大模场啁啾光纤光栅的光谱特性

 将一种矩阵算法拓展应用于数值求解多模耦合模微分方程, 并使用该矩阵算法对大模场啁啾光纤光栅的光谱特性进行了理论研究。结果表明, 大模场多模光纤光栅因模式的自耦合和互耦合而使反射谱存在多个反射峰, 这与单模光纤光栅的反射谱不同。由于光栅周期存在啁啾, 大模场光纤光栅的反射峰分裂, 且峰值反射率减小。使用高斯切趾函数可使反射峰分裂在一定程度上得到改善。     

不同对流马赫数下光束畸变的实验研究

利用双曝光CCD相机成像技术,研究了小直径光束穿越可压缩混合层流场后所引起的气动光学效应.实验研究结果表明:在不同对流马赫数(Mc=0.17,0.45)下,光束投影(点扩散函数,PSF)发生了不同程度的变形和偏移.此外在不同对流马赫数下细光束投影都存在扩束、缩束和面积几乎不变的现象,但光束投影出现扩、缩束的概率不同.     

一种新的自动聚焦算法的研究

聚焦评价函数和极点搜索策略是自动聚焦的重要模块,直接影响聚焦的效果.为同时满足自动聚焦速度和精度上的要求,提出了一种新的自动聚焦算法.该算法综合了快速改进的灰度差分法和高精度小波变换法的优点,根据各阶段聚焦评价函数的梯度选择合适的评价函数和镜头移动步长,并且实现了从大步长快速粗扫到小步长精确细调的过渡.实验表明,与传统...     

Theoretical studies on the structural, electronic, and optical properties of Ag2HgSnSe4

We investigate the electronic structure of Ag₂HgSnSe₄ in a wurtzite-stannite structure with the first principles method. This crystal is a direct band-gap compound. In addition the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory in the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectrum of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and a wide absorption band for this material. The prominent structures in the spectra of reflectivity and the energy-loss function are discussed in detail.     

Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Theoretical study of photon emission from single quantum dot emitter coupled to surface plasmons

Motivated by the recent pioneering advances on nanoscale plasmonics and also nanophotonics technology based on the surface plasmons (SPs), in this work, we give a master equation model in the Lindblad form and investigate the quantum optical properties of single quantum dot (QD) emitter coupled to the SPs of a metallic nanowire. Our main results demonstrate the QD luminescence results of photon emission show three distinctive regimes depending on the distance between QD and metallic nanowire, which elucidates a crossover passing from being metallic dissipative for much smaller emitter-nanowire distances to surface plasmon (SP) emission for larger separations at the vicinity of plasmonic metallic nanowire. Besides, our results also indicate that, for both the resonant case and the detuning case, through measuring QD emitter luminescence spectra and second-order correlation functions, the information about the QD emitter coupling to the SPs of the dissipative metallic nanowire can be extracted. This theoretical study will serve as an introduction to understanding the nanoplasmonic imaging spectroscopy and pave a new way to realize the quantum information devices.     

A new analytical edge spread function fitting model for modulation transfer function measurement

We propose a new analytical edge spread function (ESF) fitting model to measure the modulation transfer function (MTF).The ESF data obtained from a slanted-edge image are fitted to our model through the non-linear least squares (NLLSQ) method.The differentiation of the ESF yields the line spread function (LSF),the Fourier transform of which gives the profile of two-dimensional MTF.Compared with the previous methods,the MTF estimate determined by our method conforms more closely to the reference.A practical application of our MTF measurement in degraded image restoration also validates the accuracy of our model.     

紧束缚势和修正的嵌入原子势计算液态Sn双体相关函数差异

对500个Sn原子分别用两种模型（紧束缚势和修正的嵌入原子势）计算了400℃~1700℃温度范围内纯Sn的双体相关函数g（r）。将计算结果与实验数据进行了对比分析,发现两种计算结果都能基本上反映液态Sn的结构及其随温度的变化情况：原子最近邻距离与实验结果相近;随着温度降低,双体相关函数第一峰变得尖锐,第二峰变得明朗。修正的嵌入原子势模型得到的双体相关函数的第一峰右侧有个突起的肩膀,这在实验结果中也被发现,而紧束缚势模型得到的双体分布函数肩膀不明显。     

C20分子的一个电子输运模型研究

本文构建了Li链为电极的富勒烯C20分子的电子输运模型, 使用非平衡格林函数方法(Non-equilibrium Green's function, NEGF)对构建的Li电极和C20分子构成的分子器件进行了电子输运性质的计算. 计算得出了电子透射谱和电流电压曲线, 分析了产生这个分子器件电子输运性质的原因. 研究计算结果发现,大部分能量的电子是不会穿过器件的, 即使考虑不同偏压,能穿过器件的电子都集中在几个固定的能量上, 且在这几个固定能量上透过率比较高. 计算得出的伏安曲线说明在偏压为1.925V时电流达到最大, 只有在这个偏压周围才有相对明显的电流.