寡头垄断市场排污收费的政府调控模型

基于完全信息博弈理论,阐述了寡头垄断市场的排污收费古诺模型.建立了具有政府宏观调控机制的博弈模型,并对调控效果进行了分析.     

Laser spectroscopy of high spin isomers – a review

This review summarizes the experimental data on charge radii differences among ground state and high spin isomeric states determined by high-resolution laser spectroscopic methods. A comparison is presented between radii changes obtained from the isomeric shifts in the atomic spectra and from the quadrupole moments of both ground and isomeric states under the assumption that the radii changes are determined by the difference of the quadrupole deformations. Special attention is paid to isomers arising from the break-up of nucleon pairs and isomers of odd–odd nuclei. The characteristic features of the radii changes for isomeric states of different origin are discussed.     

The Nature of Electronic Charge

Advances in gauge theories and unified theories have not thrown light on the meaning of electron. The problem of the origin of electronic charge is made precise, new insights gained from Weyl space are summarized, and the origin of charge in terms of fractional spin is suggested. A new perspective on the abelian Chern-Simons theory is presented to explain charge.     

Recent radiochemical studies of the fission process

This article summarizes the recent radiochemical investigations on mass, charge kinetic energy and fragment angular distributions in low energy fission of actinides.     

表面传导电子发射显示器件电场分布的理论研究

利用电磁理论对表面传导电子发射显示器件的单个子像素在笛卡尔坐标系内建立合理的电学物理模型，对内部电场强度和电势进行了深入研究，推导出了模型不同部分的面电荷密度、电场强度和电势的表达式.为了形象地表征其电学特性，利用MATLAB 6.5对电场强度和电势的分布情况进行了模拟，从理论上对模拟曲面给出了合理的解释，分析了子像素内部电子的发射机理和电学行为，并与电子多重散射模型和惯性离心模型进行了对比，解释了SED阳极电流形成的重要原因.在误差允许的范围内，本模型有关电场强度分布的结论与惯性离心模型一致. 关键词： 表面传导电子发射显示 遂穿效应 面电荷密度 电场强度     

柱形分布的电荷产生的电势

将无限长线电荷看成二维平面上的一个“源”,利用电势叠加原理计算了无限长柱形均匀分布的电荷产生的电势.这些柱体的截面电荷分布包括可解析表示和不可求解表示两种,后者可以通过数值计算给出结果.因此这种方法实际上可以计算任意截面柱形电荷分布的电势.通过计算,展示了各种电荷分布所产生电场的特性和共同特征.     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

导体壳内外的电场彼此独立的简易证明

本文提供了一种证明导体壳的内外电场彼此独立的简易方法.     

Tunneling Radiation of a Torus-Like Black Hole in Anti-de Sitter Space-Time

An extension of the Parikh-Wilczek's semi-classical quantum tunneling method, the tunneling radiation of the charged particle from a torus-like black hole is investigated. Difference from the uncharged mass-less particle, the geodesics of the charged massive particle tunneling from the black hole is not light-like, but determined by the phase velocity. The derived result shows that the tunneling rate depends on the emitted particle's energy and electric charge, and takes the same functional form as uncharged particle. It proves also that the exact emission spectrum is not strictly pure thermal, but is consistent with the underlying unitary theory. PACS Numbers: 04.70.Dy, 97.60.Lf, 05.30.Ch.