Hydrogenation Properties of Zr Films Under Various Conditions of Hydrogen Plasma

The hydrogenation properties of Zr samples with and without an Ni overlayer under various plasma conditions were investigated by means of non-Rutherford backscattering and elastic recoil detection analysis.The theoretical maximum hydrogen capacity,66.7 at%,could be achieved at a hydrogen absolute pressure of-2Pa and a substrate temperature of-393K for a plasma irradiation of only 10min;this was significantly greater than that for gas hydrogenation under the same hydrogen pressure and substrate temperature.It was also found that the C and O contamination on the sample surface strongly influences the hydrogenation,and that the maximum equilibrium hydrogen content drops dramatically with the increasing total contamination.In addition,the influence of the Ni overlayer on the plasma hydrogenation is discussed.     

改善液晶光阀投影光学系统偏振特性的理论设计方法

定量分析了液晶光阀投影光学系统中影响系统对比度的主要因素，利用矢量方法建立三维空间数学模型对光线进行追迹，并利用琼斯矩阵和矢量光学的原理分析了偏振器件--主要是波片--和各种光学薄膜对光学系统性能的影响。给出了在一定假设条件下的对没有波片的光学系统和插入波征后的光学系统的仿真计算结果。两组数据比较表明在光路中插入合适相位差的波片可以显著提高系统对比度等性能。     

Bi12TiO20纳米粉体的制备及其光吸收特性研究

以钛酸四丁酯和硝酸铋为原料 ,利用化学溶液分解法制备了Bi12 TiO2 0 纳米多晶粉体 .采用XRD和TEM对其结构和形貌进行了表征 .结合热重 差热 (TG DTA)分析 ,探讨了Bi12 TiO2 0 晶相的形成机理 .通过UV Vis漫反射谱的测定 ,研究了Bi12 TiO2 0 纳米晶粉体的光吸收特性 .结果显示 ,从组成为化学计量比的前驱液中可以很容易制得纯Bi12 TiO2 0 纳米晶粉体 ,该Bi12 TiO2 0 纳米晶粉体呈现了在很宽的波长范围内 (5 6 0～ 385nm )对光的吸收的特性 .     

白炽灯延寿节电开关

运用交流电路中线圈的自感特性，制成一种白炽灯的延寿节电开关，它可消除白炽灯起动瞬间的浪涌电流，延长白炽灯寿命，节约用电。     

绿色荧光粉YAGG∶Tb,Gd用于FED的尝试

FED器件的发展迫切需要具有化学和热稳定性 ,高亮度 ,长寿命的新型荧光材料。本文合成了Gd3 +离子共掺杂的YAGG∶Tb获得了YAGG∶Tb ,Gd ,并将其用于 0～ 30 0 0V低压范围 ,对其在不同电压和电流密度下的发光特性进行了测试。结果表明 ,该种材料特性优于ZnO∶Zn并且不存在电压与电流饱和     

Optical Properties of ZnFe2O4—SiO2 Granular Films Prepared by Radio—Frequency Magnetron Sputtering

We report on the optical properties of ZnFe2O4-SiO2 granular films prepared on quartz substrates by the radio-frequency magnetron sputtering method.Post-annealing was performed at different temperatures under flow oxygen atmosphere.The morphology and Structures of ZnFe2O4 nanoparticles were characterized by x-ray different line types in the optical absorption curves of ZnFe2O4-SiO2 granular films.The critical transition of line types occurs when ZnFe2O4 changes from amorphous to crystalline,and the transition temperature increases with the increasing content of ZnFe2O4.There is an obvious blueshift of the optical absorption edge of the granular films with the decreasing annealing temperature.     

用函数记录仪描绘LRC电路暂态过程

引言现有的普通物理实验教材中,对RC、RL和LRC电路暂态过程的描绘,多采取用方波发生器代替直流电源,用示波器观察或用照相法摄取暂态曲线,RC电路的暂态过程,也可以用电压表和秒表逐点测量来描绘曲线。这些方法或只能观察,定量分析不便,或虽能定量分析,但实验过程复杂,效果都不理想。本文介绍用函数记录仪直接描绘RC、RL和LRC电路的暂态过程曲线,实验方法简便,而且利用图象进行定量分析和计算都很方便。     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

两类拟共形映射的掩盖定理

In this paper we define two classes of quasiconformal mappings,and study their covering properties by methods of module.We obtain some new results.In the meantime,we give new methods to prove Koebe 1/2 covering theorem on convex conformal mappings.