Thermal diffusivity measurements in porous ceramics by photothermal methods

Received: 16 September 1996/Accepted: 6 January 1997     

Assignment of conformation-sensitive near-infrared bands in high-spin ferrous haemoproteins. Low-temperature magnetic circular dichroism data

An assignment of the near-infrared bands in the 600–800 nm spectral region observed in magnetic circular dichroism (MCD) spectra of high-spin ferrous haemoproteins is presented. The assignment is based on a relative energy level scheme for iron d-electrons, a comparison of predicted and measured temperature dependences of MCD intensity, a sign of MCD bands and a group theoretical analysis of allowed transitions. The proposed assignment is consistent with the ∼15-nm red shift of the ∼760 nm band on breakage of the Fe-His bond in deoxy-myoglobin at low pH, with low-temperature photolysis experiments available for CO complexes of several haemoproteins. In accordance with the observations, the intensity of the MCD bands for proteins with a sulphur anion of cysteine as proximal haemligand (cytochrome P450 and chloroperoxidase) is predicted to be diminished by at least one order of magnitude compared to that for proteins with an imidazole of a histidine as a protein-derived haemligand (i.e. myoglobin, haemoglobin and horseradish peroxidase). Received: 4 February 1997 / Accepted: 1 May 1997     

Poincaré’s inequalities and Talagrand’s concentration phenomenon for the exponential distribution

Summary. We present a simple proof, based on modified logarithmic Sobolev inequalities, of Talagrand’s concentration inequality for the exponential distribution. We actually observe that every measure satisfying a Poincaré inequality shares the same concentration phenomenon. We also discuss exponential integrability under Poincaré inequalities and its consequence to sharp diameter upper bounds on spectral gaps. Received: 10 June 1996 / In revised form: 9 August 1996     

Bouquet and join theorems for disentanglements

The disentanglement of certain augmentations is shown to be the topological join of a disentanglement and a Milnor fibre. The kth disentanglement of a finite map is defined and for corank 1 maps from ℂ ⁿ to ℂ ^{n +1} it is shown that they are homotopically equivalent to a wedge of spheres. Applications to the Mond conjecture are given. Oblatum 24-VII-2000 & 5-VII-2001?Published online: 12 October 2001     

The Jacobian and the Ginzburg-Landau energy

We study the Ginzburg-Landau functional for , where U is a bounded, open subset of . We show that if a sequence of functions satisfies , then their Jacobians are precompact in the dual of for every . Moreover, any limiting measure is a sum of point masses. We also characterize the -limit of the functionals , in terms of the function space B2V introduced by the authors in [16,17]: we show that I(u) is finite if and only if , and for is equal to the total variation of the Jacobian measure Ju. When the domain U has dimension greater than two, we prove if then the Jacobians are again precompact in for all , and moreover we show that any limiting measure must be integer multiplicity rectifiable. We also show that the total variation of the Jacobian measure is a lower bound for the limit of the Ginzburg-Landau functional. Received: 15 December 2000 / Accepted: 23 January 2001 / Published online: 25 June 2001     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Dynamic scanning force microscopy study of self-assembled DNA-protein nanostructures

Self-assembled oligomeric nanostructures consisting of bisbiotinylated DNA fragments connected by the protein streptavidin (STV) are studied by dynamic scanning force microscopy (SFM) operating in air. A comparison of the images taken in repulsive and attractive regimes is systematically made on DNA and STV structures. Stable and reproducible SFM images are obtained in the attractive regime by using a special feedback circuit, called Q-control. On the other hand, when SFM is operating in the repulsive regime, deformation of the structures that reduce the resolution and the image quality are clearly observable. The heights of both DNA and STV have been measured as a function of the tip/molecule interaction forces. This study offers the possibility to suggest a different mechanical behavior of DNA with respect to STV. Received: 24 July 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

First-principles studies of kinetics in epitaxial growth of III–V semiconductors

We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs (001), a growth model is presented that builds on results of DFT calculations for molecular processes on the β2-reconstructed GaAs (001) surface, including adsorption, desorption, surface diffusion, and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As₂ in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As₂ molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs (001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular, we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing down of material transport from the substrate towards the island, and thus helps to achieve more homogeneous island sizes. Received: 2 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002     

磁拱的运动学无力场

本文首先推导了完全导电流体内运动学磁拱无力场的基本方程，接着考虑了静态解和不定常相似性解．