Effects of disorder on propagation losses and cavity Q-factors in photonic crystal slabs

A theoretical model of disorder for the etched holes or pillars in a generic two-dimensional photonic crystal slab is presented. This model is employed to calculate the effects of size disorder on propagation losses in linear photonic crystal waveguides as well as on quality (Q)-factors in photonic crystal nano-cavities. The main results obtained by the present theory and shown in this work are: (a) large single-mode bandwidth and low-loss (<0.1 dB/mm) propagation of light is predicted for increased-width membrane-type photonic crystal waveguides, (b) pillar-based lattices show reduced sensitivity to size fluctuations than hole-based ones, (c) the effects of disorder on cavity Q-factors are quantitatively evaluated. An extension of the model is also introduced in order to take into account the side-wall micro-roughness of the perfectly vertical holes, and preliminary results of this more general approach are discussed.     

金纳米颗粒的紫外、蓝紫光波段光致荧光特性

采用电化学方法制备出粒径在20～30 nm的悬浮胶体金纳米颗粒。研究了金纳米颗粒的荧光发射光谱特性。在377和459 nm观察到两个荧光发射峰,分别位于紫外和蓝紫光波段,对应的敏感激发波长为220 nm。减小激发光强度或降低金纳米颗粒的粒子数密度都会使377 nm处的荧光发射峰强度减弱。位于459 nm处的荧光发射峰对激发光强度和颗粒数密度变化更为敏感,并且在激发光强度降低到一定阈值或粒子数密度高于一定阈值后消失。随着激发光强度的增加,位于377和459 nm处的两发射峰强度逐渐靠近,其比值逼近于1。实验结果与随机分布介质的自组织散射式谐振腔理论符合得较好。这表明胶体金纳米颗粒中存在循环多重散射,并由此引发了蓝光及紫外波段的荧光增强,这在光存储和全色显示等方面具有潜在的应用前景。     

Cavity modes in one-dimensional photonic crystal slabs

A theoretical study of cavity modes in one-dimensional photonic crystal slabs embedded in Silicon-on-Insulator structures is reported. Three different methods are employed, namely a guided-mode expansion in which the coupling to radiative modes is treated by perturbation theory, a grating or scattering-matrix method for calculating the surface reflectance, and a Fourier modal expansion for in-plane transmission calculations. It is shown that all methods lead to the same values for the quality factors of cavity modes for both first- and second-order Bragg mirrors. We conclude that the quality factor of a cavity mode can be determined with optical reflectance from the surface of the slab.     

Generation of entangled coherent states through cavity-assisted interaction

We propose schemes to generate an n-coherent-pulse GHZ state and a cluster state via the interaction between n coherent pulses and a two-sided cavity.In these schemes,a strong coupling condition is not needed,which makes the protocols possibly able to be implemented based on the current experiment technology.     

Tunable two-axis spin model and spin squeezing in two cavities

Multi-mode cavities have now attracted much attention both experimentally and theoretically. In this paper, inspired by recent experiments of cavity-assisted Raman transitions, we realize a two-axis spin Hamiltonian H = q(J_x~2+ χJ_y~2) + ω_0J_z in two cavities. This realized Hamiltonian has a distinct property that all parameters can be tuned independently. For proper parameters, the well-studied one- and two-axis twisting Hamiltonians are recovered, and the scaling of N~(-1) of the maximal squeezing factor can occur naturally. On the other hand, in the two-axis twisting Hamiltonian, spin squeezing is usually reduced when increasing the atomic resonant frequency ω_0. Surprisingly, we find that by combining with the dimensionless parameter χ(-1), this atomic resonant frequency ω_0 can enhance spin squeezing greatly. These results are beneficial for achieving the required spin squeezing in experiments.     

Spontaneous decay of an excited atom placed near a rectangular plate

Using the Born expansion of the Green tensor, we consider the spontaneous decay rate of an excited atom placed in the vicinity of a rectangular plate. We discuss the limitations of the commonly used simplifying assumption that the plate extends to infinity in the lateral directions and examine the effects of the atomic dipole moment orientation, atomic position, and plate boundary and thickness on the atomic decay rate. In particular, it is shown that due to the plate finite size, the spontaneous decay may be inhibited even when the atom is situated very close to the surface, and that in the boundary region, the spontaneous decay rate can be strongly modified.     

Aqueous flat-cells perpendicular to the electric field for use in electron paramagnetic resonance spectroscopy, II: design

This paper builds on the work of Mett and Hyde [J. Magn. Reson. 165 (2003) 137]. Various aqueous flat-cell geometries in the perpendicular orientation have been studied using Ansoft High Frequency Structure Simulator (version 9.0, Pittsburgh, PA) and Computer Simulation Technology Microwave Studio (version 5.0, Wellesley Hills, MA). The analytic theory of Mett and Hyde has been refined to predict optimum dimensions of multiple sample cell structures including the effect of the sample holder dielectric properties and the interaction of the cells with each other on EPR signal strength. From these calculations and simulations we propose a practical multiple cell sample structure for use in commercial rectangular TE102 cavities that yields 2.0-2.3 times higher sensitivity relative to a single flat-cell in the nodal orientation. We also describe a modified TE102 resonator design with square rather than cylindrical sample-access stacks that is predicted to give a factor of 2.2-2.7 enhancement in EPR signal strength of a single flat-cell in the nodal orientation. These signal enhancements are predicted with sample holders fabricated from polytetrafluoroethylene. Additional improvement in EPR signal of up to 75% can be achieved by using sample holder materials with lower dielectric constants.     

空间电荷主导电子束的纵向聚焦设计

在空间电荷主导电子束研究中,纵向聚焦非常重要,在输运过程中由于强空间电荷力的影响,束团将很快变长并崩溃,马里兰大学的电子环设计用于方形束团和抛物线形束团的研究,环中需要用三个感应腔对束团进行纵向聚焦.文中首先介绍了方形束团和抛物线形束团的纵向束流动力学,推导了两种束团纵向聚焦所需要的5MHz重复率高压脉冲波形,并给出了实现纵向聚焦的感应腔设计及其特殊要求.     

Surface cavities produced by high‐dose nitrogen ion implantation into silicon

Nitrogen ion implantation (24 keV, 4.6 × 10¹⁷ cm^?2) into (100) a p‐type silicon wafer material and a subsequent electron beam annealing at 1100 °C for 15 s under high vacuum conditions leads to the formation of an uneven surface in the implanted region caused by nitrogen bubbles beneath the surface. Annealing at 1200 °C for 300 s results in surface cavities with a mean diameter of 350 nm and a surface coverage of 3–4% and an average depth of ～60 nm. Nuclear reaction analysis reveals that the nitrogen concentration in the as‐implanted state exceeds 57 at%, the value of stoichiometric Si₃N₄. Annealing at 1100 °C for 15 s slightly reduces the nitrogen peak concentration, whereas annealing at 1200 °C for 300 s induces a significant alteration to the shape of the nitrogen depth profile coupled with the lowering of the concentration close to the stoichiometry of Si₃N₄. The results present a new method of producing sub‐micrometre cavities embedded in a thin silicon nitride film on wafer silicon which may lead to novel micro‐electronic and biotechnology applications. Copyright © 2007 John Wiley & Sons, Ltd.