应变层异质结ZnS/ZnSe、ZnS/ZnS_xSe_(1-x)和ZnSe/ZnS_xSe_(1-x)价带带阶的研究

采用基于原子球近似下线性Ｍｕｆｉｎ－Ｔｉｎ轨道（ＬＭＴＯ－ＡＳＡ）的平均键能计算方法，研究了以ＺｎＳｘＳｅ１－ｘ为衬底，沿（００１）方向外延生长的应变层异质结ＺｎＳ／ＺｎＳｅ、ＺｎＳ／ＺｎＳｘＳｅ１－ｘ和ＺｎＳｅ／ＺｎＳｘＳｅ１－ｘ的价带带阶值ΔＥｖ（ｘ）．研究表明，ΔＥｖ（ｘ）值随衬底合金组分ｘ单调变化．且两者的关系是非线性的．在此计算结果与其它理论计算和实验结果符合较好．     

高性能DF化学激光三色分束器

本文表述ＤＦ高能激光应用光学系统中作为共孔径分光元件而研制的三色分束器的光学性能，讨论了满足分光性能光学元件基片，镀膜材料选取，多层膜设计与制备技术，元件性能测试结果。得到在ＺｎＳｅ基片背面未镀膜情况下三色分光膜性能：３．８μｍ波长带反射率大于９９．６％，８～１４μｍ红外波段透过率大于７５％，可见光区０．６４～０．９２μｍ透过率大于５０％，膜层通过了稳定性检验。     

氧化石墨烯/硒化锌纳米光电材料的制备及其蓝光发射特性

采用一种简单有效的原位水热合成方法,使用石墨烯氧化物（GO）作为反应物和晶体生长基底成功制备出了还原氧化石墨烯/硒化锌（r-GO/ZnSe）纳米复合材料。采用X射线粉末衍射（XRD）、透射电子显微镜（TEM）、高分辨透射电镜（HRTEM）以及红外-可见光谱（FT-IR）等方法对r-GO/ZnSe纳米复合材料进行了检测。结果表明,平均粒径在30 nm的立方闪锌矿晶体结构的ZnSe粒子均匀分散在氧化石墨烯片层上,构成纳米复合结构。 UV-Vis光谱显示,纳米复合材料的光学吸收的起始波长在445 nm附近。PL光谱显示,纳米复合材料在470 nm附近存在一个很强的发射峰。这种石墨烯基纳米复合材料在白光二极管领域中有重要的应用价值。     

基于ZnSe/Ag/ZnSe可见区透明导电薄膜

利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020 cm－3,电子迁移率和电阻率分别为17.22 cm2 V－1 s－1和2.867×10－5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.     

中波红外激光技术最新进展

3～5μm中红外波段激光源是近年来备受国内外关注的研究热点,本文综合评述了产生中红外波段激光的5种主要方法（CO2激光倍频技术、泛频CO激光技术、光学参量振荡器、氟化氘激光器、Fe2＋∶ZnSe固体激光技术）的国内外发展现状,总结分析了各种方法的关键技术和存在的问题,指出了该技术的未来发展趋势。     

High-pressure calculations of the elastic properties of ZnSx Se 1−x alloy in the virtual-crystal approximation

We report first-principles calculation results on the structural and elastic properties of ZnS _x Se_1?x alloy. The calculations done using density functional theory within the local density approximation and employing the virtual-crystal approximation. It is found that the lattice parameter, the phase transition pressure, and the elastic constants (and their derivative with respect to the pressure) follow a quadratic law in x.     

