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21.
This paper discusses the associations between traits and haplotypes based on Fl (fluorescent intensity) data sets. We consider a clustering algorithm based on mixtures of t distributions to obtain all possible genotypes of each individual (i.e. "GenoSpec-trum"). We then propose a likelihood-based approach that incorporates the genotyping uncertainty to assessing the associations between traits and haplotypes through a haplotype-based logistic regression model. Simulation studies show that our likelihood-based method can reduce the impact induced by genotyping errors.  相似文献   
22.
利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaNxAs1-x薄膜,并对图谱中所观察的光学跃迁进行了指认.在GaN0.005As0.995和GaN0.01As0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E11N.当N掺杂浓度达到 关键词: 压电调制反射光谱(PzR) xAs1-x薄膜')" href="#">GaNxAs1-x薄膜 分子束外延(MBE)  相似文献   
23.
We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi4 clusters are arranged in the top Cu layer instead of MgBi4. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.  相似文献   
24.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).  相似文献   
25.
26.
A numerical scheme based on an operator splitting method and a dense output event location algorithm is proposed to integrate a diffusion-dissolution/precipitation chemical initial-boundary value problem with jumping nonlinearities. The numerical analysis of the scheme is carried out and it is proved to be of order 2 in time. This global order estimate is illustrated numerically on a test case.

  相似文献   

27.
噁唑啉类化合物是重要的杂环族化合物,在农药化学和医药化学中应用及其广泛。在现有的文献中已报道的大多是3-N乙-酰基-1,3,4噁-唑啉类化合物的合成[1-6],而3-N乙-酰基-1,3,4噁-唑啉类化合物的合成却很少见。为了深入研究同一分子中聚集不同骨架杂环化合物的合成以及开发新型高  相似文献   
28.
猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例   总被引:1,自引:1,他引:0       下载免费PDF全文
Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例.  相似文献   
29.
关于AOR迭代法的研究   总被引:5,自引:0,他引:5  
本文论证了严格对角占优矩阵之AOR法的误差估计式中的误差估计常数hγ,ω(0≤γ≤ω0)的最小值是h1,1.  相似文献   
30.
The optical properties of Ce3+ in CaSO4, SrSO4 and BaSO4 are reported. The Ce3+ ion shows 4f05d12F5/2,2F7/2 luminescence in all three sulphates. Co-doping with Na+ does not change the local surrounding of the Ce3+ ion, but enhances the amount of Ce3+ ions built in. Under optical excitation, besides the typical Ce3+ doublet emission in the ultraviolet spectral region, band emission around 445 nm was observed. This band emission was not assigned to emission from a Ce3+ centre, but to emission from an impurity-trapped exciton. Under X-ray excitation, both Ce3+ emission and an emission band around 380 nm was observed. This band was assigned to emission from a self-trapped exciton.  相似文献   
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