Growth and annealing of zinc-blende CdSe thin films on GaAs (0 0 1) by molecular beam epitaxy

CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 °C shows a polycrystalline structure with rough surface. As the temperature increases over 300 °C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 °C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 °C were annealed in air for 30 min to study the films’ thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 °C, meaning a good thermal stability of the cubic CdSe epilayers.     

流道缩扩比对1+1/2对转涡轮高压动叶性能影响的研究

本文以1+1/2对转涡轮为背景,采用理论分析与数值模拟相结合的方法对某1+1/2对转涡轮高压动叶进行了优化设计.研究结果表明,流道缩扩比对高出口马赫数涡轮叶栅性能有重要影响,合理的流道缩扩比能减弱甚至消除尾缘内伸波,从而提升叶栅的性能.文中综合考虑了叶栅流道周向以及径向两个方向的扩张因素后选择了叶栅流道缩扩比,进行1+...     

高温及超高温热管的启动特性和传热极限

根据局部高温、高热流加热等特殊场合的需求,设计、加工了钠高温热管及锂超高温热管,并对热管的启动和极限特性进行了研究。高温及超高温热管能够顺利启动,但启动时应注意可能到来的声速传热极限。端部加热启动时,端部附近管体部分会形成一段等效的加热段,可以将工质从启动时的固体状态到全部熔化形成相变传热及流动循环的时间确定为启动时间。热管的传热极限特性表明,超高温热管应工作在更高的温度和更大的热流密度。热管的结构和工艺优化有利于启动和运行。     

基于磁光调制偏振光的空间方位失调角高精度测量新方法

调制偏振光可以作为方位信息的载体,实现方位角度信息的传递,在军事、航天和生物医药等领域有广泛的应用前景.阐述了基于磁光调制偏振光的方位失调角测量原理,分析了现有测量原理中的误差来源.为了从理论方法上提高测量精度,提出了直接计算的方法,将磁光调制后的光强信号直接进行取极值点处理,建立了失调角与极值点之间的方程,详细分析了...     

Photoemission intensity oscillations in the valence bands of C70 film

We have measured and analyzed the photoemission spectra (PES) of a C₇₀ film in the photon energy region from 13.4 eV to 98.4 eV. The photoelectron intensities of two C 2p π-derived features (denoted by A and B) oscillate regularly in the whole energy region with some fine structures below ∼30 eV. To obtain the detailed information of the oscillations, we have developed a sophisticated but practical procedure for intensity calculation. The procedure consists of two core concepts. The first is ascribing the PES features to their corresponding molecular orbitals with the help of density functional calculations. The second is a background subtraction algorithm. With this procedure, we obtained the oscillating behavior for individual features (A and B), which is by and large consistent with the predictions based on the spherical symmetric approximation although C₇₀ has the ellipsoidal shape. Owing to the solid state effect, the oscillating amplitudes of the A/B intensity ratios are smaller than those of gas phase C₇₀, but an orbital shift reported recently was not observed on our sample. The oscillating curve of a deeper feature, which consists of both σ and π states, are also reported.     

高分辨差分比热测量方法及在高温超导体研究中的应用

差分比热实验方法是测量两个样品的比热差,具有高达万分之一的比热测量分辨率,适合测量相变时微小的比热变化及宽温区的电子比热.文章介绍了高分辨连续升温差分比热实验的测量原理和测量方法,并以铜氧化物高温超导体Y0.8Ca0.2Ba2Cu3O6+x为例,介绍了差分比热实验手段在宽温区电子比热的获得、正常态赝能隙及超导凝聚能研究等方面的应用.     

微型光学偶极阱中单原子相干操控Rabi振荡的实现及其应用

文章综述了Rabi振荡的基本原理以及微型光学偶极阱中单原子相干操控Rabi振荡的研究进展,同时介绍了其在单光子源、量子寄存器、量子计算等方面的应用,并简要介绍了作者所在小组在微型光学偶极阱中单原子操控方面的实验进展.     

螺旋线型微秒级高压长脉冲产生器数值模拟

 探索了采用CST软件和PSpice软件进行加速器场分布数值模拟的方法,利用该方法可方便地获取设备内部动态场分布图及动态电压变化规律。针对螺旋线型μs级高压长脉冲产生器系统建立了数值模拟模型,给出了详细的模拟步骤及结果。分析表明,利用场分布模拟方法获取的电压变化规律与电路模拟方法获取的结果是一致的。基于CST模拟方法,可以给出螺旋线及主开关等电气结构的瞬态电场分布,场强增强点主要出现在螺旋带的外沿及金属电极连接处,在介质支撑内部也有较高的场强分布。