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A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 × 1010-0.7 × 1012 W cm−2 drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of ∼0.7 × 1012 W cm−2 leads to the burning through a 500 μm thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 × 1010 W cm−2 < TEB ≤ 3.8 × 1010 W cm−2. 相似文献
76.
A more noble and biocompatible Ti alloy was achieved at fluence of 140 J cm−2 where the implant indicated a higher degree of hardness (825HV), higher corrosion resistance (−0.21 V) and highest hydrophilicity (i.e. θc = 37°) compared with 70° of the control sample. These values corresponded to 58 and 39 mN m−1 of surface tension respectively. The laser treated samples at 140 J cm−2 showed higher wettability characteristics than mechanically roughened surface. Cell growth and their spreading condition in a specific area were analyzed by SEM and Image J Program software. Clearly, more cells were attached (1.2 × 105) to and spread (488 μm2) over the surface at 140 J cm−2 than in any other condition. Pathologically, the treated samples indicated no sign of infection. 相似文献
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Bingyuan Zhang Gang Li Meng Chen Guoju Wang Yonggang Wang 《Optics & Laser Technology》2007,39(5):1094-1097
We report a diode-end-pumped passively Q-switched Nd:GdVO4 laser operating at 1.06 μm with In0.25Ga0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 μJ and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W. 相似文献
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通过合理设计精密调控各元件和温控电流,得到了平均功率为70 mW,脉冲宽度为22 ns,重复频率为14 kHz,峰值功率高达230 W的Nd3+∶GdVO4/Cr4+YAG红外脉冲激光器.先采用双凸透镜组合成的望远镜系统对1 063 nm的红外激光进行扩束,再对该光束聚焦,最后经双轴晶体LBO倍频后,得到了平均功率为40.6 mW,脉冲宽度为16 ns,重复频率为14 kHz,峰值功率高达181 W的绿光激光输出,1063 nm→532 nm的转换效率高达58%.测量了532 nm的光谱线宽曲线.解释了该聚焦方法比单一薄透镜效果明显好的原因,并指出了这种聚焦方法的使用对象. 相似文献
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A dual-frequency Nd: YAG laser which can output two frequencies with frequency difference of more than 5 gigaherz is developed. By inserting and moving an intracavity quartz crystal wedge in diode pumped Nd:YAG laser, It can be obtained and tuned frequency difference in a wide frequency range. The stabilization of frequency difference in free state is much better than that of birefringent dual-frequency He-Ne lasers at similar laboratory conditions. With such a large tunable frequency difference i.e. short synthetic wavelength, the laser may be used as the light source of absolute distance interferometers. In our experiment, the methods for tuning frequency difference by rotating and applying a tunable force on the intracavity quartz plate are also studied. 相似文献