Direct Comparison of Crystal Nucleation Activity of PCL on Patterned Substrates

A sample containing different regions with poly(ε-caprolactone)(PCL), oriented polyethylene (PE), and oriented isotactic polypropylene (iPP) films in contact with glass slide has been prepared to be observed in the same view field in an optical microscope and the crystallization of PCL in different regions during cooling from 80 °C down to room temperature at a rate of 1 °C·min^-1 was studied. The results showed that the crystallization of PCL started first at the PE surface and then at the iPP surface, while its bulk crystallization occured much later. This indicates that though both PE and iPP are active in nucleating PCL, the nucleation ability of PE is stronger than that of iPP. This was due to a better lattice matching between PCL and PE than that between PCL and iPP. Moreover, since lattice matching existed between every (hk0) lattice planes of both PCL and PE but only between the (100)PCL and (010)iPP lattice planes, the uniaxial orientation feature of the used PE and iPP films resulted in the existence of much more active nucleation sites of PCL on PE than on iPP. This led to the fact that the nucleation density of PCL at PE surface was so high that the crystallization of PCL at PE surface took place in a way like the film developing process with PCL microcrystallites happened everywhere with crystallization proceeding simultaneously. On the other hand, even though iPP also enhanced the nucleation density of PCL evidently, the crystallization of PCL at iPP surface included still a nucleation and crystal growth processes similar to that of its bulk crystallization.     

Nanoscale anglesite growth on the celestite (0 0 1) face

In situ atomic force microscopy (AFM) was used to study the growth behaviour of anglesite (PbSO₄) monolayers on the celestite (0 0 1) face. Growth was promoted by exposing the celestite cleavage surfaces to aqueous solutions that were supersaturated with respect to anglesite. The solution supersaturation, β_ang, was varied from 1.05 to 3.09 (where β_ang = a(Pb²⁺) · a(SO₄²⁻)/K_sp,ang). In this range of supersaturation, two single anglesite monolayers (3.5 Å in height each) from pre-existent celestite steps were grown. However, for solution supersaturation β_ang < 1.89 ± 0.06, subsequent multilayer growth is strongly inhibited. AFM observations indicate that the inhibition of a continuous layer-by-layer growth of anglesite on the celestite (0 0 1) face is due to the in-plane strain generated by the slight difference between the anglesite and celestite lattice parameters (i.e. the linear misfits are lower than 1.1%). The minimum supersaturation required to overcome the energy barrier for multilayer growth gave an estimate of the in-plane strain energy: 11.4 ± 0.6 mJ/m²_. Once this energy barrier is overcome, a multilayer Frank–Van Der Merwe epitaxial growth was observed.     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

Anomalous scaling in epitaxial growth on vicinal surfaces: meandering and mounding instabilities in a linear growth equation with spatiotemporally correlated noise

We have undertaken an extensive analytical and kinetic Monte Carlo study of the (2+1) dimensional discrete growth model on a vicinal surface. A non-local, phenomenological continuum equation describing surface growth in unstable systems with anomalous scaling is presented. The roughness produced by unstable growth is first studied considering various effects in surface diffusion processes (corresponding to temperature, flux, diffusion anisotropy). We found that the thermally activated roughness is well-described by a generalized Lai–Das Sarma–Villain model with non linear growth continuum equation and uncorrelated noise. The corresponding critical exponents are computed analytically for the first time and show a continuous variation in agreement with simulation results of a solid-on-solid model. However, the roughness related to the meandering instability is found, unexpectedly, to be well described by a linear continuum equation with spatiotemporally correlated noise.     

