Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

Carbon nitride (CNx) thin films have been grown on Si 〈1 0 0〉 by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N₂ plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C⁺ ions, C atoms, C₂, N₂; and CN radicals, and N₂⁺ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the “four-probe-test method” determining sheet resistivity and correlating surface conductivity with chemical composition.     

Transparent titania nanotubes of micrometer length prepared by anodization of titanium thin film deposited on ITO

Transparent TiO₂ nanotube arrays of micrometer lengths were prepared by anodization of titanium thin film RF sputtered on indium tin oxide (ITO) which was coated on glass substrate. The sputtering process took place at elevated temperature of 500 °C. The structures of the films were studied using scanning electron microscopy (SEM) and X-ray diffraction (XRD) while the optical properties of the films were investigated using UV-visible spectroscopy. Two types of electrolytes were used in this work: an aqueous mixture of acetic acid and HF solution and a mixture of NH₄F and water dissolved in ethylene glycol. The concentration of NH₄F, voltage and the thickness of the sputtered titanium film were varied to study their effect on the formation of TiO₂ nanotube arrays. It is demonstrated in this work that the nanoporous layer is formed on top of the ordered array of TiO₂ nanotubes. Furthermore, the optical transmittance of TiO₂ nanotubes annealed at 450 °C is much lower than the non annealed TiO₂ nanotubes in the visible wavelength region.     

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.     

The ferroelectric and ferromagnetic characterization of CoFe2O4/Pb(Mg1/3Nb2/3)O3-PbTiO3 multilayered thin films

The multiferroic (PMN-PT/CFO)_n (n = 1,2) multilayered thin films have been prepared on SiO₂/Si(1 0 0) substrate with LNO as buffer layer via a rf magnetron sputtering method. The structure and surface morphology of multilayered thin films were determined by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. The smooth, dense and crack-free surface shows the excellent crystal quality with root-mean-square (RMS) roughness only 2.9 nm, and average grain size of CFO thin films on the surface is about 44 nm. The influence of the thin films thickness size, periodicity n and crystallite orientation on their properties including ferroelectric, ferromagnetic properties in the (PMN-PT/CFO)_n multilayered thin films were investigated. For multilayered thin films with n = 1 and n = 2, the remanent polarization Pr are 17.9 μC/cm² and 9.9 μC/cm²; the coercivity H_c are 1044 Oe and 660 Oe, respectively. In addition, the relative mechanism are also discussed.     

Quantitative T(1)(ρ) imaging using phase cycling for B0 and B1 field inhomogeneity compensation

T_1ρ imaging is useful in a number of clinical applications. T_1ρ preparation methods, however, are sensitive to non-uniformities of the B₀ magnetic field and the B₁ RF field. These common system imperfections can result in image artifacts and quantification errors in T_1ρ imaging. We report on a phase-cycling method which can eliminate B₁ RF inhomogeneity effects in T_1ρ imaging. This method does not only correct for image artifacts but also for T_2ρ contamination caused by B₁ RF inhomogeneity. The presence of B₀ magnetic field inhomogeneity can compromise the effectiveness of this method for B₁ RF inhomogeneity correction. We demonstrate that, by combining the spin-locking scheme reported by Dixon et al. (Myocardial suppression in vivo by spin locking with composite pulses. Magn Reson Med 1996; 36:90-94) with phase cycling, we can simultaneously correct B₀ magnetic field inhomogeneity effects and B₁ RF inhomogeneity effects in T_1ρ imaging. Phantom and in vivo data sets are used to demonstrate the proposed methods and to compare them with other existing T_1ρ preparation methods.     

梯度磁场中薄膜厚度梯度的形成机理

借助于基片下方放置的磁铁，在溅射的放电空间中引入了纵向的梯度磁场，辉光放电时，其外貌发生了显著的收缩，由此沉积的薄膜在平面内存在明显的厚度梯度，用磁场中带电粒子的运动理论解释了此种薄膜的形成机制。     

A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system

Wide band-gap BeZnO layers were grown on Al₂O₃ (0 0 0 1) substrate using radio-frequency magnetron co-sputtering. The rate of Be_xZn_1−xO crystallized as a hexagonal structure was x=0.2. From the X-ray photoelectron spectroscopy measurement, the O–Zn bonds relating the crystal structure and the Be–O bonds related to the deviation of the stoichiometry in the BeZnO layer were caught at 530.4 and 531.7 eV in the O 1s spectrum, respectively. Thus, the observance on the Be 1s peak of 113.2 eV associated with the bonding Be–O indicates that the sputtered Be atoms are substituted for the host-lattice site in ZnO. This Be–O bonding shows a relatively low intense and broadening spectrum caused by large fluctuation of Be content in the BeZnO layer. From the photoluminescence and transmittance measurement, the free exciton and the neutral donor-bound exciton (D⁰, X) emissions were observed at 3.7692 and 3.7313 eV, respectively, and an average transmittance rate over 95% was achieved in a wide ultraviolet (UV)–visible region. Also, the binding energy for the (D⁰, X) emission was extracted to be 37.9 meV. Through the wide band-gap material BeZnO, we may open some possibilities for fabricating a ZnO-based UV light-emitting diode to be utilized as a barrier layer comprised of the ZnO/BeZnO quantum well structure and/or an UV light emitting material itself.     

Emittance measurement & optimization for the photocathode RF gun with laser profile shaping

The Laser Undulator Compact X-ray source(LUCX) is a test bench for a compact high brightness X-ray generator,based on inverse Compton Scattering at KEK,which requires high intensity multi-bunch trains with low transverse emittance.A photocathode RF gun with emittance compensation solenoid is used as an electron source.Much endeavor has been made to increase the beam intensity in the multi-bunch trains.The cavity of the RF gun is tuned into an unbalanced field in order to reduce space charge effects,so that the field gradient on the cathode surface is relatively higher when the forward RF power into gun cavity is not high enough.A laser profile shaper is employed to convert the driving laser profile from Gaussian into uniform.In this research we seek to find the optimized operational conditions for the decrease of the transverse emittance.With the uniform driving laser and the unbalanced RF gun,the RMS transverse emittance of a 1 nC bunch has been improved effectively from 5.46 πmm.mrad to 3.66 πmm.mrad.     

First experimental research of the bunch compressor at CAEPLI

Magnetic bunch compressor is one of the key technologies on the path to next generation accelerator driven facilities. In this paper we report the design principles and the first experimental research of the bunch compressor developed at Chinese Academy of Engineering Physics (CAEP). The length of the bunch after compressor is found to be about 0.7 ps (rms) and the peak current exceeds 500 A when operated in the optimized condition. The sensitivity of the bunch length on the phase of the acceleration field and magnetic field of the bunch compressor was also measured and analyzed.     

ZnO纳米线的制备

利用磁控溅射技术在Si衬底上沉积的锌膜进行热氧化后,得到一维ZnO纳米线。