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21.
Amorphous carbon films (ACFs) have recently emerged as one of the best candidates for etching-resistant hardmask materials in advanced semiconductor manufacturing processes. Etching resistivity of ACFs is known to be improved by controlling the relative abundance between sp2 and sp3 bonds. We have investigated the relative abundance between sp2 and sp3 bonds in several ACFs, fabricated by plasma-enhanced chemical vapor deposition at different temperatures, which were analyzed by using X-ray photoemission spectroscopy, Raman spectroscopy, and transmission electron microscopy. We found that the relative abundance of sp2 bond increased as the growth temperature was raised. Furthermore, the ACFs eventually evolved into nano-crystalline graphite with increasing growth temperature. 相似文献
22.
Layers of the metastable, amorphous HAlO are synthesized by chemical vapor deposition from the molecular compound tert-butoxyalane ([tBu-O-AlH2]2). At temperatures above 500 °C, these layers transform to biphasic Al·Al2O3 due to the elimination of di-hydrogen. The interaction of HAlO films with short laser pulses causes partial transformation of amorphous HAlO into nano-crystalline Al·Al2O3. Using an interference pattern of two coherent high-power Nd:YAG laser beams produces local and periodic heating, inducing crystallization at equally distant lines in the HAlO layer. Depending on the laser fluence, different morphologies and different amounts of crystalline phases are obtained. In this study, the surface morphology and the distribution of crystalline phases of the structured samples are analyzed using SEM, FIB and TEM. The two-dimensional structures consist of periodic variations of morphology, chemical composition, and phase identity with a well-defined long-range order. When bio-functionalized, the structured samples may be used as carriers for structurally controlled cell-cultivation. 相似文献