旋涂法制备WO3薄膜电致变色性能

"智能窗"大规模推广顺应可持续发展潮流,三氧化钨(WO_3)是生产"智能窗"的一种重要电致变色材料,但调控WO_3薄膜电致变色性能机制仍待进一步研究。采用旋涂法制备WO_3薄膜,重点研究了溶液浓度和旋涂次数对调控WO_3薄膜电致变色性能的影响。通过表面轮廓仪测量薄膜厚度,X射线衍射(XRD)测量薄膜结晶情况,原子力显微镜(AFM)和扫描电子显微镜(SEM)分析薄膜表面形貌,光谱仪测量薄膜初始态、着色态和褪色态的透射率。实验结果表明,随着溶液浓度增加(0. 2～1. 0 mol/L),薄膜厚度从9. 7 nm增加到33. 3 nm,透射率调制能力从0%提升到37. 0%;多次旋涂薄膜厚度线性增长,线性拟合优度(R~2)达0. 98,5次旋涂后透射率调制能力达51. 3%。改变溶液浓度和旋涂次数都是调控薄膜透射率调制能力的有效手段,精准调控薄膜透射率调制能力对设计不同应用场景的电致变色器件具有重大意义。     

Three-dimensional interfacial fracture analysis of a one-dimensional hexagonal quasicrystal coating

In this paper, the three-dimensional (3D) interfacial fracture is analyzed in a one-dimensional (1D) hexagonal quasicrystal (QC) coating structure under mechanical loading. A planar interface crack with arbitrary shape is studied by a displacement discontinuity method. Fundamental solutions of interfacial concentrated displacement discontinuities are obtained by the Hankel transform technique, and the corresponding boundary integral-differential equations are constructed with the superposition principle. Green’s functions of constant interfacial displacement discontinuities within a rectangular element are derived, and a boundary element method is proposed for numerical simulation. The singularity of stresses near the crack front is investigated, and the stress intensity factors (SIFs) as well as energy release rates (ERRs) are determined. Finally, relevant influencing factors on the fracture behavior are discussed.     

Accuracy of high‐order density‐based compressible methods in low Mach vortical flows

At low Mach numbers, Godunov‐type approaches, based on the method of lines, suffer from an accuracy problem. This paper shows the importance of using the low Mach number correction in Godunov‐type methods for simulations involving low Mach numbers by utilising a new, well‐posed, two‐dimensional, two‐mode Kelvin–Helmholtz test case. Four independent codes have been used, enabling the examination of several numerical schemes. The second‐order and fifth‐order accurate Godunov‐type methods show that the vortex‐pairing process can be captured on a low resolution with the low Mach number correction applied down to 0.002. The results are compared without the low Mach number correction and also three other methods, a Lagrange‐remap method, a fifth‐order accurate in space and time finite difference type method based on the wave propagation algorithm, and fifth‐order spatial and third‐order temporal accurate finite volume Monotone Upwind Scheme for Conservation Laws (MUSCL) approach based on the Godunov method and Simple Low Dissipation Advection Upstream Splitting Method (SLAU) numerical flux with low Mach capture property. The ability of the compressible flow solver of the commercial software, ANSYS FLUENT , in solving low Mach flows is also demonstrated for the two time‐stepping methods provided in the compressible flow solver, implicit and explicit. Results demonstrate clearly that a low Mach correction is required for all algorithms except the Lagrange‐remap approach, where dissipation is independent of Mach number. © 2013 Crown copyright. International Journal for Numerical Methods in Fluids. © 2013 John Wiley & Sons, Ltd.     

The hyperconjugation effect on the graphene counterparts based on silicon and germanium

Bending of the A = A (A of the group IVA) double bond neighboring is rationalized by the hyperconjugation phenomenon analysis. The bending is also observed for the high sized linear, cyclic or graphene-like compounds that imply the conjugated double bonds. The electronic delocalization takes place between occupied σ(π) and unoccupied π*(σ*) orbitals especially for compound implying Si and Ge atoms. Leading to rippled structure, this phenomenon affects the silicene and germane thickness sheets and probably would have some consequences on the properties of such compounds when they will be involved in the industries in the future. However we introduce a new parameter to assess the thickness of graphenic structures when the hyperconjugation takes place in the bonding framework. The study has been undertaken at high levels of theory like B3LYP/6-311 + G(3df,2p).     

Effect of thickness of CdTe/Ge heterojunction photodetectors on optoelectronic properties

The influence of the thickness of CdTe/n-Ge heterojunction photodetectors on I–V curves was studied experimentally and theoretically. The thicknesses of the CdTe thin films were 110, 130, 150, and 200 nm. The power intensity of illumination was 150 mW/cm². Increasing the thickness led to an increase in photocurrent.     