CdSe/ZnSe/ZnS量子点在单晶太阳能电池中的应用

将CdSe/ZnSe/ZnS量子点掺入到聚甲基丙烯酸甲酯(PMMA)中,研究了量子点的发光下转移特性。将420 nm长波滤光片盖在单晶电池上,使电池对300~420 nm波段光谱响应几乎为零,同时排除下转移层抗反射效应的影响,再在滤光片表面制备下转移层,观察到了外量子效率(EQE)值的提升,说明所用量子点可以应用于对300~420 nm波段光谱响应几乎为零的电池上实现频率的下转移,提高EQE。对量子点在太阳能电池中应用的可能性进行了分析,并根据本实验中测得电池的EQE数据,计算了该电池获得提升所需量子点最低的整体荧光量子效率值为87.8%。     

Saturable absorbers for passive Q-switching of erbium lasers emitting in the region of 3 μm

The phototropic properties of Fe:ZnSe, Co:ZnSe, and Co:ZnS single crystals have been investigated. It is shown that these crystals can be used to advantage as the saturable absorbers in solid-state erbium lasers emitting in the region of the 3-μm range. The absorption cross sections of the ground states of the Co²⁺ ion in the ZnSe (σ_GSA = 11·10⁻²⁰ cm²) and ZnS (σ_GSA = 5.6·10⁻²⁰ cm²) crystals and of the Fe²⁺ ion in the ZnSe (σ_GSA = 50·10⁻²⁰ cm²) crystal at λ = 2.79 μm were determined experimentally. It has been established that the above-indicated crystals in the excited state absorb light weakly. The use of these crystals as passive Q switches made it possible to realize, for the first time, the regime of Q-switching of a Cr,Er:YSGG laser emitting at a wavelength of 2.79 μm. Single pulses with an energy of 60 mJ and a duration of 170 nsec were obtained in the regime of passive Q-switching. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 747–751, November–December, 2005.     

Structural, optical properties and VCNR mechanisms in vacuum evaporated iodine doped ZnSe thin films

Iodine doped ZnSe thin films were prepared onto uncoated and aluminium (Al) coated glass substrates using vacuum evaporation technique under a vacuum of 3 × 10⁻⁵ Torr. The composition, structural, optical and electrical properties of the deposited films were analyzed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and study of I-V characteristics, respectively. In the RBS analysis, the composition of the deposited film is calculated as ZnSeI_0.003. The X-ray diffractograms reveals the cubic structure of the film oriented along (1 1 1) direction. The structural parameters such as crystallite size, strain and dislocation density values are calculated as 32.98 nm, 1.193 × 10⁻³ lin⁻² m⁻⁴ and 9.55 × 10¹⁴ lin/m², respectively. Spectroscopic ellipsometric (SE) measurements were also presented for the prepared iodine doped ZnSe thin films. The optical band gap value of the deposited films was calculated as 2.681 eV by using the optical transmittance measurements and the results are discussed. In the electrical studies, the deposited films exhibit the VCNR conduction mechanism. The iodine doped ZnSe films show the non-linear I-V characteristics and switching phenomena.     

Ultrasensitive and Selective Detection of Cd(II) Using ZnSe‐Xanthan Gum Complex/CNT Modified Electrodes

This work describes for the first time the employment of water soluble GSH‐ZnSe QDs stabilized by XG and MWCNT for electrode modification in the detection of Cd ions in a highly sensitive and selective manner resulting from the unique structure and surface chemistry of the used QDs. The surface of a glassy carbon (GC) electrode was modified through casting a thin layer of multiwalled carbon nanotubes (MWCNT) followed by a complex layer of ZnSe quantum dots (QDs) stabilized by xanthan gum (XG). Due to the electrocatalytic properties of MWCNT and electroanalytical performance of ZnSe‐XG complex, the new modified electrode significantly improves the sensitivity and selectivity of Cd(II) detection and exhibits enhanced performance in comparison to bare GC, ZnSe/GC and ZnSe/MWCNT/GC electrodes. Strong interactions between ZnSe QDs and XG resulting from hydrogen bonding and complexing association led to stabilization of ZnSe QDs and higher affinity towards Cd(II) ions adsorption compared to a ZnSe QDs film alone. The modified electrode showed linear response in a wide concentration range from 100 nM to 5 μM (R²=0.9967) along with a high sensitivity of 156.6 nA ⋅ mol⁻¹ ⋅ L⁻¹ and a low detection limit of 20 nM. The electrode shows high selectivity to Cd with negligible interference from other metal ions and salts.