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41.
This paper proposes the Rice condition numbers for invariant subspace, singular sub-spaces of a matrix and deflating subspaces of a regular matrix pair. The first-order perturbation estimations for these subspaces are derived by applying perturbation expansions of orthogonal projection operators.  相似文献   
42.
This paper formulates a two-dimensional strip packing problem as a non-linear programming(NLP)problem and establishes the first-order optimality con-ditions for the NLP problem.A numerical algorithm for solving this NLP problemis given to find exact solutions to strip-packing problems involving up to 10 items.Approximate solutions can be found for big-sized problems by decomposing the setof items into small-sized blocks of which each block adopts the proposed numericalalgorithm.Numerical results show that the approximate solutions to big-sized prob-lems obtained by this method are superior to those by NFDH,FFDH and BFDHapproaches.  相似文献   
43.
证明了线性规划的K uhn-Tucker条件蕴含着它的对偶问题,解释了L agrange乘子的意义.进而显示了K-T条件中的互补松驰性与对偶线性规划的互补松紧定理之间的联系.  相似文献   
44.
We obtain the LpLq maximal regularity of the Stokes equations with Robin boundary condition in a bounded domain in ?n (n?2). The Robin condition consists of two conditions: v ? u=0 and αu+β(T(u, p)v – 〈T(u, p)v, vv)=h on the boundary of the domain with α, β?0 and α+β=1, where u and p denote a velocity vector and a pressure, T(u, p) the stress tensor for the Stokes flow and v the unit outer normal to the boundary of the domain. It presents the slip condition when β=1 and non‐slip one when α=1, respectively. The slip condition is appropriate for problems that involve free boundaries. Copyright © 2006 John Wiley & Sons, Ltd.  相似文献   
45.
本文给出了四次函数实零点的完全判据和正定条件,这一结果在研究多项式系统的奇点分析和分支问题时给出了可以实用的判据.  相似文献   
46.
We prove equivalence of the definitions by the author and by Korevaar and Schoen of the Sobolev classes of mappings of a domain of an arithmetic n-dimensional space to a metric space.  相似文献   
47.
Let X be a Banach space whose characteristic of noncompact convexity is less than 1 and satisfies the nonstrict Opial condition. Let C be a bounded closed convex subset of X, KC(X) the family of all compact convex subsets of X and T a nonexpansive mapping from C into KC(X) with bounded range. We prove that T has a fixed point. The nonstrict Opial condition can be removed if, in addition, T is an 1-χ-contractive mapping.  相似文献   
48.
We present the growth morphology, the long-range ordering, and the evolution of the valence band electronic states of ultrathin films of copper phthalocyanine (CuPc) deposited on the Au(1 1 0)-(1 × 2) reconstructed surface, as a function of the organic molecule coverage. The low energy electron diffraction patterns present a (5 × 3) reconstruction from the early adsorption stages. High-resolution UV photoelectron spectroscopy data show the disappearance of the Au surface states related to the (1 × 2) reconstruction, and the presence of new electronic features related to the molecule-substrate interaction and to the CuPc molecular states. The CuPc highest occupied molecular orbital gradually emerges in the valence band, while the interface electronic states are quenched, upon increasing the coverage.  相似文献   
49.
We show that the tensor product B-spline basis and the triangular Bernstein basis are in some sense best conditioned among all nonnegative bases for the spaces of tensor product splines and multivariate polynomials, respectively. We also introduce some new condition numbers which are analogs of component-wise condition numbers for linear systems introduced by Skeel.  相似文献   
50.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.  相似文献   
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