Site segregation in size-mismatched nanoalloys: Application to Cu-Ag

In order to determine the energetic driving forces for surface segregation in bimetallic clusters, we use a combined approach coupling numerical simulations within an N-body interatomic potential and a lattice-gas model. This approach, which has been used successfully to study both the superficial segregation in semi-infinite alloys and the intergranular segregation, allows us to determine the relative contributions of the three elementary driving forces for the different sites of the cluster surface (vertices, edges and facets) in both dilute limits for the Cu-Ag system. We show that the segregation hierarchy based on broken-bond arguments (preferential segregation to the vertex sites, less to edge sites, and least to facet sites) is not at all universal. In particular, unusual hierarchies are predicted when the sizes of the constituents are strongly different. Furthermore, we compare the segregation driving forces for cubo-octahedral and icosahedral clusters. They are similar for the vertex sites and edge sites, whereas they differ significantly for the sites of the triangular facets. The segregation of the species with the largest atomic radius (Ag) is indeed largely enhanced in the icosahedral structure due to dilations of the orthoradial distances.     

Derived Lengths of Solvable Groups Having Five Irreducible Character Degrees II

Let G be a solvable group with five character degrees. Suppose that there is some prime p so that G/O ^p (G) is not Abelian. Also, assume that cd(G) contains a degree that is not divisible by p. Under these hypotheses, we show that the derived length of G is at most 4.     

Cyclic cohomology and algebra extensions

We construct a spectral sequence to study cyclic cohomology for an extension A = R/I of algebras. When R is a free algebra we describe the cyclic cohomology of A in terms of traces defined on R or powers of I. Explicit cyclic cocycles representing the cyclic cohomology class belonging to the trace are constructed as analogues of Chern character and Chern-Simons forms.Dedicated to Alexander Grothendieck     

Surface free energy of CrNx films deposited using closed field unbalanced magnetron sputtering

CrN_x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN_x films at temperatures in the range 20-170 °C. In this study CrN_x thin films with CrN, Cr(N), Cr₂N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr⁺² emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN_x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN_x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr₂N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN_x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness.     

Laser ablation lithography on thermoelectric semiconductor

In this paper, experimental results of the investigation of the periodic structure on thermoelectric semiconductor Cu₂Se are presented. Periodic structures were formed on surfaces of semiconductors due to multi-beam interaction of Q-switched Nd:YAG laser, which was operated in the lowest order of Gaussian mode and pulse duration 7 ns. Surface temperature evolution and transient reflectivity are studied during laser treatment. Creation of Cu islands in the maximal intensity of interference pattern was found.     

Continuous peeling extrusion of SEBS block copolymers

During continuous peeling, a central polymer rod free of visible defects was continuously extruded while being peeled at the die exit. Continuous peeling can occur at flow rates orders of magnitude higher than those at which initial surface cracking is observed. Thus, if continuous peeling can be controlled it may have potential industrial applications. The aim of this work was to study how different extrusion parameters (temperature, flow rate, die length and diameter) affect the presence of continuous peeling. The melt exiting the die has been filmed to link physical measurements and observations and to determine whether or not continuous peeling is present. Different criteria have been considered to represent the extrusion conditions under which continuous peeling may occur. Surface tension criteria can be used to try to predict the appearance and disappearance of continuous peeling. A correlation formula is also proposed for the rod diameter in terms of surface tension. Our results show that the ratio of the rod diameter to the die diameter is approximately 25% greater in the case of short-orifice dies (L/D ≈ 0) than for long capillaries (L/D ≈ 10). The correlations obtained allow analysis and discussion of flow regimes for possible applications.     

Validation of an optimization procedure to improve low frequency characteristics of rooms

A set of experiments was carried out to validate an optimization procedure based on finite element method (FEM). The idea of the procedure, fully presented in previous edition of this journal [Zhu X, Zhu Z, Cheng J. Using optimized surface modifications to improve low frequency response in a room. Appl Acoust 2004;65:841-60], is to produce an optimal geometry modification on the wall for improving low frequency sound uniformity in small rooms. Four experimental models were set up with a scale of 1:5. One was modified according to the optimized result and the others were treated with no optimization consideration. Measured frequency responses of four rooms were compared with numerical results calculated by FEM models. The transient responses in these rooms were also measured and analyzed. The agreements between calculation and measurement are satisfactory though the discrepancies due to the uncertainty of acoustic behavior of the room boundaries remain. The optimization procedure has been supported by the results that the optimized room produces the flattest frequency response and also the most smooth energy decay within the frequency range studied. The reductions of response fluctuation have reached 4.3 dB for prediction and 2.6 dB for measurement, respectively.     

Solved and unsolved problems in surface structure determination

The range of surface structural problems of interest in understanding the physics and chemistry of solid surfaces is reviewed with reference to the available methods and their strengths and limitations. Key challenges being addressed currently concern the achievable precision of measurements and their physical and chemical significance, and the complexity of the problems which may be solved. Past progress and future problems are illustrated with a series of examples ranging from the relaxation of simple clean metal surfaces through complex semiconductor reconstructions to large molecular adsorption and coadsorption systems and complex adsorbate-induced reconstructions. The strengths and limitations of scanning tunnelling microscopy as a complement to true quantitative structural methods are discussed, as is the role of chemical state specificity and elemental specificity in solving complex molecular adsorbate systems.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

The number of ideals in a quadratic field

LetK be a quadratic Geld, and letR(N) be the number of integer ideals inK with norm at most AT. Letx with conductork be the quadratic character associated withK. Then |R(N)−NL(1,x)|⩽Bk ^50/73 N ^23/73(logN)^461/146 forN ≥Ak, whereA andB are constants. ForN ≥Ak ^c,C sufficiently large, the factork ^50/73 may be replaced by (d(k))^4/73 k ^46/73. Dedicated to the memory of Professor K G Ramanathan