中国筝的声功率级测试

筝是中国古老的弹弦乐器。但迄今为止,对其声功率级一直未进行科学的测定。本文在一混响室内根据ISO及GB标准,对二十一弦筝的声功率级进行了首次测定。两位资深乐师在混响室内分别演奏各自的乐器,通过围绕乐师和乐器布置的四通道测试设备,对筝所辐射的声功率级和动态范围进行测定。测试结果表明,中国筝在以不同力度演奏单音、音阶和乐曲时所辐射的声功率级及其频率特性均有所不同。考虑到乐器演奏音阶时所辐射的声功率级及其动态范围与演奏乐曲时的声功率级接近,并且,音乐的空间感也大都在乐器以f力度演奏乐曲的强音标志乐段时最为显著,故此我们建议中国筝所辐射的声功率级用其以f力度演奏音阶时的平均声功率级表示。本文测试的两架中国筝以f力度演奏音阶时的平均声功率级为85.9dB。文中不仅首次公布了中国筝声功率级的测试结果,并且所介绍的测试方法对其它乐器声功率级测试也具有借鉴意义。民族乐器所辐射的声音性能的确定是民族音乐厅堂音质研究的基础。     

分布损耗对回旋行波放大器稳定性的影响

基于电磁模式的色散方程和回旋管非线性理论,研究了损耗层厚度对回旋行波放大器注-波互作用的影响.结果表明,合理选择损耗层电导率和厚度能够让期待的工作模式TE₀₁衰减较小,而对应的竞争模式TE₂₁因损耗很大而更难以起振,随厚度的增加,放大带宽从两边向中间收缩变窄,频带中间部分的输出功率会上升,曲线更加平坦,从而达到改善互作用稳定性的目的. 关键词： 回旋行波放大器 起振长度 起振频率 饱和功率     

幂函数叠加势的径向薛定谔方程的解析解

研究多种正幂势函数与逆幂势函数紧密耦合条件下薛定谔径向方程解析解的求解方法.对势函数为V（r）=α₁r⁸＋α₂r³+α₃r²+β₃r^-1＋β₂r^-3＋β₁r^-4的径向薛定谔方程存在解析解的条件以及精确的解析解进行了研究. 根据量子系统波函数必须满足单值、有界和连续的标准条件,首先求出径向坐标r→∞以及r→0时的渐近解,然后采用非正则奇点邻域附近的波函数级数解法与求得的渐近解相结合,通过幂级数系数比较法得到径向薛定谔方程在势函数系数紧密耦合条件下的一系列定态波函数解析解以及相应的能级结构,并作适当讨论与结论. 关键词： 级数解法 幂势函数 径向波函数 渐近解     

The feature study on the <Emphasis Type="Italic">π</Emphasis> and proton rapidity distributions at AGS,SPS and RHIC

The features of nuclear stopping power and multi-hadron production systematically are studied by making an analysis of rapidity distributions of pion and proton at AGS, SPS and RHIC in this work. It is found that nuclear stopping power increases linearly with project rapidity y _p at AGS and SPS, but that is not liner at RHIC. It is argued that the average rapidity loss is saturated at central rapidity region at RHIC. For pion distribution, it is found that the phase space of pion distribution distributes uniformly in the longitudinal direction, and a linear relationship of 〈βγ〉_L with log√s is given at AGS and SPS. Non-uniform flow model may explain the features of the distribution at AGS and SPS, but may not explain those of at RHIC. Supported by the Excellent Youth Foundation of Hubei Scientific Committee (Grant No. 2006ABB036), the Educational Commission of Hubei Province of China (Grant No. Z20081302), and the Natural Science Foundation of China Three Gorges University (Grant No. 2003C02)     

Observation of electron weak localization and correlation effects in disordered graphene

We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga⁺ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample. Supported by the National Natural Science Foundation of China (Grant Nos. 10774172 and 10874220), and the National Basic Research Program of China from the MOST (Grant No. 2006CB921304)     

对M2参数极值问题的一些讨论

在采用86．5％功率通量法定义光束束宽和远场发散角的前提下,对由此定义的M2参数M^2PC的最小可能取值及具有最小M^2PC参数的光束特性等问题进行了讨论。结果表明：共焦腔的自再现模应具有最小的M2参数M^2PC;当采用86．5％功率通量法定义光束束宽和远场发散角时,在近轴近似条件下,由具有同一中心的两基模高斯光束轴向叠加所形成的自再现光束,M^2PC大于等于1。     

Optical and mechanical properties of AlF3 films produced by pulse magnetron sputtering of Al targets with CF4/O2 gas

In this study, AlF₃ thin films were deposited by pulse magnetron sputtering of Al targets with different ratios of CF₄/O₂ gas and at different sputtering powers. The optical and mechanical properties of the AlF₃ thin films were analyzed. The transmittance spectra showed no obvious negative inhomogeneous refractive indices. Denser films with a low optical absorption were obtained when high sputtering powers were used (larger than 30 W). The lowest extinction coefficient (7.3 × 10⁻⁴ at 193 nm) of the films can be reached with 12 sccm O₂ flow rate and at 160W sputtering power. All of the residual stresses were compressive and their trends were consistent with the refractive indices. The lowest compressive stress (0.068 GPa) was obtained when the AlF₃ films were prepared at 160W sputtering power.     

介质表面高功率微波击穿的数值模拟

研究了用于模拟高功率微波条件下介质表面击穿的静电PIC-MCC模型,并通过自行编写的数值模拟程序模拟了真空及不同气压条件下介质表面击穿过程中的次级电子倍增和气体电离等过程.模拟结果发现,在真空及低气压条件下,电子的主要来源是次级电子倍增,电子数量以两倍于入射场的频率振荡;在高气压情况下,电子的主要来源是气体电离. 关键词： 介质表面击穿 高功率微波 数值模拟 次级电子倍增     

一种新型电力网络局域世界演化模型

现实世界中的许多系统都可以用复杂网络来描述,电力系统是人类创造的最为复杂的网络系统之一.当前经典的网络模型与实际电力网络存在较大差异.从电力网络本身的演化机理入手,提出并研究了一种可以模拟电力网络演化规律的新型局域世界网络演化模型.理论分析表明该模型的度分布具有幂尾特性,且幂律指数在3—∞之间可调.最后通过对中国北方电网和美国西部电网的仿真以及和无标度网络、随机网络的对比,验证了该模型可以很好地反映电力网络的演化规律,并且进一步证实了电力网络既不是无标度网络,也不是完全的随机网络. 关键词： 电力网络 演化模型 局域世界 幂律分布     

瓦级大功率InGaN蓝光LED的光色电特性

封装并测量了瓦级大功率InGaN蓝色发光二极管(LED)在不同正向电流I_F驱动下的光通量、电功率、发光效率、发射光谱和色品坐标等参数的变化。研究表明, 光通量与电功率随I_F的增大呈亚线性增加,而发光效率η则下降。当I_F从50 mA一直增大到450 mA左右时,发射光谱的峰值波长λ_p随I_F的增加发生蓝移,蓝移现象可能与InGaN蓝光LED芯片在较大电流时能带被拉平以及In成分的作用有关。当I_F大于500 mA或800 mA后,λ_p又发生红移,红移现象可能与大电流注入下InGaN蓝光LED芯片产生的热效应以及电子-空穴对辐射复合有关。此外,光谱的半峰全宽(FWHM)产生宽化现象,色坐标x和y值也发生变化。