Novel zigzag-shaped compounds exhibiting apolar columnar mesophases with oblique and rectangular lattices

The design, synthesis and characterisation of some compounds whose constituent molecules have a completely new shape have been carried out. A total of eight different series/part of series of these zigzag-shaped compounds that are either symmetrical or unsymmetrical were synthesised. Only two mesophases were observed, and on the basis of polarising optical microscopy, differential scanning calorimetry, X-ray diffraction and electro-optical studies, these have been characterised as columnar phases with a rectangular or an oblique lattice. Perhaps, these represent the first examples of a rigid zigzag-shaped compound exhibiting a mesophase.     

Long‐time behavior of a nonlinear viscoelastic beam equation with past history

This paper is concerned with the existence of a global attractor for the nonlinear viscoelastic beam equation with past history memory where g(u_t) is a damping like | u_t | ^ru_t and f(u) is a source term like | u | ^αu ? | u | ^βu, by considering 0 ≤ β < α and r > 0. Copyright © 2014 John Wiley & Sons, Ltd.     

Raman micro‐spectroscopy for quantitative thickness measurement of nanometer thin polymer films

The sensitivity of far‐field Raman micro‐spectroscopy was investigated to determine quantitatively the actual thickness of organic thin films. It is shown that the thickness of organic films can be quantitatively determined down to 3 nm with an error margin of 20% and down to 1.5 nm with an error margin of 100%. Raman imaging of thin‐film surfaces with a far‐field optical microscope establishes the distribution of a polymer with a lateral resolution of ~400 nm and the homogeneity of the film. Raman images are presented for spin‐coated thin films of polysulfone (PSU) with average thicknesses between 3 and 50 nm. In films with an average thickness of 43 nm, the variation in thickness was around 5% for PSU. In films with an average thickness of 3 nm for PSU, the detected thickness variation was 100%. Raman imaging was performed in minutes for a surface area of 900 µm². The results illustrate the ability of far‐field Raman microscopy as a sensitive method to quantitatively determine the thickness of thin films down to the nanometer range. Copyright © 2015 John Wiley & Sons, Ltd.     

Review on the thickness measurement of ultrathin oxide films by mutual calibration method

Mutual calibration was suggested as a method to determine the absolute thickness of ultrathin oxide films. It was motivated from the large offset values in the reported thicknesses in the Consultative Committee for Amount of Substance (CCQM) pilot study P-38 for the thickness measurement of SiO₂ films on Si(100) and Si(111) substrates in 2004. Large offset values from 0.5 to 1.0 nm were reported in the thicknesses by ellipsometry, X-ray reflectometry (XRR), medium-energy ion scattering spectrometry (MEIS), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), and transmission electron microscopy (TEM). However, the offset value for the thicknesses by X-ray photoelectron spectroscopy (XPS) was close to zero (−0.013 nm). From these results, the mutual calibration method was reported for the thickness measurement of SiO₂ films on Si(100) by combination of TEM and XPS. The mutual calibration method has been applied for the thickness measurements of hetero oxide films such as Al₂O₃ and HfO₂. Recently, the effect of surface contamination was reported to be critical to the thickness measurement of HfO₂ films by XPS. On the other hand, MEIS was proved to be a powerful zero offset method which is not affected by the surface contamination. As a result, the reference thicknesses in the CCQM pilot study P-190 for the thickness measurement of HfO₂ films on Si(100) substrate were determined by mutual calibration method from the average XRR data and MEIS analysis. Conclusively, the thicknesses of ultrathin oxide films can be traceably certified by mutual calibration method and most thickness measurement methods can be calibrated from the certified thicknesses.     

Thermal radiation impact on magneto-hydrodynamic heat transfer micropolar fluid flow over a vertical moving porous plate: A finite difference approach

For this research, an examination on the magnetohydrodynamic flow of a micropolar fluid across a moving vertical porous plate for the presence of thermal radiation is achieved. It is necessary to translate the partial differential equations regulating the flow, heat, & mass transfer into dimensionless form employing proper non-dimensional variables, which are then cracked numerically by utilizing the Finite difference approach. Graphs are used to represent numerical values of various flow profiles; however, tables are used to represent the simulated values of rate coefficients. The velocity rises when the value of Grashof number, dimensionless viscosity ratio is raised, and the opposite effect is seen when the value of magnetic parameter, micro-gyration factor is raised. The result in skin friction coefficient improves when the values of magnetic parameter, micro-gyration factor, Prandtl number, and radiation are raised higher.