Study of low concentrated ionic ferrrofluid stability in magnetic field by ultrasound spectroscopy

Ultrasound spectroscopy has been used to investigate the effect of magnetic field on particle (cluster) size distribution in ionic ferrofluid. The method applied is non-destructive, fast and sensitive to structural changes of a suspension as it is based on measurements of ultrasonic attenuation. Changes in the ultrasound attenuation induced by an external magnetic field have been measured for different frequencies of the acoustic wave. According to the Harker-Temple theory, the aggregation process has been analysed on the basis of the cluster size distribution determined for different magnetic field intensities.     

Random lasing in ZnO nanocrystals

Nanocrystalline ZnO powders can act as gain and scattering medium in a random laser where the light emission can be strongly amplified. In this work, we compare the luminescence properties of samples with different particle sizes in the regime of linear and nonlinear optics. In the high-excitation regime random lasing is observed in all samples. Here, the lasing threshold depends strongly on the size distribution in the ensemble. Additional characterization of the samples has been done by determining the absolute quantum efficiency of the radiative processes in the powder. The values are in the 10% range and the near-edge luminescence is strongly influenced by the particle sizes. We show that by annealing the nanocrystals coalesce to larger polycrystalline grains, which results in a new emission band at 3.333 eV due to the grain boundaries. Furthermore, it is found that in the annealed samples the threshold for random lasing could be considerably decreased.     

Electrical behavior of BaZr0.1Ti0.9O3 and BaZr0.2Ti0.8O3 thin films

BaZr_0.1Ti_0.9O₃ and BaZr_0.2Ti_0.8O₃ (BZT) thin films were deposited on Pt/Ti/LaAlO₃ (1 0 0) substrates by radio-frequency magnetron sputtering, respectively. The films were further annealed at 800 °C for 30 min in oxygen. X-ray diffraction θ-2θ and Φ-scans showed that BaZr_0.1Ti_0.9O₃ films displayed a highly (h 0 0) preferred orientation and a good cube-on-cube epitaxial growth on the LaAlO₃ (1 0 0) substrate, while there are no obvious preferential orientation in BaZr_0.2Ti_0.8O₃ thin films. The BaZr_0.1Ti_0.9O₃ films possess larger grain size, higher dielectric constant, larger tunability, larger remanent polarization and coercive electric field than that of BaZr_0.2Ti_0.8O₃ films. Whereas, BaZr_0.1Ti_0.9O₃ films have larger dielectric losses and leakage current density. The results suggest that Zr⁴⁺ ion can decrease dielectric constant and restrain non-linearity. Moreover, the enhancement in dielectric properties of BaZr_0.1Ti_0.9O₃ films may be attributed to (1 0 0) preferred orientation.     

Growth process of nanostructured silver films pulsed laser ablated in high-pressure inert gas

The growth process of silver thin films deposited by pulsed laser ablation in a controlled inert gas atmosphere was investigated. A pure silver target was ablated in Ar atmosphere, at pressures ranging between 10 and 100 Pa, higher than usually adopted for thin film deposition, at different numbers of laser shots. All of the other experimental conditions such as the laser (KrF, wavelength 248 nm), the fluence of 2.0 J cm⁻², the target to substrate distance of 35 mm, and the temperature (295 K) of the substrates were kept fixed. The morphological properties of the films were investigated by transmission and scanning electron microscopies (TEM, SEM). Film formation results from coalescence on the substrate of near-spherical silver clusters landing as isolated particles with size in the few nanometers range. From a visual inspection of TEM pictures of the films deposited under different conditions, well-separated stages of film growth are identified.     

Thin films of silver nanoparticles deposited in vacuum by pulsed laser ablation using a YAG:Nd laser

We report the deposition of thin films of silver (Ag) nanoparticles by pulsed laser ablation in vacuum using the third line (355 nm) of a YAG:Nd laser. The nanostructure and/or morphology of the films was investigated as a function of the number of ablation pulses, by means of transmission electron microscopy and atomic force microscopy. Our results show that films deposited with a small number of ablation pulses (500 or less), are not continuous, but formed of isolated nearly spherical Ag nanoparticles with diameters in the range from 1 nm to 8 nm. The effect of increasing the number of pulses by one order of magnitude (5000) is to increase the mean diameter of the globular nanoparticles and also the Ag areal density. Further increase of the number of pulses, up to 10,000, produces the formation of larger and anisotropic nanoparticles, and for 15,000 pulses, quasi-percolated Ag films are obtained. The presence of Ag nanoparticles in the films was also evidenced from the appearance of a strong optical absorption band associated with surface plasmon resonance. This band was widened and its peak shifted from 425 nm to 700 nm as the number of laser pulses was increased from 500 to 15,000.     

