Correlation of band electronic structure with efficiency in perovskite solar cells with vanadium (Ⅳ) oxide thin film buffers

Perovskite solar cells have been studied extensively in the area of perovskite solar cells because they have a comparatively free hysteresis. Through fabrication of a perovskite solar cell based on a vanadium oxide buffer, this study clarified the mechanism of electron and hole transport in the laminated layer upon irradiation with light. The power conversion efficiency (PCE) of the Vanadium (Ⅳ) oxide (VO₂) sputtering process device was approximately 13% and with the spin-coating process was 8.5%. To investigate the physicochemical origin of such PCE differences depending on the process type, comprehensive band alignment and band structure analyses of the actual cell stacks were performed using X-ray photoelectron spectroscopy depth measurements. Accordingly, it was found that the inconsistent valence band offset between the perovskite absorption layer and V₂O₅ layer as a function of the VO₂ process type caused a difference in the hole transport, resulting in the difference in the efficiency.     

Generating Multidirectional Variable Hidden Attractors via Newly Commensurate and Incommensurate Non-Equilibrium Fractional-Order Chaotic Systems

This article investigates a non-equilibrium chaotic system in view of commensurate and incommensurate fractional orders and with only one signum function. By varying some values of the fractional-order derivative together with some parameter values of the proposed system, different dynamical behaviors of the system are explored and discussed via several numerical simulations. This system displays complex hidden dynamics such as inversion property, chaotic bursting oscillation, multistabilty, and coexisting attractors. Besides, by means of adapting certain controlled constants, it is shown that this system possesses a three-variable offset boosting system. In conformity with the performed simulations, it also turns out that the resultant hidden attractors can be distributively ordered in a grid of three dimensions, a lattice of two dimensions, a line of one dimension, and even arbitrariness in the phase space. Through considering the Caputo fractional-order operator in all performed simulations, phase portraits in two- and three-dimensional projections, Lyapunov exponents, and the bifurcation diagrams are numerically reported in this work as beneficial exit results.     

Interference law for coherent stochastic electromagnetic beams

Two-beam interference law for the superposition of stochastic, spatially coherent, electromagnetic beams is derived. Only a single phase is found to enter the interference law, in spite of the vector nature of the problem. The meaning of the phase is elucidated.     

Information hiding based on the optical interference principle

An information hiding method based on the optical interference principle is proposed. In this method, a secret image can be obtained by two light beams' interference. One of the beams is modulated by our assigned host image; and the other is modulated by a noise-like complex distribution, which is regard as the encrypted image. The transmission of the encrypted image can be implemented by hiding it in the host image to prevent the communication from being perceived by unauthorized person. In addition, this method can also realize simultaneous encryption and hiding for two images. A series of numerical simulation results are presented to verify the feasibility of our proposed method.     

Design of laser interferometric system for measurement of gear tooth flank

A laser interferometric system (LIS) based on oblique incidence and phase shifting technique has been designed for the measurement of gear tooth flank. For a spur involute gear with a module of 2.0, 60 teeth, and a 20-mm facewidth, some critical parameters of the LIS are calculated, the oblique incidence angle is 84.5°, the beam diameter is 20 mm, and the focal length of imaging lens is 100 mm, and the resolution of CCD camera is 1360 × 1024 pixels. To test the capability of the designed LIS, the numerical simulation is done for the LIS. The actual LIS is built on an optical platform and the experiment is carried out. Both interference fringe patterns from the numerical simulation and the actual experiment are good and coincident with each other, which show the designed LIS is feasible.     

A simple technique for evaluation of transmission coefficient at the splice with angular offset and transverse offset for first higher mode propagation in graded index fibers

We present simple and accurate analytical expressions for transmission coefficient at the splice with angular offset and transverse offset in case of first higher mode propagation in graded index fibers. We employ the simple series expression for first higher order modal field for graded index fiber. The evaluation of the concerned parameters based on our formalism requires very little computations. Here, we show that our estimations match excellently well with the exact results in case of step and parabolic index fibers. Further, splice being highly tolerant for longitudinal separation, our analysis is judiciously restricted to the case of transverse and angular mismatches only. The analysis should find application in dual mode graded index fiber in all optical technology.     

用于抛物柱面空间功率合成天线的功分喇叭阵列

 提出了一种用于偏馈抛物柱面反射天线的功分喇叭。由于改善了口面上的电磁分布,该功分喇叭可以让馈源阵列的栅瓣电平抑制到－28 dB。用FEKO进行仿真发现,与传统用角锥喇叭阵列作为馈源的抛物柱面反射天线相比,使用功分喇叭直线阵列可以使空间功率合成天线的效率从68%提高到80%,同时天线的增益也能增加0.7 dB。     

利用偏置磁极周期会切磁铁产生边聚焦场

 利用理论分析和数值计算的方法,研究了偏置磁极周期会切磁铁产生的、可用于带状电子束宽边聚焦的边聚焦场。结果表明:增加偏置长度,减小电子束通道宽度,增大磁极轴向长度可以在基本不改变边聚焦场在x方向上分布特性的前提下提高幅值;增大电子束通道的高度,增大磁极厚度均可以减小边聚焦场在x方向上分布曲线的曲率,但同时其幅值也会降低,该降低可利用前述方法予以补偿。在对带状电子束宽边聚焦进行束匹配时,可以先进行曲率匹配,再进行幅值匹配。在进行参数选择时,应合理选择束通道高度和磁极厚度的取值,以避免束通道内的边聚焦场在x方向上的分布出现曲率反向。     

Periodic patterning of silicon by direct nanosecond laser interference ablation

The production of periodic structures in silicon wafers by four-beam is presented. Because laser interference ablation is a single-step and cost-effective process, there is a great technological interest in the fabrication of these structures for their use as antireflection surfaces. Three different laser fluences are used to modify the silicon surface (0.8 J cm⁻², 1.3 J cm⁻², 2.0 J cm⁻²) creating bumps in the rim of the irradiated area. Laser induced periodic surface structures (LIPSS), in particular micro and nano-ripples, are also observed. Measurements of the reflectivity show a decrease in the reflectance for the samples processed with a laser fluence of 2.0 J cm⁻², probably caused by the appearance of the nano-ripples in the structured area, while bumps start to deteriorate.     

Dependence of photoluminescence of CdSe/ZnS on excitation wavelength

We have found that the photoluminescence (PL) intensity of CdSe/ZnS nanocrystals placed on a thin film of insulator (GaAsOx/GaAs) depends on excitation wavelength through the interference effects of the excitation light. By employing the multi-reflection/interference calculation, the insulator thickness of the underlying non-uniform patterns can be evaluated by the simple observation of CdSe/ZnS PL with a couple of excitation wavelengths. Moreover, the differences observed for the temporal evolution of CdSe/ZnS PL (blue shifts and degradation) among the excitation wavelengths suggest that the photo-induced changes of chemical composition and surface ligands are responsible for blue shifts and degradation, respectively.