EPR study of ceria–silica and ceria–alumina catalysts: Localization of superoxide radical anions

Oxygen adsorption experiments were performed on evacuated and prereduced CeO₂/SiO₂ and CeO₂/Al₂O₃ catalysts with and without platinum. Considerable amounts of the superoxide radical ions were stabilized on all the samples. Signal parameters suggest Ce⁴⁺–O₂⁻ positioning for all detectable superoxide species. Physisorbed oxygen broadens O₂⁻ signal beyond detection for all the alumina-based samples, while the same procedure for all the silica-based samples did not change signal shape of O₂⁻ species. Detectable O₂⁻ species are localized in the bulk of ceria and the nature of support (silica or alumina) determines the number of oxygen vacancies and the rate of electron transfer. XRD data suggest that for alumina-based samples small and/or thin islands of ceria dominate, while comparatively large ceria particles are stabilized on the surface of silica-based samples with the same ceria content. Average size of ceria crystallites is still not determining factor and cannot account for the observed differences. Higher concentrations of paramagnetic species may be stabilized on alumina-based samples and thus, sensor-like behavior towards gaseous oxygen at room temperature was detected for them—oxygen admission reversibly changes superoxide lineshape. For silica samples, only minor changes of O₂⁻ lineshapes were typical upon the change of the partial pressure of oxygen at ambient and low temperatures. Addition of platinum has little effect on parameters of the O₂⁻ signal, except an enhancement of the superoxide decay in the reducing media. Possible site for O₂⁻ stabilization inside the lattice of CeO₂ was proposed and relevance of the observed effects to the redox catalysis discussed.     

Transport in ceria electrolytes modified with sintering aids: effects on oxygen reduction kinetics

Small (2 mol%) cobalt oxide additions to ceria-gadolinia (CGO) materials considerably improve sinterability, making it possible to obtain ceramics with 95–99% density and sub-micrometre grain sizes at 1,170–1,370 K. The addition of Co causes a significant shift of the electrolytic domain to lower pO₂. This modification to the minor electronic conductivity of the electrolyte material has influence on the cathodic oxygen reduction reaction. The impedance technique is shown to provide information not only about polarisation resistance, but also about the active electrode area from analysis of the current constriction resistance. It is demonstrated that this current constriction resistance can be related to the minor electronic contributions to total conductivity in these materials. A simple imbedded grid approach gives control of the contact area allowing the properties of the electrolyte materials to be studied. A much lower polarisation resistance for the Co-containing CGO electrolyte is observed, which can be clearly attributed to an increased three-phase reaction area in the Co-containing material, as a consequence of elevated p-type conductivity.     

La0.8Sr0.2Ga0.8Mg0.2O3与La0.8Sr0.2Ga0.8Mg0.15Co0.05O3电导的对比

采用固相合成法制备了La0.8Sr0.2Ga0.8Mg0.2O3(LSGM8282)和La0.8Sr0.2Ga0.8Mg0.15Co0.05O3 (LSGMC5), 利用四电极交流阻抗法和Hebb-Wagner 极化法对比研究了两种材料的总电导率和电子电导率. 实验结果表明, LSGM8282 的总电导率与氧分压无明显依赖关系, 而LSGMC5 的总电导率在高氧分压区随氧分压降低而增加,在中等氧分压区域基本保持不变. 在973-1173 K的温度范围内, LSGM8282的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和1/4.在1073-1173 K的温度范围内, LSGMC5的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和约为1/8, 表明LSGMC5的空穴产生机制可能与LSGM8282不同. LSGM8282 的氧离子电导率与氧分压无关, 而LSGMC5 的氧离子电导率在高氧分压区随氧分压的减小而增加.     

Indium(I) bromide-mediated coupling of dibromoacetonitrile with aldehydes followed by Boord elimination of bromine and oxygen of β-bromo alkoxides for preparation of 3-organyl-2-alkenenitriles

The organoindium compound derived from indium monobromide and dibromoacetonitrile reacts with carbonyl compounds to afford the corresponding 2-bromo-2-cyano-indium(III) alkoxide. The action of a second equivalent of indium monobromide onto the alkoxides derived from aldehydes promotes the Boord elimination of the β-related oxygen and bromine atoms leading to 2-alkenenitriles.     

