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101.
102.
1 Introduction Inrecentyears,boththetheoreticalandexperimentalinvestigationsonlasercoolingandtrappinghavebecomeoneofthemajorfieldsinatomic,molecularandoptical physics[1~ 8] .Thedevelopmentoflasercoolingandtrappingtechnologyisimportantfortheapplicationssu… 相似文献
103.
L. Torrisi A.M. Mezzasalma J. Badziak J. Wolowski G. Franco 《Applied Surface Science》2006,252(24):8533-8538
High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438 nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230 J) and the short pulse duration (400 ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6 × 106 J/cm2, the maximum ion energy was about 600 keV and the maximum charge state was about 27+.In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5 MeV helium ions, Auger electron spectroscopy (AES) with 3 keV electron beam and 1 keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis. 相似文献
104.
Tony Donnelly 《Applied Surface Science》2006,252(13):4445-4448
Ultra-thin (0.5-5 nm) films of Ag have been prepared by pulsed laser deposition in vacuum using a 26 ns KrF excimer laser at 1 J cm−2. The deposition was controlled using a Langmuir ion probe and a quartz crystal thickness monitor. Transmission electron microscopy showed that the films are not continuous, but are structured on nanometer size scales. Optical absorption spectra showed the expected surface plasmon resonance feature, which shifted to longer wavelength and increased in strength as the equivalent film thickness was increased. It is shown that Maxwell Garnett effective medium theory can be used to calculate the main features of optical absorption spectra. 相似文献
105.
Growth characteristics and surface morphology of boron carbide films fabricated by ablating a B4C target in high vacuum with a traditional KrF excimer laser and a high brightness hybrid dye/excimer laser system emitting at the same wavelength while delivering 700 fs pulses are compared. The ultrashort pulse processing is highly effective. Energy densities between 0.25 and 2 J cm−2 result in apparent growth rates ranging from 0.017 to 0.085 nm/pulse. Ablation with nanosecond pulses of one order of magnitude higher energy densities yields smaller growth rates, the figures increase from 0.002 to 0.016 nm/pulse within the 2-14.3 J cm−2 fluence window. 2D thickness maps derived from variable angle spectroscopic ellipsometry reveal that, when ablating with sub-ps pulses, the spot size rather than the energy density determines both the deposition rate and the angular distribution of film material. Pulse shortening leads to significant improvement in surface morphology, as well. While droplets with number densities ranging from 1 × 104 to 7 × 104 mm−2 deteriorate the surface of the films deposited by the KrF excimer laser, sub-ps pulses produce practically droplet-free films. The absence of droplets has also a beneficial effect on the stoichiometry and homogeneity of the films fabricated by ultrashort pulses. 相似文献
106.
E. J. Prime J. Lassen T. Achtzehn D. Albers P. Bricault T. Cocolios M. Dombsky F. Labrecque J. P. Lavoie M. R. Pearson T. Stubbe N. Lecesne Ch. Geppert K. D. A. Wendt 《Hyperfine Interactions》2006,171(1-3):127-134
The range of isotopes available at the TRIUMF Isotope Separator Accelerator (ISAC) facility has been greatly enhanced by adding
a Resonance Ionization Laser Ion Source (RILIS). A large wavelength range is accessible with the fundamental, second and third
harmonic generation of titanium-sapphire laser light. In addition a dedicated laser is available for non-resonant laser ionization.
The first on-line beam 62Ga was delivered in Dec. 2004. In general RILIS improves the intensity, purity and emittance of ion beams. 62Ga and 26Al and Be beams have been delivered so far on-line.
This work was financed by TRIUMF which is federally funded via a contribution agreement through the National Research Council
of Canada. 相似文献
107.
We demonstrate the potential of femtosecond two-color pulse interferometry for in vitro optical glucose monitoring, by dispersion of the group refractive index in a glucose solution sample with respect to a red-color
light and a blue-color light. By comparison with femtosecond one-color pulse interferometry, the basic performance of the
present system with regard to sensitivity, quantitativeness, and tolerance to surrounding disturbances, is evaluated. The
resulting accuracy and precision of glucose determination are 77 and 118mg/dl for 10-mm-sample-thickness, respectively. This
near-common-path configuration of the two-color pulse light provides good stability to fluctuations of sample temperature,
which is important in clinical applications. Considering the performance of femtosecond two-color pulse interferometry as
an optical glucose sensor, a suitable measurement site for in vivo optical glucose monitoring is discussed. 相似文献
108.
通过对托卡马克中模拟积分器积分误差的分析,设计了一种由数字信号处理部件动态抑制这些误差的斩波式积分器,并在实验中获得了长时间、低漂移的积分效果。 相似文献
109.
用微分脉冲溶出伏安法研究了镍(11)与酸性铬兰K(ACBK)所生成的络合物在悬汞电极上的电化学特性及电化学反应机理,发现电极反应为镍与酸性铬兰K所生成的络合物吸附在电极表面后发生的不可逆还原。在HCl-硼砂介质中(pH8.67),络合物在-316mV处有一吸附还原峰,其峰电流与镍浓度在0.001~0.010μ/mL范围内呈现良好的线性关系,其最低检出浓度为0.0005μg/mL。 相似文献
110.