A model for Light—Driven Proton Pump and Transfer in Bacteriorhodopsin

A theoretical model was assumed to describe the kinetic processes of light-driven proton pump and motion. The calculation shows that the photovoltage signals are greatly affected by experimental conditions including pulse width of excitation and impedance of measurement system. At the same excitation, only a negative photovoltage signal can be observed with small impedance and both the negative and positive signals can be observed with large impedance. With the same impedance, shorter response time of the pulsed photoelectric signals is responsible for shorter pulsed excitation. All these phenomena are in good agreement with the experimental results.     

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.     

Improvement of Main Magnetic Field Power Supply of SFC

The main magnetic field power supply is used for establishing main magnetic field of SFC, therefore excellent current stability and low ripple are required. Its DC output current range is 0～1300 A and max output voltage is 230 V. The power supply has been put into operation since Sep. in 2000, and was replaced in 033 room from 166 room of No.2 Building. We have improved the performance of power supply in this period.     

Eu2O3纳米晶谱带特征及光伏性质的研究

利用表面光电压谱技术对不同粒径的Eu2O3纳米晶进行光吸收特性的研究，并结合紫外－可见反射吸收光谱对其谱带进行解析，实验发现，随着样品粒径的变小，部分f→f跃迁的吸收带明显增加强并发生红移；在300－500nm区间有一个宽吸收边带，此带可归属于O2p→Eu4f的电荷转移跃迁。     

Electron Injection by E—Field Drift and its Application in Starting—up Tokamaks at Low Loop Voltage

We propose an innovative method of election injection by E-field drift into a plasma device and discuss its application in starting-up tokamak plasmas at low loop voltage.The experimental results obtained from HT-6M Tokamak are also presented.The breakdown loop voltage is obviously reduced and the discharge performance is improved by using the electron injection method.It could be applied to some other types of plasma device.     

无箔二极管电流电压关系研究

本文给出了无箔二极管物理特性的数值模拟研究结果。研究得到了二极管电流与二极管结构参数、二极管电压以及外加磁场强度等参数的变化关系特性，并且应用这些关系特性得到了在外加磁场强度足够大情况下二极管电流的近似表达为Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(r2/3-1)3/2，其中Ld为阴阳极间距；Rc为阴极发射端面的外半径；Rp为漂移管管壁半径；x=ln(Rp/Rc)，δr =Rp-Rc。这一表达式在大量二极管结构参数和二极管电压参数情况下与数值模拟结果在10％误差范围内相一致，能够比较准确的表达无箔二极管的电流电压关系。     

HL—1装置的电子回旋共振辅助击穿和电流启动

在ＨＬ－１装置上，我们对电子回旋共振（ＥＣＲＨ）辅助击穿和电流启动进行了研究，发现这时建立等离子体电流所需的环电压降低了约一半，等离子全电流的上升率增加了约３０％，放电初期所耗的伏秒数节省约１／３，约束得改善。     

A_(od)≠∞,r_(id)≠∞时比例运算电路的分析与计算

分析了两种比例运算电路在开环放大倍数Aod和差模输入电阻rid均为有限值时的闭环特性 ,导出了Avf,rif和rof的表达式     

ZnO-Bi2O3系压敏陶瓷的导电过程与等效势垒高度

研究了ZnO-Bi2O3系压敏陶瓷等效势垒高度φeff随着归一化电压的变化规律,发现等效势垒高度φeff随着归一化电压的增加先逐渐增大,达到最大值后持续下降.由于在外加电压作用下反偏势垒高度高于正偏势垒高度,等效势垒高度φeff主要取决于反偏势垒.因此,这种变化规律说明了ZnO压敏陶瓷晶界的导电过程可能存在三个阶段.在低归一化电压区,晶界区域中的电子从正偏势垒区注入到晶界无序层的速率低于电子从晶界无序层抽出到反偏势垒区的速率,从而导致等效势垒高度随着归一化电压的增加逐渐增大.在中等归一化电压区,电子从正偏势垒区注入到晶界无序层的速率和电子从晶界无序层抽出到反偏势垒区的速率相平衡,等效势垒高度达到最大值.在高归一化电压区,电子从正偏势垒区注入到晶界无序层的速率高于电子从晶界无序层抽出到反偏势垒区的速率,等效势垒高度随着归一化电压的增加逐渐下降,直至晶界击穿.同时分析了等效势垒高度φeff对泄漏电流IL的影响,发现泄漏电流与等效势垒高度差Δφ呈指数关系.