硫酸介质中Ti／SnO2／PbO2析氧阳极的研究

由于硫酸溶液具有高的电导、一般条件下性质稳定、价格相对低廉等优点，所以电化学合成大多在硫酸溶液中进行．阳极析氧是电化学合成不可避免的阳极过程．但因硫酸的强腐蚀性，以及从阳极析出的氧的强氧化性，使得能满足工业生产的阳极材料很缺乏．自１９５０年荷兰Ｈｅｎ...     

Determination of oxygen content in YBa2Cu3O6.5+x

A method for determining the oxygen content of the high-temperature superconductor YBa₂Cu₃O_6.5+x is described. The superconductor is dissolved in 4.4 M hydrobromic acid, forming bromine. The mixture is then diluted with hydrochloric acid to obtain a solution of bromine and Cu(II) in 0.44 M hydrobromic acid and 1.1 M hydrochloric acid. As(III) is added in slight excess of that required to react with the bromine and the unreacted As(III) is determined by titration with potassium bromate. Oxygen does not interfere. The results of this method are in agreement with those of other iodimetric procedures. The dissolution of the superconductor in 4.4 M hydrobromic acid is much faster than in hydrochloric acid, the medium used in one iodimetric technique. YBa₂Cu₃O_6.5+x sintered fibers and powder samples weighing from ca. 0.5 to 200 mg were analyzed for oxygen content.     

几种光敏剂光敏氧化效率的比较

<正> 光敏氧化效率是由敏化剂分子吸收光量子数及其产生单重态氧的量子产率决定的,这要求敏化剂的吸收光谱同光源的发射光谱很好地匹配。本文报道竹红菌甲素匹配高压钠灯有效地产生单重态氧,高效光敏氧化一系列具有不同反应活性的底物,成为单重态氧化学中一个新的光敏氧化体系。     

Energetics of magnesium, strontium, and barium doped lanthanum gallate perovskites

LaGaO₃ perovskites doped with Sr or Ba at the La site and Mg at the Ga site were prepared by solid-state reaction or sol-gel method and characterized. Enthalpies of formation from constituent oxides at 298 K were determined by high-temperature oxide melt solution calorimetry. Energetic trends are discussed in terms of defect chemistry. As oxygen deficiency increases, formation enthalpies define three trends, LaGa_1−yMg_yO_3−δ (LGM), La_1−xSr_xGa_1−yMg_yO_3−δ (LSGM), and La_1−xBa_xGa_1−yMg_yO_3−δ (LBGM). They become less exothermic with increasing doping, suggesting a dominant destabilization effect from oxygen vacancies. The endothermic enthalpy of vacancy formation is 275±37, 166±18 and 138±12 kJ/mol of V_O^·· for LGM, LBGM and LSGM, respectively. Tolerance factor and ion size mismatch also affect enthalpies. In terms of energetics, Sr is the best dopant for the La site and Mg for the Ga site, supporting earlier studies, including oxygen ion conductivity and computer modeling.     

TDS and XPS study of oxygen diffusion into subsurface layers of Pd(110)

Summary The interaction of O₂with Pd(110) has been studied by TDS and XPS at T = 400 K and at pressures P_{O2 from 2.6x10}^-6to 10 Pa. At low exposures in O₂(e￡1-5 L), an adsorption layer withqof ca.0.5 and with the O1s peak at BE = 529.3 eV has been found to form on the surface. Whenegrows from 5 to 10⁸L, the position and intensity of the oxygen O1s peak remain practically constant. At the same time, as much as 5 mL of oxygen is absorbed according to the TDS data. The results obtained by TDS and XPS indicate that oxygen penetrates deep into the subsurface layers of palladium (315-20 ?) and is distributed in its bulk in a low concentration.     

Chemical diffusion of oxygen in tin dioxide: Effects of dopants and oxygen partial pressure

Tin dioxide SnO_2−δ is a pronounced n-type electron conductor due to its oxygen deficiency. This study investigates the rate of chemical diffusion of oxygen in SnO_2−δ single crystals, which is a crucial step in the overall stoichiometry change of the material. The chemical diffusion coefficient D^δ was determined from conductivity- and EPR-relaxation methods. The temperature dependence was found to be . The dependence on crystal orientation, dopant content and oxygen partial pressure was below experimental error. The latter observation leads to the conclusion that the chemical diffusion coefficient is close to the diffusion coefficient of oxygen vacancies. Along with the relaxation process resulting from the chemical diffusion of oxygen, additional processes were observed. One of these was attributed to complications in the defect chemistry of the material. The relevance of the results for the kinetics of drift processes of Taguchi sensors is discussed.