正常金属/超导/正常金属双垒隧道结中的量子相干输运

考虑到量子相干效应和界面散射效应 ,利用 L ambert理论模型 ,计算正常金属 /绝缘层 /超导 /绝缘层 /正常金属双垒隧道结中的准粒子输运系数和隧道谱。研究表明 :( 1)所有的准粒子输运系数和电导谱在超导能隙之上都随能量作周期性振荡 ,其振荡周期依赖于超导层的厚度 ;( 2 )在超导能隙之上 Andreev反射系数随能量呈现周期性消失现象 ;( 3)在绝缘层势垒强度取很大的隧道极限下 ,超导层中会形成一系列的准粒子束缚态 ,其位置由量子化条件决定 ;( 4)界面散射效应不仅能压低各子能隙电导峰 ,还能使子能隙电导峰劈裂为两个峰。     

Analysis of heterojunction resonant cavity-enhanced Schottky photodiodes by using two-valley transport model

The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors.     

Effect of Deborah number and phase difference on peristaltic transport of a third-order fluid in an asymmetric channel

The effect of a third-order fluid on the peristaltic transport in an asymmetric channel is studied. The wavelength of the peristaltic waves is assumed to be large compared to the varying channel width, whereas the wave amplitudes need not be small compared to the varying channel width. The channel asymmetry is produced by choosing the peristaltic wave train on the walls to have different amplitudes and phase. The flow is investigated in a wave frame of reference moving with velocity of the wave. The effects of Deborah number, phase difference, varying channel width and wave amplitudes on the pumping characteristics, streamline pattern and trapping phenomena are investigated. It is observed that the trapping regions increase as the channel becomes more and more symmetric and the trapped bolus volume decreases for increasing Deborah number, phase difference and varying channel width whereas it increases for increasing flow rate and wave amplitudes. Furthermore, the obtained results could also have applications to a range of peristaltic flows for a variety of non-Newtonian fluids such as aqueous solutions of high-molecular weight polyethylene oxide and polyacrylamide.     

On the local structure of doubly laced crystals

Let g be a Lie algebra all of whose regular subalgebras of rank 2 are type A₁×A₁, A₂, or C₂, and let B be a crystal graph corresponding to a representation of g. We explicitly describe the local structure of B, confirming a conjecture of Stembridge.     

非对称三态叠加多模泛函叠加态光场的高次压缩——广义电场分量的不等幂次和压缩效应研究

多模真空态|{0j}〉q与两个空间强度分布特征不同的多模复共轭泛函相干态|{f(j a)*(x,y,z)}〉q和|{f(j b)*(x,y,z)}〉q的线性叠加组成的三态叠加多模泛函叠加态光场|ψ(f3)〉q,利用多模压缩态理论,研究了态|ψ(f3)〉q中广义电场分量的不等幂次高次和(H)压缩特性.结果表明:在一定的条件下,态|ψ(f3)〉q的广义电场分量可呈现出周期性变化的任意奇数次和任意偶数次的不等幂次高次H压缩效应;光场的经典振幅和经典初始相位的任意非对称空间分布特征对其压缩程度和压缩深度等压缩特性将产生直接的影响.     

The Chemical Potential

The definition of the fundamental quantity, the chemical potential, is badly confused in the literature: there are at least three distinct definitions in various books and papers. While they all give the same result in the thermodynamic limit, major differences between them can occur for finite systems, in anomalous cases even for finite systems as large as a cm³. We resolve the situation by arguing that the chemical potential defined as the symbol μ conventionally appearing in the grand canonical density operator is the uniquely correct definition valid for all finite systems, the grand canonical ensemble being the only one of the various ensembles usually discussed (microcanonical, canonical, Gibbs, grand canonical) that is appropriate for statistical thermodynamics, whenever the chemical potential is physically relevant. The zero–temperature limit of this μ was derived by Perdew et al. for finite systems involving electrons, generally allowing for electron–electron interactions; we extend this derivation and, for semiconductors, we also consider the zero–T limit taken after the thermodynamic limit. The enormous finite size corrections (in macroscopic samples, e.g. 1 cm³) for one rather common definition of the c.p., found recently by Shegelski within the standard effective mass model of an ideal intrinsic semiconductor, are discussed. Also, two very–small–system examples are given, including a quantum dot.     

What is Erased in the Quantum Erasure?

In this paper, we re-examine a series of gedanken welcher Weg (WW) experiments introduced by Scully, Englert and Walther that contain the essential ideas underlying the quantum eraser. For this purpose we use the Bohm model which gives a sharp picture of the behaviour of the atoms involved in these experiments. This model supports the thesis that interference disappears in such WW experiments, even though the centre of mass wave function remains coherent throughout the experiment. It also shows exactly what it means to say ‘that the interference can be restored by manipulating the WW detectors long after the atoms have passed’. It does not support Wheeler’s notion that ‘the past is undefined and undefinable without the observation (in the present)’.     

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation.