High Pressure Instrumentation: Low and Negative Pressures

Much work on semiconductors, soft solids and biological materials does not require the megabar capability of the diamond anvil cell; a few accurate kbar being all that may be required. Work in this range poses its own challenges, to make the experiments routine, safe and reliable, and well-calibrated. We contrast diamond anvil cells working at what for them is very low pressure, with traditional bombs working at what for them is dangerously high pressure. We describe our preferred solution, a single-diamond cell, and demonstrate its use with Raman data from ethanol under low pressure. Negative hydrostatic pressure cannot be obtained by traditional methods. However, we present data showing the Raman spectrum of ethanol apparently at the negative pressure of m 3 kbar.     

Optical pressure sensors for high-pressure–high-temperature studies in a diamond anvil cell

We review the various optical pressure sensors that are suitable for high-pressure and high-temperature studies in a diamond anvil cell. Two different kinds of sensors are considered: those based on the pressure shift of a fluorescence line (ruby, SrB₄O₇:Sm²⁺) and those based on the pressure shift of a Raman line (c-BN, diamond). The calibration of those sensors are presented in detail, and discussion is made on their useful pressure and temperature ranges.     

High-pressure route to superhard boron-rich solids

Novel superhard phases are expected to be found among various high-pressure polymorphs of light element compounds. Besides diamond-like phases, the icosahedral boron-rich solids are of particular interest because they could combine high hardness with advanced electronic and phonon transport properties, lightness, high thermal and chemical stability. Here we review some recent results on high-pressure synthesis of novel boron-rich solids.     

高压下AuCu3热动力学性质的第一性原理研究

利用平面波赝势密度泛函理论研究了AuCu3的结构性质,得到了晶格常数a、体弹模量 、体弹模量对压强的一阶导数 ,计算结果与实验值相吻合。通过准谐德拜模型成功地获得了高温高压下AuCu3的状态方程、热膨胀系数、热容及德拜温度。     

FDTD study of subwavelength imaging by a photonic crystal slab

The problem of subwavelength imaging via a photonic crystal slab lens made of two-dimensional (2D) square arrays of parallel dielectric cylinders in air is studied and discussed theoretically. The finite-difference time-domain method is employed to investigate the unique features of imaging by such lens. We confirm earlier findings that a photonic crystal slab lens can provide the imaging of a point source. By analysing the transmission properties of the proposed structure, we demonstrate that inside the all-angle negative refraction, there are some favourable directions for waves to travel. We show that the surface termination of the photonic crystal is a key parameter to obtain a good quality image. The super-resolution of two sources separated by a distance less than the wavelength is also considered. It is shown that the achievable resolution is limited by the slab length.     

Photoluminescence of gallium arsenide electron-irradiated at 20 K

The processes of defect formation in single crystals of gallium arsenide electron-irradiated at cryogenic temperatures (∼20 K) have been investigated by the luminescence method. It is shown that at such temperatures the primary radiation-induced defects, in particular, intrinsic interstitial atoms, can migrate in a crystal and form complexes with their participation. Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 122–124, January–February, 1997.     

Field-induced functions of porous Si as a confined system

Electroluminescent porous Si (PS) diodes exhibit various useful functions under a high-electric field. The experimental PS diodes are composed of thin semitransparent metal films, PS layers (about 500 nm thick in minimum), p- or n-type Si substrates and ohmic back contacts. Definite nonlinear electrical behavior (negative resistance and nonvolatile bistable memory effects) and cold electron emission phenomena appear in these PS diodes associated with the EL emission. Both the negative resistance and memory effects are related to the charging of Si nanocrystallites by field-induced carrier injection. The electron emission observed in the PS diodes formed on n+–Si substrates is caused by hot electrons tunnelling through the top contact. By an appropriate structural control of PS, the effective drift length under a high-field conduction is significantly increased, and then electrons are emitted ballistically. These functions reflect the activity of PS as a nanocrystalline confined system.     

Negtive thixotropy of solutions of partially hydrolyzed polyacrylamide. Part I: The influence of shear rate on time changes of flow characteristics

A strongly negative thixotropic behavior of solutions of partially hydrolyzed polyacrylamide in a glycerol-water mixture has been observed at high dilution. Using a Couette viscometer, time changes of viscosity at various shear rates were studied in detail.     

Rigid interfaces for lattice models at low temperatures

Lattice models (on a hypercubic lattice of dimension larger than or equal to three) with spins attaining a finite number of values and finite-range interactions at low temperatures are considered. The existence of rigid interfaces as well as of surface tension under appropriate conditions is proven and the properties of corresponding Gibbs states are investigated.     

Criteria of negative thixotropy of poly(methyl methacrylate) solutions as a function of temperature and of the thermodynamic quality and viscosity of the solvent

A study of the effect of thermodynamic quality and viscosity of the solvent and of temperature on the negative thixotropy of poly(methyl methacrylate) solutions using criteria suggested in the preceding paper showed that the minimal shear stress is a more general criterion of hydrodynamic conditions of the formation of this effect than the minimal velocity gradient. It is assumed that the occurrence of negative thixotropy is due to the activation of macromolecules combined with their critical deformation and orientation caused by the effect of a certain minimal shear stress. A general quantitative relationship between the induction period and conditions of formation of the negative thixotropic structure was derived and experimentally tested.