness as a typical property of rolled products has been observed. For this purpose samples of steel (technical surface, roughness up to 5 m) and silicon wafers (polished surface) have been analyzed by SNMS and GDOS in order to get information about changes of the surface roughness as function of the sputtering time and their influence on the statements about the depth profiles obtained.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

Error of Atomic Charges Derived from Electrostatic Potential

The purpose of this article is to show that CHELP, CHELPG, and Merz and Kollman undergo error for the charge on atoms of HCOO^– (H₂O) _n for n = 1 6. We also demonstrate that the CHELP, CHELPG, and Merz and Kollman show error for the tendency toward change in the charges on carbons for CH₃NH⁺ ₃ (CH₃)₂NH⁺ ₂ (CH₃)₃NH⁺ (CH₃)₄N⁺.     

Efficient synthesis of magnetic nanoparticle-Musa acuminata peel composite for the adsorption of anionic dye

The impregnation of magnetite (Mt) nanoparticle (NPs) onto Musa acuminata peel (MApe), to form a novel magnetic combo (MApe-Mt) for the adsorption of anionic bromophenol blue (BPB) was studied. The SEM, EDX, BET, XRD, FTIR and TGA were used to characterize the adsorbents. The FTIR showed that the OH and CO groups were the major sites for BPB uptake onto the adsorbent materials. The average Mt crystalline size on MApe-Mt was 21.13 nm. SEM analysis revealed that Mt NPs were agglomerated on the surface of the MApe biosorbent, with an average Mt diameter of 25.97 nm. After Mt impregnation, a decrease in BET surface area (14.89 to 3.80 m²/g) and an increase in pore diameter (2.25–3.11 nm), pore volume (0.0052–0.01418 cm³/g) and pH point of zero charge (6.4–7.2) was obtained. The presence of Pb(II) ions in solution significantly decreased the uptake of BPB onto both MApe (66.1–43.8%) and MApe-Mt (80.3–59.1%), compared to other competing ions (Zn(II), Cd(II), Ni(II)) in the solution. Isotherm modeling showed that the Freundlich model best fitted the adsorption data (R² > 0.994 and SSE < 0.0013). In addition, maximum monolayer uptake was enhanced from 6.04 to 8.12 mg/g after Mt impregnation. Kinetics were well described by the pseudo-first order and liquid film diffusion models. Thermodynamics revealed a physical, endothermic adsorption of BPB onto the adsorbents, with ΔH^o values of 15.87–16.49 kJ/mol, corroborated by high desorption (over 90%) of BPB from the loaded materials. The viability of the prepared adsorbents was also revealed in its reusability for BPB uptake.     

本征值有限元近似的一个抽象误差估计式

设T：LZ（fi）MLZ（fi）是自共轭全连续算子，SgCLZ（fi）是分片。次有限元空间，几：LZ、St是有限秩自共轭算子，IITh-Tllo、0（h、0）．考虑本征值问题：及其近似用（·，·）和DD·D【。·分别表示h（m中内积和范数·ID·卜F表示w认｝（m中范数，简记D卜队。为D卜卜·因为T自共轭全连续，所以它有可数无穷个本征值h，人，...人，...．其相应的本征函数（2丹构成完全标准直交系，所以VZELZ（m设几的本征值为A。l，汕。，...，汕n，相应的本征函数为如山，卜则。二1·不失一般性，可EitL。设tik一大干二＞，E是到Ah对应的本…