硅单粒子位移损伤多尺度模拟研究

本文结合分子动力学方法和动力学蒙特卡罗方法, 研究了单个粒子入射硅引起的位移损伤缺陷的产生和演化过程; 基于Shockley-Read-Hall理论计算了单个粒子入射引起的位移损伤缺陷导致的泄漏电流增加及其演化过程, 比较了缺陷退火因子与泄漏电流退火因子之间的差异, 并将计算结果与实验值进行了对比. 结果表明, 计算泄漏电流时, 仅考虑一种缺陷的情况下缺陷退火因子与泄漏电流退火因子相同, 考虑两种缺陷类型情况下二者在数值上有所区别, 但缺陷退火因子仍能在一定程度上反映泄漏电流的退火行为. 分子动力学模拟中采用Stillinger-Weber势函数和Tersoff势函数时缺陷退火因子和泄漏电流退火因子与实验结果一致, 基于Stillinger-Weber势函数的计算结果与实验值更为接近.     

Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based blocked-impurity-band detectors

Recently, GaAs-based BIB detector has attracted a lot of attention in the area of THz photovoltaic detection due to potential application values in security check and drug inspection. However, the physical mechanisms involving in carrier transition and transport are still unclear due to the poor material quality and immature processing technique. In this paper, the dark current and THz response characteristics have thus been numerically studied for GaAs-based blocked-impurity-band (BIB) detectors. The key parameters and physical models are constructed by simultaneously considering carrier freeze-out and impurity-band broadening effects. Roles of blocking layer and anode bias in processes of impurity-band transition and transport are intensively investigated, and the results can be well explained by numerical models. It is demonstrated that the effective electric field for the detector is only located in the absorbing layer, and can determine to a large extent the magnitude of the dark current and THz response. While the blocking layer not only can suppress dark current but also can attenuate responsivity due to its electric-field modulation effect.     

避雷器电阻片测试系统设计

采用工业PC机与可编程控制器、示波器、直流仪等设备设计了避雷器电阻片测试系统,阐述了本系统的控制流程及逻辑关系,用图形化编程语言编写了上位机软件,完成了避雷器电阻片在 U_1mA及0.75U_1mA下的漏电流等参数的测试,并对电阻片测试过程中的电压峰值、电流峰值进行采集存储,还存储了电阻片在整个测试过程中的能量,方便以后对测试过程中损坏的阀片进行能量、电流峰值、电压峰值方面的分析,对系统进行了初步的试验,结果表明该系统运行效果良好,实现了避雷器电阻片出厂前的测试,提高了测试效率。     

Fast multipole method for three-dimensional systems with periodic boundary condition in two directions

We derived a new expression for the electrostatic interaction of three-dimensional charge-neutral systems with two-dimensional periodic boundary conditions (slab geometry) using a fast multipole method (FMM). Contributions from all the image cells are expressed as a sum of real and reciprocal space terms, and a self-interaction term. The reciprocal space contribution consists of two parts: zero and nonzero terms of the absolute value of the reciprocal lattice vector. To test the new expressions, electrostatic interactions were calculated for a randomly placed charge distribution in a cubic box and liquid water produced by molecular dynamics calculation. The accuracy could be controlled by the degree of expansion of the FMM. In the present expression, the computational complexity of the electrostatic interaction of N-particle systems is order N, which is superior to that of the conventional two-dimensional periodic Ewald method for a slab geometry and the particle mesh Ewald method with a large empty space at an interface of the unit cell. © 2020 Wiley Periodicals, Inc.     

一个关于勒让德多项式的积分公式及其简单应用——圆形带电环和电流环的静态电磁势

给出了一个关于勒让德多项式的积分公式及其证明,用该公式和叠加法方便快捷地导出了圆形带电环和电流环的静态电磁势.     

GaN发光二极管表观电容极值分析

利用正向交流(ac)小信号方法对GaN发光二极管的电容-电压特性进行测量,可以观察到GaN发光二极管中的负电容现象。正向偏压越大,测试频率越低,负电容现象越明显。测量到的负电容现象是表象,不存在负电容;提出GaN发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。分析可变电容对正向交流小信号响应得到:特定参数的可变电容使结电容电流相位落后于交流小信号电压相位π/2,使得在测量中表现为负电容。发现表观电容-正向电压曲线的极值点与理论模型相吻合,证明了该理论模型的正确性。     

导出圆电流的磁感应强度的简便方法

避开繁琐的椭圆积分推导,用微积分导出了圆电流在空间各点的磁感应强度的定积分公式,再变换成用椭圆积分表示的精确解.     

光纤光栅对FBG-ECL静态特性的影响

光纤光栅外腔半导体激光器(FBG-ECL)在未来光通信系统占有着越来越重要的地位。根据FBG-ECL的等效腔模型,讨论了光纤光栅反射率、带宽对FBG-ECL的输出功率,阈值特性、边模抑制比等静态特性的影响。指出了存在最佳光纤光栅峰值反射率,不仅使得FBG-ECL具有更高的输出功率,而且可以获得极好的边模抑制比。最后根据实测在不同反射率下外腔激光器的激射光谱,发现理论分析结果和实验数据是吻合的。     

SQUID用于铍材残余应力检测的计算机模拟

依据SMM-601型超导量子干涉显微镜检测部分构建计算模型,采用电磁场有限元方法分析了残余应力引起的非磁性金属材料铍电导率变化对超导量子干涉仪(SQUID)检测信号的影响,并讨论了该方法实际应用于非磁性金属材料残余应力检测的条件和可能性。