基于两原子同时和腔场共振作用制备两原子纠缠态的腔QED方案(英文)

我们提出了一个将两个远离的原子制备成纠缠态的腔QED方案,该方案基于两个原子同时和一个腔场发生共振作用.在这个方案里,我们利用一个事先制备好的纠缠态将另外两个分离的原子制备成纠缠态.该方案仅包含两个原子和腔场的共振相互作用,不需要用腔场存储量子信息,并且原子和腔场作用时间极短.因此,我们的方案基于目前的腔QED技术是可以实现的.     

铁磁/反铁磁双层薄膜自旋波共振谱

本文在一维海森堡模型的基础上,采用界面参数化方法,研究了铁磁/反铁磁双层薄膜中自旋波低温激发问题．重点讨论了表面各向异性对薄膜中自旋波共振谱的影响．结果表明：体系中的自旋波本征模存在共振行为,表面各向异性场对体模、完全禁闭模的共振谱影响较大,对界面模没有影响．     

The Isoenergetic KAM-Type Theorem at Resonant Case for Nearly Integrable Hamiltonian Systems

In this paper, we study the persistence of resonant invariant tori on energy surfaces for nearly integrable Hamiltonian systems under the usual R$\ddot{u}$ssmann nondegenerate condition. By a quasilinear iterative scheme, we prove the following things: (1) The majority of resonant tori on a given energy surface will be persisted under R$\ddot{u}$ssmann nondegenerate condition. (2) The maximal number about the preserved frequency components on a perturbed torus is characterized by the smaller of the maximal rank of the Hessian matrices of the unperturbed system and the nondegeneracy of resonance. (3) If unperturbed systems admit subisoenergetic nondegeneracy on an energy surface, then the majority of the unperturbed resonant tori on the energy surface will be persisted and give rise to a family of perturbed tori with the same energy, whose frequency ratios among respective ''nondegenerate'' components are preserved.     

太赫兹波导滤波器的分析与设计

分析了不同宽边情况下对滤波器加工精度的影响,分析结果表明对于不同频段的滤波器,需要选择合适的谐振腔的宽边才能达到较好的性能,同时分析了不同谐振模式的滤波器对加工精度的影响,分析表明,对于太赫兹频段滤波器,选用TE101谐振模式时存在腔体长度会比波导的宽边小很多的情况,而选用高阶谐振模式不但可以提高滤波器的品质因数Q值,减少损耗,同时也能在一定程度上降低滤波器对加工精度的要求。最后以0.34 THz 4阶带通滤波器为例验证此方法的正确性,测试表明该滤波器最低损耗为-0.73 dB,在0.335~0.349 THz范围内损耗在-2 dB以内。     

Low-temperature elastic constants and piezoelectric coefficients of langasite (La3Ga5SiO14)

A complete set of elastic constants C _ij and piezoelectric coefficients e _ij of a La₃Ga₅SiO₁₄ (langasite) single crystal was determined from 5.5 to 275.5?K by resonant ultrasound spectroscopy. Unlike a conventional crystal, the elastic constants C _ij of the langasite crystal showed three types of temperature dependence: (i) monotonic elastic stiffening upon cooling (C ₄₄ and C ₁₄); (ii) monotonic elastic softening (C ₆₆); and (iii) a stiffening-to-softening transition below 150?K (C ₁₁, C ₁₂, C ₁₃ and C ₃₃). In addition, a strong correlation between C ₆₆ and the piezoelectric coefficient e ₁₁ was confirmed. Group theoretical lattice dynamics analysis revealed that the novel phenomena of elastic softening and strong correlation are explained on the basis of two types of optical mode internal displacements which have the totally symmetric A ₁ and doubly degenerated E symmetries in the point group D ₃.     

Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

The photoluminescence （PL） characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.     

Spin-flip Fano–Kondo resonant tunneling through a quantum dot interferometer responded by a rotating magnetic field

The Fano and Kondo cooperated resonant tunneling through a quantum dot interferometer under the perturbation of a rotating magnetic field is investigated theoretically. The spin-polarized current components have been derived generally by employing the Keldysh nonequilibrium Green?s function method, through which the charge and spin currents are determined directly. The numerical calculations on spin and charge currents are performed to show the compound features of mesoscopic transport associated with the Kondo, Fano, and Zeeman effects intimately. The induced spin current in the Kondo regime is much different from the one in the non-interacting regime. The spin current is tuned from resonant peak to valley by varying external parameters.     

Probe of I(Pj) atoms using two-photon resonant four-wave mixing spectroscopy following the 266-nm photodissociations of various alkyl and perfluoroalkyl iodides

Two-photon resonant four-wave mixing spectroscopy has been utilized successfully for probing I and I^∗ nascent from the 266 nm photodissociations of various alkyl and perfluoroalkyl iodides. The relative quantum yields for I^∗, as well as the recoil anisotropy parameters, were extracted. Recoil anisotropy parameters close to the limit value for parallel transition indicates that the ground-state I(²P_3/2) originates from the curve crossing from the initially prepared ³Q₀ to ¹Q₁ state. The curve-crossing probabilities for alkyl and perfluoroalkyl iodides were obtained and tried to explain using the well-known Landau-Zener model. In the cases of perfluoroalkyl iodides, it is necessary to consider the fluorination effect to describe the detailed dynamics observed in this study and has been revealed that the electronic effect due to fluorine atom substitution is dominant, leading to decrease in the curve-crossing probability.     

Transformation of singular light beam transverse structure in resonant media

The peculiarities of transformation of transverse structure for singular light beams propagating in a resonant medium have been analyzed theoretically. The influence of nonlinear absorption, self-focusing, and defocusing on the characteristics of optical vortices with different topological structure has been studied. The formation conditions and parameters for singular spatially localized structures have been characterized. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 4, pp. 509–515, July–August, 2008.     

地基高频加热激励ELF/VLF波对辐射带高能电子的准线性散射

地球内、外辐射带电子通量的变化对于空间飞行器,尤其是中低轨卫星的防护有着非常重要的影响.基于回旋共振波粒相互作用的准线性理论,使用地基高频发射器发射电波调制低电离层背景电流可以人工激励ELF/VLF波,这些波能使辐射带相对论电子发生抛射角散射沉降进入大气层从而降低其生存期.为了定量地分析人工激励ELF/VLF波散射辐射带高能粒子的可行性,针对内、外辐射带,本文选取了两个典型区域：L=4.6和L=1.5.数值计算结果表明,在内、外辐射带由于ELF/VLF波的人工注入而造成的高能电子损失时间尺度很大程度上取决于冷等离子体参量α^*(∝B²/N₀,这里B是背景磁场,N₀是电子数密度)、电波频谱特性和功率,以及与波发生回旋共振的电子能量.一般来讲,在外辐射带人工ELF/VLF哨声波散射相对论电子使之沉降到大气层要容易得多;低能量的高能电子(200keV)要比高能量的相对论电子(500keV)更有效地通过抛射角散射进入大气层.考虑到高频电波加热电离层激励的ELF/VLF波可能会被捕获在磁层空腔中,来回反射从而得到增强,因此在适当的条件下,地基高频加热装置发射足够的电波功率进入电离层诱导大幅度ELF/VLF波注入到内磁层,能够在1至3天的时间尺度内快速散射外辐射带相对论电子使之沉降,也能够在10天量级的时间尺度里散射生存周期一般为100天甚至更长的内辐射带相对论电子. 关键词： 地基高频加热电离层 ELF/VLF波激励 高能电子散射和沉降 共振波粒相互作用