Epitaxial variations of Ni films grown on MgO(0 0 1)

Epitaxial Ni films were deposited on (0 0 1)MgO by DC magnetron sputtering under ultra-high vacuum conditions for studies involving magnetic-multilayer applications. The deposition temperatures of the Ni films studied in this work were 100 and 400°C. Examination by transmission electron microscopy (TEM) and electron diffraction revealed that the film deposited at the lower temperature was predominately Ni[0 0 1]MgO[0 0 1] and Ni(0 1 0)MgO(0 1 0) oriented and smooth, as expected. However, the higher temperature films were predominately of the Ni MgO[0 0 1] and Ni MgO(1 0 0) orientation and facetted. The orientation has been confirmed by X-ray diffraction, where this orientation was observed to be four-fold degenerate. For each of these four orientations there also existed a twin orientation, reflected about the MgO(1 0 0) planes, giving eight possible orientations for the Ni crystallites on MgO. This epitaxial relationship was studied by dark-field TEM and electron diffraction. Because these films were polycrystalline and hence produced many diffraction spots from both the Ni and MgO with similar lattice spacings, electron diffraction patterns of the films were indexed using an electron diffraction image processing (EDIP) technique. In this technique, the polycrystalline electron diffraction pattern was converted into a graph, with the x-axis displaying lattice spacings and the y-axis, integrated intensity.     

Iron deposition on the five-fold surface of the icosahedral Al-Pd-Mn quasicrystal

The room temperature adsorption behaviour of Fe on the five-fold surface of i-Al-Pd-Mn has been studied using scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). A complex growth scenario for Fe adsorption on this substrate is observed with STM. At coverages up to about 3 MLE (monolayer equivalent), layer-by-layer growth is observed whereby small clusters and islands are formed which eventually coalesce into almost complete monolayers. No LEED pattern is observed, indicating that the layers are disordered. The AES results rule out intermixing. Above this coverage, there is a transition to a multilayer island growth mode. The islands are rotated by 72° and have the bcc(1 1 0) Fe structure. The results are compared with previous work on Fe adsorption on this substrate and on Al and Fe single crystal substrates.     

Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

C-cut and α-cut sapphire substrates are used to grow epitaxial titanium oxide films by pulsed-laser deposition at 700 °C under a controlled oxygen pressure in the 10⁻¹-10⁻⁵ mbar range. The rutile phase is evidenced in films whatever the substrate and the oxygen pressure while the anatase phase is only observed on c-cut sapphire substrate and for oxygen pressure down to 10⁻³ mbar. No other titanium oxide phases (i.e. TiO, Ti₂O₃ or Magneli phases) are identified despite the oxygen-deficiency observed in films grown at low oxygen pressure. According to asymmetric X-ray diffraction measurements performed on films, the main axis growth and the in-plane epitaxial relationships between titanium oxide films and sapphire substrates are found to be depending on the orientation of the sapphire basal plane and on the oxygen pressure. The anatase crystallites are highly oriented with the following epitaxial relationship . The rutile phase is (2 0 0) oriented on c-cut sapphire substrate and displays two distinct in-plane relationships: . The use of α-cut sapphire substrate leads to the growth of rutile crystallites (2 0 0) or (1 0 1) oriented. In these cases, the in-plane orientations are , respectively. For the two substrates used, schematic views of atomic arrangement of the different interfaces are proposed.     

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 10¹⁵ cm⁻². We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology.     

A comparison of commercial sources of epitaxial material for GaN HFETs fabrication

This paper describes a comparison of material and device results obtained from AlGaN/GaN epitaxial HFET wafers from three commercial sources. Although all three sources supplied material to the same nominal specification, X-ray diffraction, Hall effect and C–V profiling revealed significant differences between them. Wafers from two of the suppliers showed poor inter-device isolation characteristics, indicative of a conducting buffer layer. Wafers from the third supplier showed excellent inter-device isolation, but C–V measurements showed that the AlGaN was about twice as thick as specified, resulting in devices with high pinch-off voltages (−16 V). For the wafers with poor buffer isolation, RF measurements on 1.2 μm gate length devices gave values of f_T 5.0 GHz and values of f_max from 8.0 to 11.7 GHz (exact values depending on DC bias conditions), while for the wafer with over-thick AlGaN the corresponding values were 8.0 and 20.0 GHz.