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11.
Analytic Solution of Charge Density of Single Wall Carbon Nanotube under Conditions of Field Electron Emission 下载免费PDF全文
We derive the analytic solution of induced electrostatic potential along single wall carbon nanotubes. Under the hypothesis of constant density of states in the charge-neutral level, we are able to obtain the linear density of excess charge in an external field parallel to the tube axis. 相似文献
12.
L. Olsen 《Indagationes Mathematicae》2004,15(4):535-547
We give a systematic and detailed account of the Hausdorff dimensions of sets of d-tuples of numbers defined in terms of the asymptotic behaviour of the frequencies of strings of digits in their N-adic expansion. 相似文献
13.
We obtain Dirac’s classic monopole charge quantization from the point of view of geometric quantization and demonstrate how this leads to the conclusion that the electromagnetic field is a U(1)-gauge field. 相似文献
14.
本文证明了d2k =δ2k =d2k ≥b2k,其中d2k ,δ2k , b2k分别表示A(BlMp)在lNq下的Kolmogorov,线性,Bernstein 2k-宽度,d2k 表示AT(BlN相似文献
15.
An interferometer in which an atom traverses two identical micromaser cavities in succession is proposed. Depending on the preparation of the cavity fields, the probability for finding the atom in a definite final state displays Ramsey fringes or not. If the initial cavity fields are such that the state of the atom between the cavities can be determined, then the Ramsey fringes disappear, as is required by the principle of complementarity. 相似文献
16.
17.
We report X-ray absorption near edge structures (XANES) study of CeAl2 thin films of various thicknesses, 40-120 nm, at Al K- and Ce L3-edges. The threshold of the absorption features at the Al K-edge shifts to the higher photon energy side as film thickness decreases, implying a decreased in Al p-orbital charges. On the other hand, from Ce L3-edge spectra, we observed a decrease in the 5d4f occupancy as the surface-to-bulk ratio increases. The valence of Ce in these thin films, as revealed by the Ce L3-edge spectral results, is mainly trivalent. From a more detailed analysis we found a small amount of Ce4+ contribution, which increases with decreasing film thickness. Our results indicate that the surface-to-bulk ratio is the key factor which affects the electronic structure of CeAl2 thin films. The above observations also suggest that charge transfer from Al to Ce is associated with the decrease of the film thickness. 相似文献
18.
SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices. 相似文献
19.
A path-integral molecular dynamics technique for strongly interacting atoms using ab initio potentials derived from density functional theory is implemented. This allows the efficient inclusion of nuclear quantum dispersion in ab initio simulations at finite temperatures. We present an application to the quantum cluster H
5
+
. 相似文献
20.
We consider the semilinear Cauchy problem for a class of pseudo-differential operators generating sub-Markovian semigroups.
Solutions of such problems with negative definite nonlinearity play an important role in constructing branching measure-valued
processes. We establish local existence and uniqueness of solutions in the context of the Dirichlet space associated to the
problem. Comparison and global properties of solutions are also studied.
Accepted 29 August 2001. Online publication 17 December 2001. 相似文献