Ka波段8路径向波导空间功率分配(合成)器

通过理论研究以及高频仿真相结合的方法分析设计了一款新型Ka波段8路径向波导空间功率分配(合成)器。研发的新结构输入输出段为标准矩形波导结构,代替了传统功率分配(合成)器输入输出段的同轴结构,这种新型全金属结构更加简单紧凑,更易于加工。仿真结果表明:功率分配(合成)器工作带宽达到了34%(12GHz),基本覆盖整个Ka波段;全频带内反射系数S11低于-20dB,各支路的相位差均小于5°。通过在同轴波导渐变段引入切比雪夫渐变结构,在减小了器件尺寸的同时,在整个频带内的网络S参数也不错。这款新型Ka波段8路径向波导功率分配(合成)器将应用于前级固态功率放大器,推动回旋行波管项目研发。     

紧凑Tesla变压器型纳秒脉冲源

采用带有开路磁芯的Tesla变压器与单筒脉冲形成线一体化结构,研制了一台基于Tesla变压器的紧凑GW级纳秒脉冲源,该源包括一个40Ω脉冲形成线、内置Tesla变压器、初级电路及高压吹气主开关等,具有变比高、结构紧凑、能量传输效率高、便于重复频率运行等特点。给出了脉冲形成线、Tesla变压器和主开关等的工作原理、设计方法和模拟计算。实验结果表明,该脉冲源输出电压大于200kV,脉冲宽度约8ns,可以在重复频率100Hz、平均输出功率1GW情况下稳定运行,实验结果与理论设计相符。     

场分析法与阻抗叠加方法在速调管输出腔间隙阻抗计算中的应用

 从分析速调管输出回路的电磁场分量入手，结合微波电路理论，提出了计算速调管输出回路间隙阻抗的场分析法。对于在谐振模式交叠频带上，群聚电子束电流同时与各模式的阻抗相作用，总阻抗是各模式阻抗的代数叠加的情况，提出了阻抗叠加方法。该方法原则上可求解任意给定间隙电阻所对应的间隙电抗值。计算表明，场分析法与等效间隙阻抗法计算结果最大相对误差为1.5％，阻抗叠加方法计算结果与冷测数据最大相对误差为10％。分析表明，多个谐振模式的引进是速调管输出腔加载滤波器展宽频带的物理实质。     

用三角波序列产生三维多涡卷混沌吸引子的电路实验

提出用三角波序列产生三维多涡卷混沌吸引子的新方法.分析了用三角波序列构造多涡卷 系统的混沌动力学特性，设计了硬件实验电路，进行了相关的电路实验研究.该混沌电路由 积分器N1₁、三角波序列发生器N2₂，N3₃，N4_{4和联动转换开关K共3个部分构成，主要特 点是三角波序列的幅度、宽度、平衡点、转折点、斜率等参数可调，从而能产生大小和形状 可调的多涡卷.此外，通过联动开关K的转换可控制涡卷的数量.硬件电路实验研究结果表明 关键词： 三维多涡卷混沌吸引子 三维多涡卷混沌电路 三角波序列 电路实验}     

Transfer of quantum entangled states between superconducting qubits and microwave field qubits

Transferring entangled states between matter qubits and microwave-field (or optical-field) qubits is of fundamental interest in quantum mechanics and necessary in hybrid quantum information processing and quantum communication. We here propose a way for transferring entangled states between superconducting qubits (matter qubits) and microwave-field qubits. This proposal is realized by a system consisting of multiple superconducting qutrits and microwave cavities. Here, „qutrit” refers to a three-level quantum system with the two lowest levels encoding a qubit while the third level acting as an auxiliary state. In contrast, the microwave-field qubits are encoded with coherent states of microwave cavities. Because the third energy level of each qutrit is not populated during the operation, decoherence from the higher energy levels is greatly suppressed. The entangled states can be deterministically transferred because measurement on the states is not needed. The operation time is independent of the number of superconducting qubits or microwave-field qubits. In addition, the architecture of the circuit system is quite simple because only a coupler qutrit and an auxiliary cavity are required. As an example, our numerical simulations show that high-fidelity transfer of entangled states from two superconducting qubits to two microwave-field qubits is feasible with present circuit QED technology. This proposal is quite general and can be extended to transfer entangled states between other matter qubits (e.g., atoms, quantum dots, and NV centers) and microwave- or optical-field qubits encoded with coherent states.     

