Light–matter coupling in nanostructures without an inversion center

A theoretical analysis of the electronic interaction with an intense electromagnetic field in a two-level asymmetrical quantum dot is presented. As a consequence of a strong light–matter coupling in such a system, dipole radiation at the Rabi frequency turns out to be possible. Since the Rabi frequency is controlled by the strength of the coupling electromagnetic field, the effect can serve to provide frequency-tuned parametric amplification and generation of electromagnetic waves. The manifestation of the effect is discussed for group III nitride quantum dots. Terahertz emission from arrays of such quantum dots is shown to be experimentally observable.     

One phonon resonant Raman scattering in a quantized spherical film

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with surface optical (SO) phonon modes in a semiconductor quantized spherical film. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study the selection rules for the processes. Singularities are found to be size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectrum. A discussion of the phonon behavior for the films with large and small size is presented. The numerical results are also compared with that of experiments.     

Numerical simulation of a coupling effect on electronic states in quantum dots

Lasers operating at 1.3 μm have attracted considerable attention owing to their potential to provide efficient light sources for next-generation high-speed communication systems. InAs/GaAs quantum dots (QDs) were pointed out as a reliable low-cost way to attain this goal. However, due to the lattice mismatch, the accumulation of strain by stacking the QDs can cause dislocations that significantly degrade the performance of the lasers. In order to reduce this strain, a promising method is the use of InAs QDs embedded in InGaAs layers. The capping of the QD layer with InGaAs is able to tune the emission toward longer and controllable wave-lengths between 1.1 and 1.5 μm. In this work, using the effective-mass envelope-function theory, we investigated theoretically the optical properties of coupled InAs/GaAs strained QDs based structures emitting around 1.33 μm. The calculation was performed by the resolution of the 3D Schrödinger equation. The energy levels of confined carriers and the optical transition energy have been investigated. The oscillator strengths of this transition have been studied with and without taking into account the strain effect in the calculations. The information derived from the present study shows that the InGaAs capping layer may have profound consequences as regards the performance of an InAs/GaAs QD based laser. Based on the present results, we hope that the present work make a contribution to experimental studies of InAs/GaAs QD based structures, namely the optoelectronic applications concerning infrared and mid-infrared spectral regions as well as the solar cells.     

Hydrogenic impurity in a quantum dot: Comparison between the variational and strong perturbation methods

A comparison is given between the variational and strong perturbation techniques. It has been shown that the variational method gives, in general, better results. Also, a new formulation is presented for the strong perturbation technique that depends on a simpler equivalent form of the perturbed part of the Hamiltonian. Moreover, common expressions which are valid for both treatments have been obtained. The results are applied to calculate the binding energy for a hydrogenic impurity placed in a finite confining potential spherical quantum dot in the states (1s), (2p) and (2s). The results obtained hitherto for a central impurity by using the strong perturbation technique are deduced in a much simpler way. As regards the off-central impurity some new expressions have been derived in both treatments. The numerical results for the two states (1s) and (2p) have also been investigated.     

Electron and hole states in a quantum ring grown by droplet epitaxy: Influence of the layer inside the ring opening

The electronic structure of the conduction and valence bands of a quantum ring containing a layer inside the ring opening is modeled. This structure (nanocup) consists of a GaAs nanodisk (the cup’s bottom) and a GaAs nanoring (the cup’s rim) which encircles the disk. The whole system is embedded in an (Al,Ga)As matrix, and its shape resembles realistic ring structures grown by the droplet epitaxy technique. The conduction-band states in the structure are modeled by the single-band effective-mass theory, while the 4-band Luttinger–Kohn model is adopted to compute the valence-band states. We analyze how the electronic structure of the nanocup evolves from the one of a quantum ring when the size of either the nanodisk or the nanoring is changed. For that purpose, (1) the width of the ring, (2) the disk radius, and (3) the disk height are separately varied. For dimensions typical for experimentally realized structures, we find that the electron wavefunctions are mainly localized inside the ring, even when the thickness of the inner layer is 90% of the ring thickness. These calculations indicate that topological phenomena, like the excitonic Aharonov–Bohm effect, are negligibly affected by the presence of the layer inside the ring.     

A new confinement potential in spherical quantum dots: Modified Gaussian potential

A new confinement potential for spherical quantum dots, called the modified Gaussian potential (MGP), is studied. In the present work, the following problems are investigated within the effective-mass approximation: (i) the one-electron energy spectra, (ii) wave functions, (iii) the problem of existence of a bound electron state, and (iv) the binding energy of center and off-center hydrogenic donor impurities. For zero angular momentum (l=0)$(l=0)$, the new confinement potential is sufficiently flexible to obtain analytically the spectral energy and wave functions. The results obtained from the present work show that (i) the new potential is suitable for predicting the spectral energy and wave functions, and (ii) the geometrical sizes of the quantum dot play the important roles on the energy levels, wave functions, the binding energy, and the existence of a bound electron state.     

Composition of the “GaAs” quantum dot,grown by droplet epitaxy

Self-assembled strain-free quantum dot (QD) structures were grown on AlGaAs surface by the droplet epitaxal method. The QDs were developed from pure Ga droplets under As pressure. The QDs were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both techniques show that the QDs are very uniform in size and their distribution on the surface is also homogeneous. The high resolution cross-sectional TEM investigation shows perfect lattice matching between the QD and the substrate, and also the faceting of the side walls of QD can be identified exactly by lattice planes. Analytical TEM (elemental mapping by EELS) unambiguously identifies the presence of Al in the QD.     

Spin transistor and quantum spin Hall-effects in CdBxF2−x–p-CdF2–CdBxF2−x sandwich nanostructures

Planar CdB_xF_2−x–p-CdF₂–CdB_xF_2−x sandwich nanostructures prepared on the surface of the n-type CdF₂ bulk crystal are studied to register the spin transistor and quantum spin Hall-effects. The current–voltage characteristics of the ultra-shallow p⁺–n junctions verify the CdF₂ gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF₂ quantum well confined by the CdB_xF_2−xδ-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdB_xF_2−xδ-barriers. The value of the superconductor energy gap, 2Δ = 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state, πΔ/e, at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall-effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.     

铈掺杂钆镓铝石榴石相玻璃陶瓷的光学及光谱参数

根据X射线衍射图谱对铈掺杂的钆镓铝石榴石相玻璃陶瓷的晶体结构进行分析,采用直径10英寸积分球结合CCD(charge coupled device)探测器系统,对蓝色半导体发光二极管激发下铈掺杂钆镓铝石榴石相玻璃陶瓷的荧光光谱进行测试,解析出样品发光的绝对光谱功率分布,推导出光量子数分布,求得荧光量子产率和组合白光的色坐标及其相关色温。结果表明,所调查的铈掺杂钆镓铝石榴石相玻璃陶瓷在蓝光LED激发下的荧光量子产率为29.2%,所获得组合白光的色坐标x=0.319,y=0.349,相关色温为6 086K。尽管该混晶陶瓷的荧光量子产率稍小于铈掺杂YAG玻璃陶瓷,但其与蓝光LED组合后发光的色温也明显低于后者,从而为舒适型LED照明玻璃陶瓷的进一步优化提供了新思路。