Silver-Doping Induced Lattice Distortion in TiO2 Nanoparticles

The Ag-doping effects on Ti02 nanoparticles are investigated by means of x-ray diffraction （XRD） and Raman scattering spectroscopy. XRD and Raman results indicate that Ag-doping stabilizes the rutile phase in TiO2. We find an Ag-doping induced lattice expansion in both anatase and rutile phases. The Ag-doping has different influences on the lattice distortion for anatase and rutile phases, that is, the e/a-value for the anatase phase decreases with 0.5% Ag-doping and then increases with 1~ Ag-doping while that for the rutile phase shows a gradual increase with increasing Ag-doping. We have ascribed the different variations of lattice distortion due to Ag-doping to the change of interracial interaction between the anatase and rutile phases induced by different Ag concentrations.     

Effect of C and SiC additions into in situ or mechanically alloyed MgB2 deformed in Ti sheath

Effect of 3.4 wt.% C and 5 wt.% SiC doping into the standard in situ (IN) process and mechanically alloyed (MA) MgB₂ was studied. Powders of IN and MA process were carried out in air and in argon filled glove box, respectively. Wire samples were prepared by two-axial rolling deformation of IN and MA powders inside the Ti tube. Titanium as sheath material allows to use higher sintering temperatures, we used 700 °C and 800 °C for 30 min in Argon. Critical current densities (J_c) were measured at variable temperatures 4.2 K, 10 K, 15 K and 20 K in the external magnetic fields ranging to 15 T. Critical temperatures, upper critical fields and irreversibility fields of IN and MA with SiC and C additions are compared and discussed. The highest transport properties were observed for wires with MA SiC doped MgB₂ in the whole scale of temperatures 4.2–20 K. Upper critical field was rapidly enhanced in the case of carbon doped MA samples at 4.2 K. MA samples have shown decreased J_c values for higher temperatures (15 K, 20 K), in some case even worse than for the not doped reference IN sample. Carbon substitution and grain connectivity of analyzed samples are compared and discussed. Presented results show that for 20 K applications some new ways (additions) have to be found for increasing the J_c substantially.     

Optical characteristics of highly ordered gallium oxide nano-islands on GaAs

A periodic array of Ga oxide islands was obtained by annealing the highly ordered Ga nano-droplets on GaAs surface at 400°C under an oxygen atmosphere for 7 hours. These Ga oxides are a mixture of α-Ga₂O₃ and β-Ga₂O₃ confirmed by Raman spectroscopy study. Enhanced optical transmission of GaAs with such ordered Ga oxide nano-islands was obtained. Both dielectric and dimensional confinement effects were considered in analysis of the electromagnetic characteristics of the nanostructured materials. Finite-difference time-domain method was used to numerically study the light transmission through the patterned Ga oxide on GaAs surface. Based on the calculated results, the light transmission enhancement is attributed to the formation of the ordered nano Ga oxides.     

Characterization for metamaterials with a high refractive index formed by periodic stratified metallic wires array

Ultralong ZnO nanowires were successfully prepared on a large scale by a microwave-assisted aqueous route without using any surfactant or template at relatively low temperature of 120°C. The obtained nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectrum (EDX). The growth mechanism and photoluminescence of the one-dimensional nanostructure, and photovoltaic performances for dye-sensitized solar cell (DSSC) of the nanowires were discussed in detail.     

In situ transmission electron microscopy observations of?the?crystallization of?amorphous?Ge?films

The crystallization of amorphous Ge films has been studied as a function of annealing temperature between 400 and 700°C by in situ transmission electron microscopy (TEM). It is found that crystallization does not occur until the annealing temperature reaches 650°C, which is nearly 250°C higher than the crystallization temperature in previous reports. The high crystallization temperature and average crystal size obtained by in situ TEM are in agreement with those from Raman spectroscopy and X-ray diffraction measurement. The kinetics analysis indicates that homogeneous nucleation is the dominant crystallization mode and the activation energy is up to about 3.1 eV.