ZnSe:Co—nonlinear optical absorber for giant-pulse eye-safe lasers

ZnSe:Co²⁺ crystals were grown by the Bridgeman technique. Optical absorption measurements showed non-uniform distribution of Co²⁺ ions along the as-grown crystals. Using Pfann formula the distribution coefficient of Co²⁺ ions between crystal and melt was estimated to be 0.5. Transmission dependence on laser power at λ=1535 nm was investigated for different Co²⁺ ions concentration. Maximal final transmission was found for ZnSe samples containing 1.6×10¹⁹ cm⁻³ of Co²⁺ ions. Obtained ZnSe:Co²⁺ samples were used as saturable absorbers to generate giant-pulse eye-safe laser radiation. KIGRE QE-7S rod placed in resonator cavity was used as active element.     

Physical properties of ZnSe thin films: Air and vacuum annealing evolution to buffer layer applications

In order to develop high efficiency solar cell device by replacing conventional hazardous CdS window layer by environmental friendly Zn-based buffer layer, ZnSe thin films of thickness 100 nm were grown on glass and ITO substrates employing electron beam evaporation technique followed by air and vacuum annealing at temperature 100 °C, 200 °C and 300 °C. As-grown and annealed films were subjected to characterization tools like XRD, UV-Vis spectrophotometer, SEM, EDS and source meter. Structural results reveal the amorphous phase, SEM images indicate uniform deposition without pin holes and EDS patterns confirm the deposition. Transmittance is observed to be high in visible region and band gap is found to change with temperature of the treatment and I-V measurements demonstrate ohmic nature. On the basis of optimized results, the films annealed at 200 °C in vacuum may be used as buffer layer to develop high efficiency Cd-based and CIGS thin film solar cells.     

ZnSe/ZnS 核壳结构量子点的制备与表征

采用外延生长法在低于 ZnS 晶体成核温度(120 ℃)的条件下,通过在ZnSe 量子点表面生长 ZnS,制备出结晶良好的 ZnSe/ZnS 核壳型量子点.通过 X 射线衍射(XRD),透射电镜分析(TEM)证实了核壳结构的生成.通过荧光光谱和紫外-可见光吸收光谱分析证实,核壳结构的形成改善了 ZnSe 量子点的荧光特性.通过改变反应温度、反应时间、反应物的用量等实验参数,可得到不同厚度ZnS壳层包覆的核壳型量子点.所制备的ZnSe/ZnS量子点具有良好的水溶性,可以分散形成稳定、澄清的水溶液.在紫外灯的照射下,溶液呈现明亮的蓝绿色荧光.     

ZnSe体单晶THz波段时域光谱测量及分析

利用透射型THz时域光谱技术,对ZnSe(110)体单晶在THz波段的色散和吸收性质进行了测量和分析。根据Drude理论获得了ZnSe体单晶的静电介电常数及高频介电常数,并观察到ZnSe体单晶在THz波段的多声子吸收效应。     

Ag∶InP/ZnSe纳米晶的合成与生物成像

采用高温热注入法, 以P[N(CH3)2]3为磷源合成了具有近红外荧光的Ag∶InP/ZnSe纳米晶. 采用紫外|可见|近红外吸收光谱(UV|Vis|NIR)、 荧光光谱、 透射电子显微镜(TEM)、 X 射线衍射(XRD)等对产物的结构和光学性质进行了表征, 并分析了Ag掺杂浓度和温度对InP纳米晶荧光性能的影响. 通过调节Ag掺杂浓度和反应温度, 发现当Ag掺杂量为6%, 反应温度为200 ℃时, Ag∶InP纳米晶的发光效率最高. 将制备的Ag∶InP的表面包覆ZnSe, 粒子的荧光效率从原来的20%提高到45%. 将具有近红外荧光的Ag∶InP/ZnSe纳米晶应用于细胞成像, 结果表明制备的荧光纳米晶在细胞成像中清晰可见且毒性较低.     

ZnSe弹性常数和相变的从头计算

利用平面波密度泛函理论研究了ZnSe从闪锌矿结构到盐石结构的相变.结果发现通过H相等得到的相变压力为16.8 GPa,与通过高压弹性常数值判断所得到的结果相符.     

超晶格的理论研究

本文用半经验紧束缚法研究了(ZnSe)_n/(Ge)_(2m)(100)超晶格,计算了其能隙随层厚的变化,其结果能说明超晶格体系的准二维特性,表明(7,7)超晶格已足以模拟异质界面问题,并指出(ZnSe)_n/(Ge)_(2m)(100)超晶格的禁带中很可能存在界面态。     

基于MEH-PPV/ZnSe纳米复合器件的电致发光特性的研究

以巯基乙酸作为稳定剂在水相中制备了ZnSe纳米晶,用X射线粉末衍射(XRD)和X射线光电子能谱(XPS)对其进行了表征。用表面活性剂将ZnSe纳米晶从水相中转移到有机相中,使其与聚合物MEH-PPV复合作为发光层,制备了多层电致发光器件Glass/ITO/MEH-PPV∶ZnSe/BCP/Alq₃。对ZnSe纳米晶和MEH-PPV薄膜的光致发光谱及其吸收光谱的比较表明ZnSe纳米晶和MEH-PPV之间存在着能量传递,这是导致纳米复合薄膜的光致发光光谱和电致发光光谱存在差异的原因之一。文章对其在光激发和载流子注入条件下的不同发光机制进行了讨论。通过对器件的光电特性进行研究,发现ZnSe纳米晶发光的比例随着外加电压的增加而增加,而且器件的I-V特性基本上符合二极管的特性。