疏松金属材料冲击温度理论分析

以热力学原理和固态物质的三项式物态方程为基础,由密实物质的冲击绝热线和热力学状态,通 过等容线法推导出了疏松金属材料的冲击温度理论计算方法。以铁为例,分析了几种物理参数对该模型计算 结果的影响。计算和分析结果显示,利用新模型得到的计算结果与已有实验结果吻合较好,误差均在5%以 内。疏松金属材料的冲击温度受Grneisen系数、电子Grneisen系数影响不大,而密实度、冲击压力和电子 比热系数则会对疏松金属材料冲击温度产生较大影响。     

Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

We measure surface recombination velocities (SRVs) below 10 cm/s on p‐type crystalline silicon wafers passivated by atomic–layer–deposited (ALD) aluminium oxide (Al₂O₃) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al₂O₃ thickness. For ultrathin Al₂O₃ layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p‐Si and an exceptionally low SRV of 1.8 cm/s on high‐resistivity (200 Ω cm) p‐Si. Ultrathin Al₂O₃ films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma‐enhanced chemical vapour deposition of silicon nitride (SiN_x). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al₂O₃ and SiN_x show that a substantially improved thermal stability during high‐temperature firing at 830 °C is obtained for the Al₂O₃/SiN_x stacks compared to the single‐layer Al₂O₃ passivation. Al₂O₃/SiN_x stacks are hence ideally suited for the implementation into industrial‐type silicon solar cells where the metal contacts are made by screen‐printing and high‐temperature firing of metal pastes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

On the Distribution of Integral Ideals and Hecke Gr¨ossencharacters

The author uses analytic methods to study the distribution of integral ideals and Hecke Grossencharacters in algebraic number fields. Nowak＇s results on the distribution of integral ideals, and Chandrasekharan and Good＇s results on the distribution of Hecke GrSssencharacters are improved.     

Superior dielectric properties and bandgap modulation in hydrothermally grown Gr/MgO nanocomposite

MgO nanoparticles (NPs) and Gr/MgO nanocomposite (NC) have been synthesized by hydrothermal route. X-ray diffraction (XRD) analysis confirmed the crystalline cubic phase of MgO and Gr/MgO NC. Raman spectroscopy was used to study the defects in the NCs. Electron microscopy study display spherical NPs of MgO on graphene sheets. UV-visible spectroscopy shows a red shift in the absorption band and a significant reduction in the bandgap for Gr/MgO NC. The improvements in dielectric properties of NC can be ascribed to interfacial polarization between rGO and MgO. The rGO in the NCs supports the electron transfer and improves the electrical conductivity.     

Minimum Polynomial for Single-Mode Parabose Parasupercharge and Hamiltonian

We calculate the minimum polynomial φ(x,y) of parasupercharge Q and Hamiltonian H for single-mode parabose parasupersymmetry (P-PSUSY). Suppose that φ(x,y) satisfies the homogeneity ∀ λ∈ℝ,φ(λ x,λ ² y)=λ ⁿ φ(x,y), then the parafermionic order p _f is restricted to either 1, 2, or 4. Under the P-PSUSY, the homogeneity of the φ(x,y) is equivalent to the parasuperconformality of Q and H. The physical meaning of the parasuperconformality is discussed, in connection with the spin of the elementary particle.     

Spin damping correction to electrostatic modes in kinetic plasma theory

The effect of spin of particles is studied using a semi-classical kinetic theory for a magnetized plasma. No other quantum effects are included. We focus in the simple damping effects for the electrostatic wave modes. Besides Landau damping, we show that spin produces two new different effects of damping or instability which are proportional to ?. These corrections depend on the electromagnetic part of the wave that is coupled with the spin vector.     

Perturbation expansion for option pricing with stochastic volatility

We fit the volatility fluctuations of the S&P 500 index well by a Chi distribution, and the distribution of log-returns by a corresponding superposition of Gaussian distributions. The Fourier transform of this is, remarkably, of the Tsallis type. An option pricing formula is derived from the same superposition of Black-Scholes expressions. An explicit analytic formula is deduced from a perturbation expansion around a Black-Scholes formula with the mean volatility. The expansion has two parts. The first takes into account the non-Gaussian character of the stock-fluctuations and is organized by powers of the excess kurtosis, the second is contract based, and is organized by the moments of moneyness of the option. With this expansion we show that for the Dow Jones Euro Stoxx 50 option data, a -hedging strategy is close to being optimal.     

Modeling interface trapping effect in organic field-effect transistor under illumination

Organic field-effect transistors (OFETs) have received significant attention recently because of the potential application in low-cost flexible electronics. The physics behind their operation are relatively complex and require careful consideration particularly with respect to the effect of charge trapping at the insulator–semiconductor interface and field effect in a region with a thickness of a few molecular layers. Recent studies have shown that the so-called “onset” voltage (V _onset) in the rubrene OFET can vary significantly depending on past illumination and bias history. It is therefore important to define the role of the interface trap states in more concrete terms and show how they may affect device performance. In this work, we propose an equivalent-circuit model for the OFET to include mechanism(s) linked to trapping. This includes the existence of a light-sensitive “resistor” controlling charge flow into/out of the interface trap states. Based on the proposed equivalent-circuit model, an analytical expression of V _onset is derived showing how it can depend on gate bias and illumination. Using data from the literature, we analyzed the I–V characteristics of a rubrene OFET after pulsed illumination and a tetracene OFET during steady-state illumination.     

Improved piezoelectric properties of cellular polypropylene ferroelectrets by chemical modification

To improve the thermal stability of piezoelectricity of polypropylene (PP) ferroelectrets, chemical modification of the cellular PP film was performed via chromic acid oxidation and then hydrofluoric acid treatment. Deep chemical modification is achieved as indicated by the energy-dispersive X-ray analyses on the cross-section of the modified cellular PP film. The results of the isothermal decay for piezoelectric d ₃₃-coefficient at 70°C indicate the improved thermal stability of piezoelectricity and the enhanced piezoelectric activity of the modified PP ferroelectrets. The former is attributed to the improvement of thermal stability of the charges trapped in the internal void surface layers as indicated by the thermally stimulated discharge measurements, while the latter results not only from the improved thermal stability of the charges but also from the reduction in Young’s modulus of the PP ferroelectrets due to the chemical modification as revealed by the dielectric resonance analyses.     

Organic film thickness influence on the bias stress instability in?sexithiophene field effect transistors

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 to 130 nm on Si/SiO₂ substrates. After the T6 film structural analysis by X-ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties of the organic layer has been highlighted. Conversely, the mobility values as a result are found to be almost thickness independent.