Oxide reliability improvement controlling microstructures of substrate/oxide and oxide/gate interfaces

For future ULSIs, the oxide reliability problem is a key issue to realize low-power, high-speed devices whilst retaining its reliability. In the MOSFET structure, a gate oxide consists of the substrate/oxide interface, oxide and oxide/gate interface. Therefore, to improve oxide reliability, it is important to control these three component structures individually. In this report, I will describe experiments to control structures of the above two interfaces using: (1) a combination of a closed wet cleaning system and a load-lock oxidation system and (2) an ultra-thin film deposition CVD technique. By controlling these structures, the oxide reliability was improved. Moreover, the interface structure should be carefully controlled in high- k gate dielectrics in future devices.     

An electrically conducting interface crack with a contact zone in a piezoelectric bimaterial

A plane problem for an electrically conducting interface crack in a piezoelectric bimaterial is studied. The bimaterial is polarized in the direction orthogonal to the crack faces and loaded by remote tension and shear forces and an electrical field parallel to the crack faces. All fields are assumed to be independent of the coordinate co-directed with the crack front. Using special presentations of electromechanical quantities via sectionally-analytic functions, a combined Dirichlet–Riemann and Hilbert boundary value problem is formulated and solved analytically. Explicit analytical expressions for the characteristic mechanical and electrical parameters are derived. Also, a contact zone solution is obtained as a particular case. For the determination of the contact zone length, a simple transcendental equation is derived. Stress and electric field intensity factors and, also, the contact zone length are found for various material combinations and different loadings. A significant influence of the electric field on the contact zone length, stress and electric field intensity factors is observed. Electrically permeable conditions in the crack region are considered as well and matching of different crack models has been performed.     

INVESTIGATION ON FATIGUE HYSTERESIS LOOPS MODELS OF FIBRE-REINFORCED CERAMIC-MATRIX COMPOSITES

纤维增强陶瓷基复合材料初始加载到疲劳峰值应力时, 基体出现裂纹, 纤维/基体界面发生脱粘. 在疲劳载荷作用下, 纤维相对基体在界面脱粘区往复滑移使得陶瓷基复合材料出现疲劳迟滞现象. 建立了纤维陶瓷基复合材料疲劳迟滞回线细观力学模型, 采用断裂力学方法确定了初始加载纤维/基体界面脱粘长度、卸载界面反向滑移长度与重新加载新界面滑移长度, 分析了4种不同界面滑移情况的疲劳迟滞回线. 假设正交铺设与编织陶瓷基复合材料疲劳迟滞回线主要受0°铺层、轴向纱线内纤维/基体界面滑移的影响, 预测了单向、正交铺设与编织陶瓷基复合材料在不同峰值应力与不同循环的疲劳迟滞回线, 与试验结果吻合.     

轴对称几何下耦合MOF界面重构的多介质ALE方法

推导了轴对称几何下的MOF(Moment of Fluid)界面重构,将其与多介质ALE方法相耦合,形成MOFMMALE方法,并应用于多介质大变形流动问题的数值模拟研究。数值算例表明,耦合MOF界面重构的多介质ALE方法是求解多介质大变形流动问题的有效手段,并且具有很好的界面精度和分辨率。     

一种基于运算放大器的高灵敏度惠斯通电桥

关于如何提升惠斯通电桥灵敏度一直是惠斯通电桥研究的热门话题.运算放大器组装成为的差分放大电路在一定范围内可以线性放大输入电压.但是,使用运算放大器提高电桥灵敏度的方法并未被采用.本文采用LM358N型运算放大器来提高电桥两端电势差的测量精度,从而提升惠斯通电桥的灵敏度.我们使用Multisim软件对该方案进行仿真,结果表明如果将放大倍数调至20倍,那么实际误差将小于2%.经过对改进电桥进行实际测量,实验和理论结论符合得很好.采用此方法可以得到一个易操作、低成本、高灵敏度的惠斯通电桥.